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 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2010-12-17
09:30		 Miyagi Tohoku University (Research Institute of Electrical Communication) [Invited Talk] Millimeter-wave Impulse Radio system using InP-based HEMT MMIC
Naoki Hara, Yasuhiro Nakasha, Kozo Makiyama, Tsuyoshi Takahashi (Fujitsu/Fujitsu Labs.) ED2010-165		 Both transmitter and receiver modules based on simple impulse radio (IR) based architecture using InP-based HEMTs that w... [more] ED2010-165
pp.41-45
ED 2009-11-29
15:30		 Osaka Osaka Science & Technology Center Effect of Gate-Recess Structure on Electron Transport in Nanogate InP-HEMTs Studied by Monte Carlo Simulations
Akira Endoh, Issei Watanabe (NICT), Takashi Mimura (NICT/Fujitsu Labs.), Toshiaki Matsui (NICT) ED2009-163		 To achieve millimeter-wave and THz-wave operations of InP-based HEMTs, gate length Lg must be reduced. In addition, gate... [more] ED2009-163
pp.19-23
MW, ED 2009-01-15
14:50		 Tokyo Kikai-Shinko-Kaikan Bldg High-frequency and low-noise performances of InP-based HEMTs for millimeter-wave monolithic integrated circuits
Issei Watanabe, Akira Endoh (National Inst. of Info.&Com. Tech.), Takashi Mimura (National Inst. of Info.&Com. Tech/Fujitsu Lab. Limited,), Toshiaki Matsui (National Inst. of Info.&Com. Tech.) ED2008-214 MW2008-179		 InP-based high electron mobility transistors (HEMTs) are the most promising devices not only for future high-speed and h... [more] ED2008-214 MW2008-179
pp.95-99
ED 2008-06-14
09:00		 Ishikawa Kanazawa University InP HEMT device technology for ultra-high-speed MMIC
Naoki Hara, Tsuyoshi Takahashi, Kozo Makiyama (Fujitsu), Toshihiro Ohki (Fujitsu Lab) ED2008-32		 We have developed InP-based HEMT technology suitable for fabricating ultra-high-speed MMIC. Scaling of both vertical and... [more] ED2008-32
pp.55-60
ED 2007-11-27
13:55		 Miyagi Tohoku Univ. Research Institute of Electrical Communication Fabrication of ultrafast InP-based HEMTs for MMIC application
Issei Watanabe, Akira Endoh (NICT), Takashi Mimura (Fujitsu Labs.), Toshiaki Matsui (NICT) ED2007-188		 InP-based high electron mobility transistors (HEMTs) are the most promising devices not only for future high-speed and h... [more] ED2007-188
pp.7-10
MW, ED 2005-01-18
14:25		 Tokyo   -
-, -, -, - (OKI) 		The device performances of double-recessed 0.1-µm-gate pseudomorphic InP-based high electron mobility transistors ... [more] ED2004-221 MW2004-228
pp.53-58
 Results 1 - 6 of 6  /   
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