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Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 16 of 16  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
RECONF 2018-05-25
10:35
Tokyo GATE CITY OHSAKI Design of an MTJ-Based Multi-Functional Lookup Table Circuit
Daisuke Suzuki, Takahiro Oka, Takahiro Hanyu (Tohoku Univ.)
A multi-functional nonvolatile lookup table (LUT) circuit is described using a magnetic tunnel junction (MTJ) and CMOS h... [more] RECONF2018-12
pp.59-64
VLD 2017-03-01
14:25
Okinawa Okinawa Seinen Kaikan A Nonvolatile Flip-Flop Circuit with a Split Store/Restore Architecture for Power Gating
Masaru Kudo, Kimiyoshi Usami (Shibaura Institute of Tech.)
This paper describes a nonvolatile Flip-Flop (NVFF) circuit to implement Nonvolatile Power Gating. We proposed a new NVF... [more] VLD2016-103
pp.7-12
MRIS, ITE-MMS 2016-07-08
14:15
Tokyo Chuo Univ. Perpendicular magnetic anisotropy induced by oxygen exposure at Co_2FeSi/MgO interfaces
Koki Shinohara, Takahiro Suzuki, Yota Takamura, Shigeki Nakagawa (Tokyo Tech.)
We attempted to add perpendicular magnetic anisotropy (PMA) to half-metallic full-Heusler Co_2FeSi (CFS) alloy thin film... [more] MR2016-16
pp.19-24
SDM 2016-01-28
13:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Van der Waals Junctions of Layered 2D Materials for Functional Devices
Tomoki Machida, Rai Moritani, Yohta Sata, Takehiro Yamaguchi, Miho Arai, Naoto Yabuki, Sei Morikawa, Satoru Masubuchi (Univ. of Tokyo), Keiji Ueno (Saitama Univ.)
Recent advances in transfer techniques of atomic layers have enabled one to fabricate van der Waals junctions of two-dim... [more] SDM2015-123
pp.13-16
MRIS, ITE-MMS 2015-07-10
16:35
Tokyo Waseda Univ. [Invited Talk] Current status and new materials in nonvolatile magnetic memory devices
Seiji Mitani (NIMS)
Materials research on magnetic tunnel junctions for MRAM and logic devices is overviewed, including my group activities.... [more]
ITE-MMS, ITE-CE, MRIS [detail] 2014-01-24
15:45
Osaka Panasonic Shoushin-Kaikan Bldg. The Possibility of Sensor Application of Spin Torque Oscillator
Hiroyuki Tomita, Shinji Miwa, Yoshishige Suzuki (Osaka Univ.)
We discuss the performance of the spin-torque oscillator (STO) as a magnetic field sensor. An MR sensor with magnetic tu... [more] MR2013-38
pp.29-34
MRIS, ITE-MMS 2013-10-25
10:50
Fukuoka Fukuoka-Kotsu-Center Bldg., Hakata Bus Terminal [Invited Talk] Giant tunnel magnetoresistance in perfectly lattice-matched magnetic tunnel junctions -- Current status of spinel MgAl2O4-based tunnel barriers --
Hiroaki Sukegawa, Koichiro Inomata, Seiji Mitani (NIMS)
Tunnel magnetoresistance (TMR) devices with a monocrystalline MgAl2O4 barrier were successfully developed. The lattice m... [more] MR2013-18
pp.35-40
MRIS, ITE-MMS 2012-10-18
17:05
Akita AIT Preparation of nitride capping layers for an improvement of magnetic properties in a CoFeB/MgO-magnetic tunnel junction
Atsushi Sugihara, Soichiro Osaki, Ryoichi Nakatani (Osaka Univ.)
Properties of a CoFeB/MgO-magnetic tunnel junction are possibly improved by suppression of diffusion from a capping laye... [more] MR2012-24
pp.37-42
ITE-MMS, MRIS 2010-03-12
16:20
Aichi Nagoya Univ. Spin filtering through a ferromagnetic La2NiMnO6 tunnel barrier
Toshifumi Katsuragi, Yuya Miyazaki, Yuichi Shiji, Masaaki Tanaka, Ko Mibu (Nagoya Inst. of Tech.), Kouta Kondou (Kyoto Univ.), Shinya Kasai (NIMS), Teruo Ono (Kyoto Univ.)
We investigated magnetic tunnel junctions (MTJs) La0.7Sr0.3MnO3(LSMO)/LaTiO3/La2NiMnO6(LNMO)/Cr/Au which were fabricated... [more] MR2009-65
pp.39-43
ED, SDM 2010-02-22
16:05
Okinawa Okinawaken-Seinen-Kaikan Fabrication of Planar-Type Ferromagnetic Tunnel Junctions Using Field-Emission-Induced Electromigration
Kazutoshi Takiya, Yusuke Tomoda, Takato Watanabe, Watari Kume, Shunsuke Ueno, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech)
We study nanometer-sized spintronic devices with ferromagnetic tunnel junctions. Tunnel magnetoresitance (TMR) observed ... [more] ED2009-203 SDM2009-200
pp.41-45
SDM, ED 2009-06-24
14:30
Overseas Haeundae Grand Hotel, Busan, Korea [Invited Talk] Advanced magnetic tunnel junctions for hybrid spintronics/CMOS circuits
Shoji Ikeda (Tohoku Univ.), Jun Hayakawa (Hitachi, Ltd.), Huadong Gan, Kotaro Mizumuma, Ji Ho Park (Tohoku Univ.), Hiroyuki Yamamoto, Katsuya Miura (Hitachi, Ltd./Tohoku Univ.), Haruhiro Hasegawa, Ryutaro Sasaki, Toshiyasu Meguro (Tohoku Univ.), Kenchi Ito (Hitachi, Ltd.), Fumihiro Matsukura, Hideo Ohno (Tohoku Univ.)
Magnetoresistive random access memory (MRAM) using magnetic tunnel junctions (MTJs) is one of the candidates of universa... [more] ED2009-51 SDM2009-46
pp.5-8
SDM, ED 2009-06-24
15:00
Overseas Haeundae Grand Hotel, Busan, Korea Transient characteristic of fabricated Magnetic Tunnel Junction (MTJ) programmed with CMOS circuit
Masashi Kamiyanagi, Fumitaka Iga, Shoji Ikeda (Tohoku Univ.), Katsuya Miura (Tohoku Univ./Hitachi), Jun Hayakawa (Hitachi), Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh (Tohoku Univ.)
In this paper, it is shown that our fabricated MTJ of 60x180${\rm nm^2}$, which is connected to the MOSFET in series by ... [more] ED2009-52 SDM2009-47
pp.9-12
SDM, ED 2009-06-24
15:15
Overseas Haeundae Grand Hotel, Busan, Korea Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-end Metal Line of CMOS Circuits
Fumitaka Iga, Masashi Kamiyanagi, Shoji Ikeda (Tohoku Univ.), Katsuya Miura (Tohoku Univ./Hitachi), Jun Hayakawa (Hitachi), Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh (Tohoku Univ.)
In this paper, we have succeeded in the fabrication of high performance Magnetic Tunnel Junction (MTJ) which is integrat... [more] ED2009-53 SDM2009-48
pp.13-16
MRIS, ITE-MMS 2008-12-11
16:50
Ehime Ehime University [Invited Talk] Excellent scalability of Magnetic Random Access Memory using spin transfer switching and perpendicular magnetic anisotropy
Masahiko Nakayama, Tadashi Kai, Hisanori Aikawa, Junichi Ozeki, Katsuya Nishiyama, Toshihiko Nagase, Minoru Amano, Sumio Ikegawa, Tatsuya Kishi, Hiroaki Yoda (Toshiba)
Low switching current and Large thermal stability factor is important for achieving a high-density MRAM using spin trans... [more] MR2008-44
pp.37-41
ICD, SDM 2007-08-24
15:15
Hokkaido Kitami Institute of Technology SPRAM (SPin-transfer torque RAM) with a synthetic ferrimagnetic free layer for suppressing read disturbance and write-current dispersion
Katsuya Miura, Takayuki Kawahara, Riichiro Takemura (Hitachi, Ltd.), Jun Hayakawa (Hitachi, Ltd./Tohoku Univ.), Michihiko Yamanouchi (Hitachi, Ltd.), Shoji Ikeda, Ryutaro Sasaki (Tohoku Univ.), Kenchi Ito, Hiromasa Takahashi, Hideyuki Matsuoka (Hitachi, Ltd.), Hideo Ohno (Tohoku Univ.)
SPin-transfer torque RAM (SPRAM) with MgO-barrier-based magnetic tunnel junctions (MTJs) is a promising candidate for a ... [more] SDM2007-166 ICD2007-94
pp.135-138
SDM, ED 2007-02-02
10:10
Hokkaido   Non-volatile ternary content addressable memory using CoFe-based magnetic tunnel junction
Tetsuya Uemura, Takao Marukame, Kenichi Matsuda, Masafumi Yamamoto (Hokkaido Univ.)
An epitaxial Co$_{50}$Fe$_{50}$/MgO/Co$_{50}$Fe$_{50}$ magnetic tunnel junction (MTJ) was fabricated and a relatively hi... [more] ED2006-250 SDM2006-238
pp.57-62
 Results 1 - 16 of 16  /   
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