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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 9 of 9  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, OPE, EMD, R, CPM 2016-08-25
09:45
Hokkaido   Packaging of 16ch (4chx4) Integrated Light Sources with Laser Diode Arrays on Silicon Substrate.
Motoyuki Nishizawa, Nobuaki Hatori, Yu Tanaka, Mitsuru Kurihara, Kazuhiko Kurata (PETRA) R2016-20 EMD2016-24 CPM2016-33 OPE2016-54 LQE2016-29
We are developing packaging technology of hybrid integrated light sources on Silicon platform for realization high capac... [more] R2016-20 EMD2016-24 CPM2016-33 OPE2016-54 LQE2016-29
pp.5-8
ED 2014-12-23
11:10
Miyagi   Modulation barrier AlGaAs/GaAs quantum cascade laser operating at 3.7 THz
Tsung-Tse Lin, Hideki Hirayama (RIKEN) ED2014-111
Recently one more design freedom of change the barriers height in THz QCLs is expected to improve device performance and... [more] ED2014-111
pp.75-78
EMD, LQE, OPE, CPM, R 2014-08-21
15:40
Hokkaido Otaru Economy Center [Invited Lecture] Development of 9xx nm high power laser diode bars
Nobuto Kageyama, Takenori Morita, Kousuke Torii, Takehito Nagakura, Motoki Takauji, Junya Maeda, Harumasa Yoshida (Hamamatsu photonics) R2014-31 EMD2014-36 CPM2014-51 OPE2014-61 LQE2014-35
We report recently developed 9xx nm high power laser diode bars for pumping solid-state lasers, fiber lasers and direct ... [more] R2014-31 EMD2014-36 CPM2014-51 OPE2014-61 LQE2014-35
pp.45-49
ED 2012-12-18
10:05
Miyagi Tohoku University Operation temperature performance improvement by utilizing high Al composition AlGaAs in THz QCLs
Tsung-Tse Lin, Hideki Hirayama (RIKEN) ED2012-103
Terahertz quantum cascade lasers (THz QCLs) are unipolar intersubband transition semiconductor THz source with narrow li... [more] ED2012-103
pp.57-61
SDM, OME 2012-04-27
15:10
Okinawa Okinawa-Ken-Seinen-Kaikan Bldg. [Invited Talk] Growth of Silicon and Silicon-Germanium Thin Films on Glass Substrates by Continuous-Wave Laser Lateral Crystallization
Kuninori Kitahara (Shimane Univ.), Akito Hara (Tohoku Gakuin Univ.) SDM2012-5 OME2012-5
Flow-shaped growth of Si and SiGe thin films on glass substrate was achieved by continuous wave laser lateral crystalliz... [more] SDM2012-5 OME2012-5
pp.21-26
LQE 2011-12-16
16:45
Tokyo Kikai-Shinko-Kaikan Bldg. Multi-Channel and High Density Hybrid Integrated Light Source with a Laser-Diode-Array on a Silicon Waveguide Platform for Inter-Chip Optical Interconnection
Takanori Shimizu, Nobuaki Hatori (PETRA), Makoto Okano (AIST), Masashige Ishizaka, Yutaka Urino, Tsuyoshi Yamamoto (PETRA), Masahiko Mori (AIST), Takahiro Nakamura (PETRA), Yasuhiko Arakawa (Univ. Tokyo) LQE2011-134
A hybrid integrated light source was developed with a novel configuration in which a laser diode (LD) array was mounted ... [more] LQE2011-134
pp.55-60
QIT
(2nd)
2011-11-22
11:00
Osaka Osaka Univ. Engr. Sci. Sigma Hall (Toyonaka) Observation of radial mode phonon hopping towards quantum simulation with trapped ions
Shinsuke Haze, Yusuke Tateishi, Atsushi Noguchi, Kenji Toyoda, Shinji Urabe (Osaka univ.)
Quantum simulation using laser cooled ions are studied and many of related researches are recently reported.
Our goal i... [more]

LQE 2009-05-22
16:10
Toyama Kanazawa Univ. Laser cooling of Yb+ confined in a miniature rf ion trap
Masatoshi Nishizaki, Yuto Muroki, Sho Kawajiri (Grad. Sch. Kyoto Univ.), Kazuhiko Sugiyama (Grad. Sch. Kyoto Univ./JST), Yasutaka Imai, Yugo Onoda (Grad. Sch. Kyoto Univ.), Masao Kitano (Grad. Sch. Kyoto Univ./JST) LQE2009-16
To realize optical frequency standard with trapped ions, it is necessary to confine the ions into the Lamb-Dicke regime.... [more] LQE2009-16
pp.83-86
LQE 2006-06-02
17:35
Fukui University of Fukui Laser cooling of Ba ions in a linear RF ion trap by using diode lasers
Tadayuki Yoshitake, Kazuhiko Sugiyama, Kengo Takeshita, Masao Kitano (Kyoto Univ.)
For realization of a quantum computer, we laser cool Ba$^+$ ions trapped in a linear RF
ion trap by using laser diodes... [more]
LQE2006-17
pp.81-85
 Results 1 - 9 of 9  /   
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