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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| OPE | 2017-12-07 10:50 |
Okinawa | Fabrication of vertical PN junction phase shifter for Si optical modulator based on strip loaded waveguide Yuriko Maegami, Guangwei Cong, Morifumi Ohno, Makoto Okano (AIST), Kazuto Itoh, Nobuhiko Nishiyama, Shigehisa Arai (Tokyo Tech), Koji Yamada (AIST)  OPE2017-92 |
We fabricate a silicon optical phase shifter based on hydrogenated amorphous silicon (a-Si:H) strip-loaded waveguides on... [more] | OPE2017-92 pp.13-18 |
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| WPT | 2016-03-08 09:25 |
Kyoto | Kyoto Univ. Uji Campus | Fundamental Study on Rectenna Behavior as Voltage Doubler Tomohiko Mitani, Shogo Kawashima, Taiga Nishimura (Kyoto Univ.) WPT2015-86 |
We analyzed a 2.45 GHz voltage-doubler-type rectenna, in which Schottky diodes are mounted both in series and in shunt a... [more] | WPT2015-86 pp.55-60 |
| CPM, LQE, ED | 2013-11-28 13:30 |
Osaka | Electrical properties of Si/SiC heterojunctions fabricated using surface-activated bonding Shota Nishida, Jianbo Liang, Masashi Morimoto, Naoteru Shigekawa (Osaka City Univ.), Manabu Arai (New Japan Radio) ED2013-68 CPM2013-127 LQE2013-103 |
The physical and electrical properties of p+-Si/n-4H-SiC heterojunctions with and without being annealed fabricated by u... [more] | ED2013-68 CPM2013-127 LQE2013-103 pp.21-25 |
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| OPE, OME | 2013-11-22 14:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Analysing of Limitting Factors in Organic Photovoltaic Devices Using Impedance Spectroscopy Ying Chai, Ryuhei Murayama, Hirotaka Kojima, Ryosuke Matsubara, Masakazu Nakamura (NAIST) OME2013-71 OPE2013-132 |
For the purpose of effective energy harvesting in room ambient without making human eyes feel dark, wide HOMO-LUMO gap p... [more] | OME2013-71 OPE2013-132 pp.19-23 |
| SCE | 2011-10-12 13:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Capacitance measurements of sub-micron Al junctions using SQUID resonance Kento Kikuchi, Masataka Moriya, Hiroshi Shimada, Yoshinao Mizugaki (UEC Tokyo) SCE2011-13 |
It is necessary to extract the capacitances, resistances and inductances experimentally for fabrication sub-micron Al ju... [more] | SCE2011-13 pp.7-12 |
| SDM, ED | 2011-02-23 16:55 |
Hokkaido | Hokkaido Univ. | Capacitance measurements of sub-micron Al junctions using SQUID resonance Kento Kikuchi, Masataka Moriya, Hiroshi Shimada, Yoshinao Mizugaki (Univ. of Electro-Comm.) ED2010-199 SDM2010-234 |
It is necessary to extract the capacitances, resistances and inductances experimentally for fabrication sub-micron Al ju... [more] | ED2010-199 SDM2010-234 pp.43-48 |
| ED, SDM | 2010-06-30 15:30 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | Fabrication of InP/InGaAs DHBTs with buried SiO2 wires Naoaki Takebe, Takashi Kobayashi, Hiroyuki Suzuki, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.) ED2010-69 SDM2010-70 |
In this paper, we report the fabrication and device characteristics of InP/InGaAs double heterojunction bipolar transist... [more] | ED2010-69 SDM2010-70 pp.75-79 |
| ED, MW | 2010-01-14 10:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Deviation from Proportional Relationship Between Emitter Charging Time and Inverse Current of Heterojunction Bipolar Transistors Operating at High Current Density Masayuki Yamada, Takafumi Uesawa, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.) ED2009-182 MW2009-165 |
We investigated the relationship between the emitter charging time and inverse current of heterojunction bipolar transis... [more] | ED2009-182 MW2009-165 pp.43-48 |
| ED | 2009-06-12 10:20 |
Tokyo | In-situ etching by CBr4 in InP heterojunction bipolar transistors with buried SiO2 wire Naoaki Takebe, Hiroaki Yamashita, Shinnosuke Takahashi, Hisashi Saito, Takashi Kobayashi, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.) ED2009-46 |
In order to obtain high-speed InP heterojunction bipolar transistors (HBTs), it is necessary to reduce the base-collecto... [more] | ED2009-46 pp.51-55 |
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