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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, ED, LQE 2022-11-25
14:10		 Aichi Winc Aichi (Aichi Industry & Labor Center)
(Primary: On-site, Secondary: Online)		 Growth and device application of InGaN-based nanocolumn crystals using various crystal planes
Jumpei Yamada, Ai Mizuno, Rie Togashi, Ichirou Nomura, Katsumi Kishino (Sophia Univ.) ED2022-46 CPM2022-71 LQE2022-79		 In this study, we investigated the growth of InGaN-based nanocolumns with various crystal orientations and the fabricati... [more] ED2022-46 CPM2022-71 LQE2022-79
pp.99-102
LQE, ED, CPM 2014-11-28
16:25		 Osaka   Fabrication of single crystalline p-i-n nanocolumns array on a sputter-deposited thin film
Tomohiro Noma, Hiroaki Hayashi, Daishi Fukushima, Yuta Konno, Ichiro Nomura, Katsumi Kishino (Sophia Univ.) ED2014-97 CPM2014-154 LQE2014-125		 Nitride has an attractive feature of bandgap engineering from ultraviolet to infrared. However, a lot of defects in nitr... [more] ED2014-97 CPM2014-154 LQE2014-125
pp.117-120
LQE, ED, CPM 2011-11-18
15:05		 Kyoto Katsura Hall，Kyoto Univ. Fabrication and characterization of near-infrared (1.46 um) GaN-based nanocolumn LEDs with In-rich InGaN active layer
Jumpei Kamimura, Katsumi Kishino, Kouichi Kamiyama, Akihiko Kikuchi (Sophia Univ.) ED2011-98 CPM2011-147 LQE2011-121		 We demonstrated the longest wavelength operation of InGaN-based LEDs emitting at 1.46 um under DC current injection at t... [more] ED2011-98 CPM2011-147 LQE2011-121
pp.127-130
ED, LQE, CPM 2009-11-19
10:50		 Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) High quality InN crystal growh by RF-MBE -- Growth of position-controlled InN nanocolumns --
Tsutomu Araki, Tomohiro Yamaguchi, Masamitsu Kaneko (Ritsumeikan Univ.), Yasushi Nanishi (Ritsumeikan Univ./Seoul National Univ.) ED2009-132 CPM2009-106 LQE2009-111		 Position controlled InN nanocolumns were successfully grown by ECR-MBE and RF-MBE on hole-patterned GaN template fabrica... [more] ED2009-132 CPM2009-106 LQE2009-111
pp.19-24
LQE, ED, CPM 2008-11-27
09:30		 Aichi Nagoya Institute of Technology Fabrication of regularly arranged InGaN/GaN nanocolumns by Ti mask selective area growth throughout rf-plasma-assisted molecular-beam epitaxy
Hiroto Sekiguchi, Akihiko Kikuchi, Katsumi Kishino (Sophia Univ.) ED2008-152 CPM2008-101 LQE2008-96		 GaN nanocolumns have high optical properties due to dislocation-free nature. We report the fabrication of regularly arra... [more] ED2008-152 CPM2008-101 LQE2008-96
pp.1-6
LQE, ED, CPM 2008-11-27
09:55		 Aichi Nagoya Institute of Technology Random lasing in GaN nanocolumns
Masaru Sakai, Katsumi Kishino, Akihiko Kikuchi, Hiroto Sekiguchi, Yuta Inose, Kazuhiro Ema, Tomi Ohtsuki (Sophia Univ.) ED2008-153 CPM2008-102 LQE2008-97		 Self-organized GaN nanocolumns are one-dimensional columnar nano-crystals, which have about 100 nm in diameter and 1 $\m... [more] ED2008-153 CPM2008-102 LQE2008-97
pp.7-12
CPM, ED, LQE 2007-10-11
13:30		 Fukui Fukui Univ. Micro photoluminescence spectroscopy of single InGaN/GaN nanocolumn
Akio Kaneta (Kyoto Univ./JST), Akinobu Kanai (Kyoto Univ.), Mitsuru Funato, Yoichi Kawakami (Kyoto Univ./JST), Akihiko Kikuchi, Katsumi Kishino (Sophia Univ./JST) ED2007-157 CPM2007-83 LQE2007-58		 The micro photoluminescence (PL) and micro time-resolved PL spectroscopy have been performed on a single InGaN/GaN nanoc... [more] ED2007-157 CPM2007-83 LQE2007-58
pp.7-12
CPM, ED, LQE 2007-10-11
13:55		 Fukui Fukui Univ. Fabrication of GaN/AlGaN nanocolumn LEDs by rf-assisted molecular beam epitaxy
Hiroto Sekiguchi (Sophia Univ./JST), Kei Kato, Jo Tanaka (Sophia Univ.), Akihiko Kikuchi, Katsumi Kishino (Sophia Univ./JST) ED2007-158 CPM2007-84 LQE2007-59		 GaN nanocolumns have excellent optical characteristics due to islocation-free nature. GaN/AlGaN nanocolumn LEDs grown on... [more] ED2007-158 CPM2007-84 LQE2007-59
pp.13-17
LQE, OPE 2007-06-29
14:00		 Tokyo Kikai-Shinko-Kaikan Bldg. Intersubband transition in GaN/AlN multiple quantum disk nanocolumns
Kaiichi Tanaka, Keita Ikuno, Yohei Kasai, Kazuya Fukunaga (Sophia Univ.), Hideyuki Kunugita, Kazuhiro Ema, Akihiko Kikuchi, Katsumi Kishino (Sophia Univ/JST-CREST) OPE2007-22 LQE2007-23		 The electronic relaxation process of intersubband transition (ISBT) in semiconductor quantum wells is extremely fast due... [more] OPE2007-22 LQE2007-23
pp.29-33
ED, CPM, LQE 2006-10-06
10:20		 Kyoto   Fabrication of optical communication wavelength photodetector using GaN/AlN multiple quantum disk nanocolumn on Si(111) substrate
Hiroyuki Uchida, Akihiko Kikuchi, Katsumi Kishino (Sophia Univ.) 		Intersubband transition (ISBT) in GaN/AlN multiple quantum structure is an attractive candidate for the mechanism of nex... [more] ED2006-163 CPM2006-100 LQE2006-67
pp.63-67
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