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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
LQE, OPE, CPM, EMD, R |
2019-08-22 16:45 |
Miyagi |
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[Invited Talk]
3D Flash Memory Cell Reliability Yuichiro Mitani, Harumi Seki, Takanori Asano, Yasushi Nakasaki (Toshiba Memory) R2019-26 EMD2019-24 CPM2019-25 OPE2019-53 LQE2019-31 |
As conventional planar NAND flash memories are limited from physical and electrical scaling point of view, the three-dim... [more] |
R2019-26 EMD2019-24 CPM2019-25 OPE2019-53 LQE2019-31 pp.35-38 |
ED |
2010-06-17 15:15 |
Ishikawa |
JAIST |
Fabrication of high-frequency and high-power AlGaN/GaN HEMTs Yoshimi Yamashita, Issei Watanabe, Akira Endoh, Nobumitsu Hirose, Toshiaki Matsui (NICT), Takashi Mimura (NICT/Fujitsu lab.) ED2010-38 |
High-power AlGaN/GaN high electron mobility transistors (HEMTs) are the most promising devices for future high-speed and... [more] |
ED2010-38 pp.25-30 |
ED, LQE, CPM |
2009-11-20 15:50 |
Tokushima |
Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) |
Output characteristics of AlGaN/GaN HEMTs at 60 GHz frequency band Issei Watanabe, Akira Endoh, Yoshimi Yamashita, Nobumitsu Hirose (NICT), Takashi Mimura (NICT/Fujitsu Labs.), Toshiaki Matsui (NICT) ED2009-159 CPM2009-133 LQE2009-138 |
AlGaN/GaN high electron mobility transistors (HEMTs) are the most promising devices for future high-speed and long-range... [more] |
ED2009-159 CPM2009-133 LQE2009-138 pp.151-155 |
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