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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 5 of 5  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ED
(Workshop)
2012-06-29
11:00
Okinawa Okinawa Seinen-kaikan Improved current stability in multi-mesa-channel AlGaN/GaN HEMTs
Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.)
We have proposed and characterized a multi-mesa-channel (MMC) AlGaN/GaN HEMT. By forming a periodic trench only under th... [more]
CPM, LQE, ED 2010-11-11
16:25
Osaka   Current control of AlGaN/GaN HEMT with multi-mesa nanochannels
Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) ED2010-152 CPM2010-118 LQE2010-108
We proposed and characterized a multi-mesa-channel (MMC) AlGaN/GaN HEMT. By forming a periodic trench, the MMC HEMT has ... [more] ED2010-152 CPM2010-118 LQE2010-108
pp.47-50
ED, MW 2010-01-14
10:50
Tokyo Kikai-Shinko-Kaikan Bldg AlGaN/GaN HEMT having periodic mesa-gate structure
Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) ED2009-183 MW2009-166
We proposed and characterized a multi-mesa-channel (MMC) AlGaN/GaN HEMT. By forming a periodic mesa, the MMC HEMT has pa... [more] ED2009-183 MW2009-166
pp.49-53
MW, ED 2009-01-16
11:45
Tokyo Kikai-Shinko-Kaikan Bldg Mesa-gate AlGaN/GaN HEMT having nano-width channels
Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) ED2008-223 MW2008-188
The surrounding field effect was effectively observed in a multi-mesa channel (MMC) using an AlGaN/GaN structure, where ... [more] ED2008-223 MW2008-188
pp.141-144
SDM, R, ED 2007-11-16
14:15
Osaka   High Stability of Drain Current at High Temperatures in Multi-Mesa-Channel AlGaN/GaN HEMT
Takahiro Tamura, Junji Kotani, Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) R2007-49 ED2007-182 SDM2007-217
We fabricated a multi-mesa-channel (MMC) structure by forming a periodic trench just under a gate electrode to improve t... [more] R2007-49 ED2007-182 SDM2007-217
pp.19-22
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