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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 62  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, THz 2017-12-19
09:40
Miyagi RIEC, Tohoku Univ Cryogenic DC and RF Characteristics of InGaAs/InAs/InGaAs Composite Channel HEMTs
Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (NICT/Fujitsu Labs.) ED2017-82
We fabricated In0.7Ga0.3As/InAs/In0.7Ga0.3As and In0.7Ga0.3As channel HEMTs and measured their DC and RF characteristics... [more] ED2017-82
pp.37-40
MW, ED 2017-01-27
09:55
Tokyo Kikai-Shinko-Kaikan Bldg. Dependence of Electron Mobility on Deposition Temperature and H2 Annealing in MOSFETs with HfO2/Al2O3/InGaAs Gate Stacks
Kazuto Ohsawa, Shinji Noguchi, Seiko Netsu, Nobukazu Kise, Yasuyuki Miyamoto (Tokyo Tech) ED2016-103 MW2016-179
III–V compound semiconductors are promising materials for future n-type MOSFET channels because of their high elec... [more] ED2016-103 MW2016-179
pp.35-40
ED 2016-12-19
14:00
Miyagi RIEC, Tohoku Univ [Invited Talk] Evaluation of transistor performance in single and double δ-doping in InP-based high-electron-mobility transistors with MOVPE-grown InAs/In0.8Ga0.2As quantum-well
Amine El Moutaouakil, Hiroki Sugiyama, Hideaki Matsuzaki (NTT) ED2016-80
InP-based high-electron-mobility transistors (HEMTs) with InAs quantum-well have exhibited record high-speed performance... [more] ED2016-80
pp.1-5
ED 2016-12-19
14:40
Miyagi RIEC, Tohoku Univ Effect of Drain-Side Recess Length on DC and RF Characteristics of Cryogenic InP HEMTs
Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT) ED2016-81
We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs with various drain... [more] ED2016-81
pp.7-12
ED 2015-12-21
13:45
Miyagi RIEC, Tohoku Univ Effect of Temperature on DC and RF Characteristics of Cryogenic InP HEMTs
Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT) ED2015-92
We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs at 300, 220, 150, ... [more] ED2015-92
pp.7-11
CPM, OPE, LQE, R, EMD 2015-08-27
14:15
Aomori Aomori-Bussankan-Asupamu [Invited Talk] Heterogeneous Integration Technology Using Fluidic Self Assembly Based on Ga Molten Bumps
Koichi Maezawa, Jun Nakano, Tomoaki Shibata, Hiroki Morita, Hiroshi Sakamoto, Satoshi Yamada, Masayuki Mori (Univ. Toyama) R2015-28 EMD2015-36 CPM2015-52 OPE2015-67 LQE2015-36
Fluidic Self Assembly (FSA) is a most promising heterogeneous integration technique leading to new applications of semic... [more] R2015-28 EMD2015-36 CPM2015-52 OPE2015-67 LQE2015-36
pp.27-32
ED 2015-07-25
10:40
Ishikawa IT Business Plaza Musashi 5F Fabrication of InGaAs channel multi-gate MOSFET’s with MOVPE regrown source/drain
Haruki Kinoshita, Seiko Netsu, Yuichi Mishima, Toru Kanazawa, Yasuyuki Miyamoto (Tokyo Tech) ED2015-44
InGaAs MOSFETs are attractive candidate for future high-speed and low-power-consumption devices. To enhance the performa... [more] ED2015-44
pp.39-44
WPT, MW 2015-04-16
15:25
Tokyo Kikai-Shinko-Kaikan Bldg. Design of a 60GHz InGaAs HEMT class-F power amplifier with reactive negative feedback
Kunihiko Watanabe, Yohtaro Umeda (Tokyo Univ. of Science), Tomohiro Yoshida, Tetsuya Suemitsu (Tohoku Univ.) WPT2015-4 MW2015-4
In this paper, InGaAs HEMT 60GHz Class-F power amplifier (PA) with reactive negative feedback is designed and simulated.... [more] WPT2015-4 MW2015-4
pp.15-19
ED 2014-12-22
14:10
Miyagi   Millimeterwave-photomixing by InGaAs channel HEMT and graphene channel FETs
Tetsuya Kawasaki, Tomohiro Yoshida, Kenta Sugawara, Adrian Dobroiu, Takayuki Watanabe, Hiroki Sugiyama, Hiroyuki Wakou (Tohoku Univ.), Jun-ichi Kani, Jun Terada, Shigeru Kuwano (NTT), Hiroki Ago, Kenji Kawahara (Kyushu Univ.), Katsumi Iwatsuki, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2014-100
We experimentally investigated the photomixing function in the millimeter wave range by using InGaAs channel high electr... [more] ED2014-100
pp.9-13
ED 2014-12-22
14:35
Miyagi   Output power performance of InGaAs/InAlAs HEMT at 90-GHz band
Issei Watanabe (NICT), Akira Endoh (NICT/Fujistu Lab.), Akifumi Kasamatsu (NICT), Takashi Mimura (NICT/Fujistu Lab.) ED2014-101
InGaAs/InAlAs high electron mobility transistors (HEMTs) are the most promising electron devices not only for future ult... [more] ED2014-101
pp.15-19
OPE, LQE 2014-12-19
12:05
Tokyo Kikai-Shinko-Kaikan, NTT Atsugi R&D center [Encouragement Talk] InGaAs photodetectors based on photonic crystal waveguide including ultrasmall buried heterostructure
Kengo Nozaki, Shinji Matsuo, Takuro Fujii, Koji Takeda, Eiichi Kuramochi, Masaya Notomi (NTT) OPE2014-145 LQE2014-132
Ultrasmall InGaAs photodetectors based on a photonic crystal waveguide with a buried heterostructure (BH) were demonstra... [more] OPE2014-145 LQE2014-132
pp.31-35
ED 2014-08-01
13:30
Tokyo Kikai-Shinko-Kaikan Bldg. B3-1 [Invited Talk] InGaAs MOSFET Source Structures Toward High Speed/low Power Applications
Yasuyuki Miyamoto, Toru Kanazawa, Yoshiharu Yonai, Atsushi Kato, Motohiko Fujimatsu, Masashi Kashiwano, Kazuto Ohsawa, Kazumi Ohashi (Tokyo Inst. of Tech.) ED2014-56
Abstract High on-currents (I_{on}) and low off-currents (I_{off}) under low supply voltage are important for logic appli... [more] ED2014-56
pp.19-24
ED 2014-08-01
14:20
Tokyo Kikai-Shinko-Kaikan Bldg. B3-1 Analysis of Mechanisms of Delay Time Generation in III-V DG MOSFETs
Yuki Yajima, Ryoko Ohama, Sachie Fujikawa, Hiroki I. Fujishiro (TUS) ED2014-57
III-V semiconductors have attracted much attention as promising n-type channel materials for the future logic device to ... [more] ED2014-57
pp.25-28
SDM 2014-01-29
10:25
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] High Electron Mobility Triangular InGaAs-OI nMOSFETs with (111)B Side Surfaces Formed by MOVPE Regrowth
Toshifumi Irisawa, Minoru Oda, Keiji Ikeda, Yoshihiko Moriyama, Eiko Mieda, Wipakorn. Jevasuwan, Tatsuro Maeda (AIST), Osamu Ichikawa, Takenori Osada, Masahiko Hata (Sumitomo Chemical), Yasuyuki Miyamoto (Tokyo Inst. of Tech.), Tsutomu Tezuka (AIST) SDM2013-137
riangular In0.53Ga0.47As-OI nMOSFETs with smooth (111)B side surfaces on Si have been successfully fabricated. The trian... [more] SDM2013-137
pp.9-12
ED, MW 2014-01-16
11:20
Tokyo Kikai-Shinko-Kaikan Bldg. InGaAs tri-gate MOSFETs with MOVPE regrown source/drain
Toru Kanazawa, Yuichi Mishima, Haruki Kinoshita, Eiji Uehara, Yasuyuki Miyamoto (Tokyo Inst. of Tech.) ED2013-115 MW2013-180
InGaAs MOSFETs are attractive candidate for future high-speed and low-power-consumption devices. To enhance the performa... [more] ED2013-115 MW2013-180
pp.29-33
ED 2013-12-16
13:55
Miyagi Research Institute of Electrical Communication Tohoku University Monte Carlo Simulation of InAlAs/InGaAs HEMTs with Buried Gate
Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (Fujitsu Labs./NICT) ED2013-92
To achieve higher frequency operations of InP-based high electron mobility transistors (HEMTs), the buried gate structur... [more] ED2013-92
pp.13-17
QIT
(2nd)
2013-11-18
- 2013-11-19
Tokyo Waseda Univ. [Poster Presentation] Designing GHz-clock operating balanced single photon detector and evaluation
Hirofumi Hashimoto, Akihisa Tomita, Atsushi Okamoto (Hokkaido Univ.)
Because of low power consumption and small footprint, avalanche photo diodes (APD) have been commonly applied to photon ... [more]
SDM 2013-11-14
15:50
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Advanced MOSFET simulations using a quantum energy trasport model
Shohiro Sho, Shinji Odanaka (Osaka Univ.) SDM2013-105
A quantum energy transport(QET) model is derived by using a diffusion scaling in the quantum hydrodynamic (QHD) model. I... [more] SDM2013-105
pp.31-36
LQE, OCS, OPE 2013-10-24
10:00
Fukuoka   Development of high performance ultrafast intersubband all-optical gate switch using ion implantation
Ryoichi Akimoto, Feng Jijun, Shin-ichiro Gozu, Teruo Mozume, Hiroshi Ishikawa (AIST) OCS2013-48 OPE2013-94 LQE2013-64
We demonstrate a compact all-optical Michelson interferometer (MI) gating switch with monolithic integration of two diff... [more] OCS2013-48 OPE2013-94 LQE2013-64
pp.5-8
EST, MWP, OPE, MW, EMT, IEE-EMT [detail] 2013-07-18
14:05
Hokkaido Wakkanai Synthesis Cultural Center Wavelength selective switch based on high-order series-coupled quantum well microring resonator
Taro Arakawa, Hiroshi Kamiya, Hiroki Ikehara, Redouane Katouf, Yasuo Kokubun (Yokohama National Univ.) MW2013-68 OPE2013-37 EST2013-32 MWP2013-27
We demonstrate a hitless wavelength-selective switch (WSS) based on InGaAs/InAlAs five-layer asymmetric coupled quantum ... [more] MW2013-68 OPE2013-37 EST2013-32 MWP2013-27
pp.125-130
 Results 1 - 20 of 62  /  [Next]  
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