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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 8 of 8  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, MWPTHz 2022-12-19
16:05
Miyagi   [Invited Talk] InP-HEMT Fabrication Process Technology for Beyond 5G Wireless Network with Tera-Hertz Band
Takuya Tsutsumi, Hiroshi Hamada, Teruo Jyo, Hiroki Sugiyama, Taro Sasaki, Hiroyuki Takahashi, Fumito Nakajima (NTT) ED2022-76 MWPTHz2022-47
Next-generation "Beyond 5G (B5G) / 6G" wireless network systems have been researched and developed for meeting with rapi... [more] ED2022-76 MWPTHz2022-47
pp.23-27
MWP 2020-05-28
13:30
Online Online [Invited Talk] Fabrication Process of InP-HEMT-based Sub-millimeter Wave ICs for Beyond 5G Application
Takuya Tsutsumi, Hiroki Sugiyama, Hiroshi Hamada, Hideyuki Nosaka, Hideaki Matsuzaki (NTT) MWP2020-1
The 300-GHz sub-millimeter-wave band is one of the candidate frequency for “Beyond 5G” networks to meet rapidly increasi... [more] MWP2020-1
pp.1-6
ED, THz [detail] 2019-12-23
16:20
Miyagi   InP Wafer-level Backside Process for Future Tera-hertz Operation
Takuya Tsutsumi, Hiroshi Hamada, Hiroki Sugiyama, Hideyuki Nosaka, Hideaki Matsuzaki (NTT) ED2019-82
The sub-millimeter-wave band would be utilized in future mobile networks to cope with increasing data rates. InP-based S... [more] ED2019-82
pp.23-28
OPE, LQE 2010-06-25
14:05
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Report on 22nd International Conference on Indium Phosphide and Related Materials (IPRM 2010)
Kazunori Shinoda (Hitachi) OPE2010-14 LQE2010-16
The latest technological achievements and technology trends appeared at the 22nd International Conference on Indium Phos... [more] OPE2010-14 LQE2010-16
p.1
SDM, ED 2009-06-25
11:30
Overseas Haeundae Grand Hotel, Busan, Korea Formation and application of InP porous structures on p-n substrates
Taketomo Sato, Naoki Yoshizawa, Hiroyuki Okazaki, Tamotsu Hashizume (Hokkaido Univ.) ED2009-76 SDM2009-71
We demonstrated to form InP porous structures on n-type epitaxial layers grown on p-type (001) substrates. The high-dens... [more] ED2009-76 SDM2009-71
pp.117-120
OPE, OCS
(Joint)
2009-05-15
13:50
Tokyo Kikai-Shinko-Kaikan Bldg [Special Invited Talk] InP, silica, and silicon photonic integrated circuits for highly spectrally efficient communication systems
Christopher R. Doerr (Alcatel-Lucent) OCS2009-3 OPE2009-9
Increased bandwidth demands require more efficient use of the available optical spectrum in single-mode fibers. Complex... [more] OCS2009-3 OPE2009-9
pp.13-16(OCS), pp.7-10(OPE)
SDM, ED 2008-07-11
15:50
Hokkaido Kaderu2・7 Electrochemical Formation and Functionalization of InP Porous Nanostructures and Their Application to Chemical Sensors
Akinori Mizohata, Naoki Yoshizawa, Taketomo Sato, Tamotsu Hashizume (Hokkaido Univ.) ED2008-102 SDM2008-121
We investigated the electrocatalytic activity of n-type InP porous nanostructures and the feasibility of their functiona... [more] ED2008-102 SDM2008-121
pp.327-330
ED, SDM 2007-06-25
15:05
Overseas Commodore Hotel Gyeongju Chosun, Gyeongju, Korea Electrochemical formation and sensor application of InP porous nanostructures
Taketomo Sato, Toshiyuki Fujino, Tamotsu Hashizume (Hokkaido Univ.)
A two-step electrochemical process was developed to form high-density array of InP porous nanostructures. By the subsequ... [more]
 Results 1 - 8 of 8  /   
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