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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 25  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
VLD, DC, RECONF, ICD, IPSJ-SLDM [detail] 2023-11-16
09:30
Kumamoto Civic Auditorium Sears Home Yume Hall
(Primary: On-site, Secondary: Online)
Leakage-current Based Charge Accumulating Aging Sensor Circuit and Evaluation of NBTI Using Fabricated Chips
Mina Fukushima, Songxiang Wang, Kaito Nagai, Kimiyoshi Usami (SIT) VLD2023-43 ICD2023-51 DC2023-50 RECONF2023-46
Operation failure due to BTI (Bias Temperature Instability) is a critical concern. As the pMOS threshold V_th changes o... [more] VLD2023-43 ICD2023-51 DC2023-50 RECONF2023-46
pp.76-81
HWS, VLD 2023-03-01
11:00
Okinawa
(Primary: On-site, Secondary: Online)
Measured Evaluation of BTI Degradation in a 65nm FDSOI Process using Ring Oscillators with Same Circuit Structure
Daisuke Kikuta (KIT), Ryo Kishida (TPU), Kazutoshi Kobayashi (KIT) VLD2022-73 HWS2022-44
(To be available after the conference date) [more] VLD2022-73 HWS2022-44
pp.1-6
VLD, DC, CPSY, RECONF, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC
(Joint) [detail]
2019-11-14
09:15
Ehime Ehime Prefecture Gender Equality Center NBTI Model Replicating AC Stress/Recovery from a Single-shot Long-term DC Measurement
Takumi Hosaka (Saitama Univ.), Shinichi Nishizawa (Fukuoka Univ.), RYO Kishida (Tokyo Univ. of Science), Takashi Matsumoto (The Univ. of Tokyo), Kazutoshi Kobayashi (Kyoto Institute of Tech.) VLD2019-35 DC2019-59
In this paper, simple and compact Negative Bias Temperature Instability (NBTI) model is proposed. The model is based on ... [more] VLD2019-35 DC2019-59
pp.57-62
VLD, DC, CPSY, RECONF, CPM, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC
(Joint) [detail]
2018-12-07
09:50
Hiroshima Satellite Campus Hiroshima A study on estimating the degradation of critical path delay using replica sensors
Kunihiro Oshima, Son Bian, Masayuki Hiromoto, Takashi Sato (Kyoto Univ.) VLD2018-67 DC2018-53
In this paper, we propose a novel method to estimate the aging-induced timing degradation of logic circuits. In the prop... [more] VLD2018-67 DC2018-53
pp.195-200
SDM 2016-01-28
11:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Understanding of BTI for Tunnel FETs
Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda, Yuki Ishikawa, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Yongxun Liu, Shinichi O'uchi, Junichi Tsukada, Hiromi Yamauchi, Takashi Matsukawa, Meishoku Masahara, Kazuhiko Endo (AIST) SDM2015-122
(To be available after the conference date) [more] SDM2015-122
pp.9-12
DC 2014-12-19
13:00
Toyama   Study on reduction and control of NBTI-induced degradation in FPGA-based ring oscillators
Yasuo Sato, Yousuke Miyake, Seiji Kajihara (Kyutech) DC2014-67
Ring oscillators are used for variety of applications to enhance reliability on LSIs or FPGAs; however, the performance ... [more] DC2014-67
pp.1-6
SCE 2014-10-15
14:30
Miyagi Tohoku University, RIEC Fabrication and characterization of waveguide-coupled superconducting nanowire single-photon detectors
Kentaro Waki (Osaka Univ./NICT), Taro Yamashita (NICT), Shin-ichiro Inoue (NICT/JST-PRESTO), Shigehito Miki, Hirotaka Terai (NICT), Rikizo Ikuta, Takashi Yamamoto, Nobuyuki Imoto (Osaka Univ.) SCE2014-37
In recent years, the waveguide-coupled type of superconducting nanowire single-photon detectors (SSPDs), which consists ... [more] SCE2014-37
pp.17-21
DC 2014-06-20
13:40
Tokyo Kikai-Shinko-Kaikan Bldg. A method of LSI degradation estimation using ring oscillators
Tatsunori Ikeda, Yukiya Miura (Tokyo Metropolitan Univ.) DC2014-11
Aging called Negative Bias Temperature Instability (NBTI), Negative Bias Temperature Instability (NBTI) and Chanel Hot C... [more] DC2014-11
pp.7-14
IPSJ-SLDM, CPSY, RECONF, VLD [detail] 2014-01-29
15:40
Kanagawa Hiyoshi Campus, Keio University Methodology for NBTI measurement using an on-chip leakage monitor circuit
Takaaki Sato, Kimiyoshi Usami (Shibaura Inst. of Tech.) VLD2013-131 CPSY2013-102 RECONF2013-85
Miniaturization in recent years ,LSI's aging has become prominent as a factor that prevents the normal operation.By meas... [more] VLD2013-131 CPSY2013-102 RECONF2013-85
pp.173-178
DC 2013-06-21
16:30
Tokyo Kikai-Shinko-Kaikan Bldg. A Method of Transistor Degradation Estimation Using Ring Oscillators
Tatsunori Ikeda, Yukiya Miura (Tokyo Metropolitan Univ.) DC2013-15
Aging called Negative Bias Temperature Instability (NBTI), Negative Bias Temperature Instability (NBTI) and Chanel Hot C... [more] DC2013-15
pp.31-36
SDM, ED
(Workshop)
2012-06-29
12:00
Okinawa Okinawa Seinen-kaikan Reliability Measurement of PFETs under Post Fabrication Self-Improvement Scheme for SRAM
Nurul Ezaila Alias, Anil Kumar, Takuya Saraya (Univ. of Tokyo), Shinji Miyano (STARC), Toshiro Hiramoto (Univ. of Tokyo)
The negative bias temperature instability (NBTI) reliability of PFETs is measured under the post fabrication SRAM self-i... [more]
VLD 2012-03-07
09:15
Oita B-con Plaza A Power Grid Optimization Algorithm Considering by NBTI
Yoriaki Nagata, Masahiro Fukui (Ritsumeikan Univ.), Shuji Tsukiyama (Chuo Univ.) VLD2011-132
With the advent of super deep submicron age and high integration, the circuit was concerned about the impact of timing ... [more] VLD2011-132
pp.73-78
VLD, DC, IPSJ-SLDM, CPSY, RECONF, ICD, CPM
(Joint) [detail]
2011-11-28
10:30
Miyazaki NewWelCity Miyazaki Degradation of Oscillation Frequency of Ring Oscillators Placed on a 90 nm FPGA
Shouhei Ishii, Kazutoshi Kobayashi (KIT) VLD2011-55 DC2011-31
We focuse on issues related to degradation of FPGAs which has become dominant due to scaling and quantitatively estimate... [more] VLD2011-55 DC2011-31
pp.19-24
VLD, DC, IPSJ-SLDM, CPSY, RECONF, ICD, CPM
(Joint) [detail]
2011-11-29
15:05
Miyazaki NewWelCity Miyazaki Multi-core LSI Lifetime Extension by NBTI-Recovery-based Self-healing
Takashi Matsumoto, Hiroaki Makino (Kyoto Univ.), Kazutoshi Kobayashi (Kyoto Inst. Tech.), Hidetoshi Onodera (Kyoto Univ.) CPM2011-160 ICD2011-92
Designing reliable systrems has become more difficult in recent years. Negative-Bias-Temperature-In-stability (NBTI) is ... [more] CPM2011-160 ICD2011-92
pp.59-63
ICD 2010-12-16
15:10
Tokyo RCAST, Univ. of Tokyo [Poster Presentation] A 65nm CMOS High-Speed and High-Fidelity NBTI Recovery Sensor
Takashi Matsumoto, Hiroaki Makino (Kyoto Univ.), Kazutoshi Kobayashi (Kyoto Inst. Tech.), Hidetoshi Onodera (Kyoto Univ.) ICD2010-104
We proposed an NBTI-recovery sensor with 400ns measurement delay. This sensor contains many unit cells. One unit cell in... [more] ICD2010-104
pp.55-58
CAS
(2nd)
2010-10-06
09:45
Chiba Makuhari Messe [Invited Talk] Impact of DFR simulation from device to circuit
Kazuya Matsuzawa, Daisuke Hagishima, Takamitsu Ishihara (Advanced LSI Technology Lab. TOSHIBA)
Long term-reliability must be considered in the value of LSI as well as function and performance. Conventionally, the LS... [more]
ICD
(Workshop)
2010-08-16
- 2010-08-18
Overseas Ho Chi Minh City University of Technology [Invited Talk] Circuit Failure Prediction by Field Test (DART) with Delay-Shift Measurement Mechanism
Yasuo Sato, Seiji Kajihara (Kyusyu Institute of Technology), Michiko Inoue, Tomokazu Yoneda, Satoshi Ohtake, Hideo Fujiwara (NAIST), Yukiya Miura (Tokyo Metropolitan Univ.)
The main task of test had traditionally been screening of hard defects before shipping. However, current chips are takin... [more]
ICD, ITE-IST 2010-07-22
10:45
Osaka Josho Gakuen Osaka Center Buffer-Ring-Based All-Digital On-Chip Monitor for PMOS and NMOS Process Variability Effect
Tetsuya Iizuka, Toru Nakura, Kunihiro Asada (Univ. of Tokyo) ICD2010-24
In this paper, we propose an all-digital process variability monitor which utilizes a simple buffer ring with a pulse co... [more] ICD2010-24
pp.15-20
SCE 2008-07-24
14:15
Tokyo Kikai-Shinko-Kaikan Bldg A novel THz SIS mixer with a NbTiN-groundplane and SIS micro-trylayers directly grown on a quartz substrate
Akira Endo (Univ. of Tokyo, NAOJ, JSPS Research Fellow), Takashi Noguchi, Matthias Kroug, Sergey V. Shitov (NAOJ), Shan Wenlei (PMO), Tomonori Tamura (NAOJ), Takafumi Kojima (Osaka Pref. Univ.), Yoshinori Uzawa, Takeshi Sakai (NAOJ), Hirofumi Inoue (Univ. of TokyoNAOJ), Kotaro Kohno (Univ. of Tokyo) SCE2008-17
A new structure and fabrication process for multi-material THz-SIS mixers is proposed. In this design, both the micromet... [more] SCE2008-17
pp.13-18
ICD, SDM 2008-07-17
09:00
Tokyo Kikai-Shinko-Kaikan Bldg. Impact of the Different Nature of Interface Defect States on the NBTI and 1/f noise of High-k / Metal Gate pMOSFETs between (100) and (110) Crystal Orientations
Motoyuki Sato, Yoshihiro Sugita, Takayuki Aoyama, Yasuo Nara, Yuzuru Ohji (Selete) SDM2008-128 ICD2008-38
Using (110) substarate is one of promissing candidate for pMOSTET boost technology. (110) surface shows not only higher ... [more] SDM2008-128 ICD2008-38
pp.1-6
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