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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 11 of 11  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2016-12-19
14:40
Miyagi RIEC, Tohoku Univ Effect of Drain-Side Recess Length on DC and RF Characteristics of Cryogenic InP HEMTs
Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT) ED2016-81
We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs with various drain... [more] ED2016-81
pp.7-12
ED 2015-12-21
13:45
Miyagi RIEC, Tohoku Univ Effect of Temperature on DC and RF Characteristics of Cryogenic InP HEMTs
Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT) ED2015-92
We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs at 300, 220, 150, ... [more] ED2015-92
pp.7-11
ED 2014-12-22
14:35
Miyagi   Output power performance of InGaAs/InAlAs HEMT at 90-GHz band
Issei Watanabe (NICT), Akira Endoh (NICT/Fujistu Lab.), Akifumi Kasamatsu (NICT), Takashi Mimura (NICT/Fujistu Lab.) ED2014-101
InGaAs/InAlAs high electron mobility transistors (HEMTs) are the most promising electron devices not only for future ult... [more] ED2014-101
pp.15-19
PN 2013-11-11
14:00
Tokyo Waseda University High-speed and Compact Non-blocking 8x8 InAlGaAs/InAlAs Mach-Zehnder-Type Optical Switch Fabric
Hiroki Koketsu, Syoko Kawasaki, Noriaki Koyama (Waseda Univ.), Aki Takei, Takafumi Taniguchi (Hitachi), Yuichi Matsushima, Katsuyuki Utaka (Waseda Univ.) PN2013-24
High-speed switches are essential devices to construct the next-generation optical networks. We fabricated a compact non... [more] PN2013-24
pp.1-4
LQE, OPE 2013-06-21
14:00
Tokyo   GHz Response of Metamorphic InAlAs MSM Photodetector on GaAs Substrate
Kazuaki Maekita, Takeo Maruyama, Koichi Iiyama (Kanazawa Univ.), Toshi-kazu Suzuki (JAIST) OPE2013-10 LQE2013-20
We fabricated metal-semiconductor-metal (MSM) photodetectors on metamorphic InAlAs layer grown on GaAs substrate. The de... [more] OPE2013-10 LQE2013-20
pp.19-22
PN 2012-03-12
14:55
Nagasaki BaramonNetKan [Encouragement Talk] 4x4 InAlGaAs/InAlAs Optical Switch Fabric by Cascading Mach-Zehnder Interferometer-type Optical Switches with Low-power and Low-polarization-dependent Operation
Yuta Ueda, Noriaki Koyama, Kazuki Kambayashi, Shinji Fujimoto, Katsuyuki Utaka (Waseda Univ.), Takashi Shiota, Takeshi Kitatani (Hitachi) PN2011-89
High-speed optical switches are essential devices to construct next generation optical networks. We have studied on 2 x ... [more] PN2011-89
pp.43-47
ED 2011-07-30
14:45
Niigata Multimedia system center, Nagaoka Univ. of Tech. Sub-band structure and spin-orbit interaction analysis in two-dimensional electron gas bi-layer system in high In-content InGaAs/InAlAs hetero-structures
Masashi Akabori, Tomoyuki Katayama, Kosaku Moromoto, Hiuma Iwase, Syoji Yamada (CNMT JAIST) ED2011-57
In high In-content InGaAs/InAlAs hetero-junctions, two-dimensional electron gas (2DEG) with strong Rashba type (structur... [more] ED2011-57
pp.103-108
PN 2011-03-01
12:40
Kagoshima KKR Kagoshima Keitenkaku 4 x 4 InAlGaAs/InAlAs optical switch fabric by cascading Mach-Zehnder Interferometer-type optical switches with low-power and low-polarization-dependent operation
Yuta Ueda, Noriaki Koyama, Kazuki Kambayashi, Shinji Fujimoto, Katsuyuki Utaka (Waseda Univ.), Takashi Shiota, Takeshi Kitatani (Hitachi) PN2010-71
High-speed optical switches are essential devices to construct next generation optical networks. We have studied on 2 x ... [more] PN2010-71
pp.77-80
MW, ED 2009-01-15
14:50
Tokyo Kikai-Shinko-Kaikan Bldg High-frequency and low-noise performances of InP-based HEMTs for millimeter-wave monolithic integrated circuits
Issei Watanabe, Akira Endoh (National Inst. of Info.&Com. Tech.), Takashi Mimura (National Inst. of Info.&Com. Tech/Fujitsu Lab. Limited,), Toshiaki Matsui (National Inst. of Info.&Com. Tech.) ED2008-214 MW2008-179
InP-based high electron mobility transistors (HEMTs) are the most promising devices not only for future high-speed and h... [more] ED2008-214 MW2008-179
pp.95-99
ED 2008-12-19
15:05
Miyagi Tohoku Univ. Ultrahigh-Speed Operations of InAlAs/In0.7Ga0.3As HEMTs under Cryogenic Conditions
Akira Endoh, Issei Watanabe (NICT), Keisuke Shinohara (NICT/HRL Labs.), Takashi Mimura (Fujitsu Labs.), Toshiaki Matsui (NICT) ED2008-187
DC and RF characteristics at 300 and 16 K of In0.52Al0.48As/In0.7Ga0.3As HEMTs were measured in the gate length Lg range... [more] ED2008-187
pp.15-20
LQE, CPM, EMD, OPE 2008-08-29
10:55
Miyagi Touhoku Univ. The guardring-free InAlAs Avalanche Photodiodes for optical communication
Masaharu Nakaji, Eitaro Ishimura, Eiji Yagyu, Yohei Mikami, Susumu Ihara, Toshitaka Aoyagi, Kiichi Yoshiara, Takahide Ishikawa (Mitsubishi electric corp.) EMD2008-49 CPM2008-64 OPE2008-79 LQE2008-48
We present a guardring-free InAlAs APD, which achieves low noise and high reliability. The InAlAs APDs produced sensitiv... [more] EMD2008-49 CPM2008-64 OPE2008-79 LQE2008-48
pp.89-92
 Results 1 - 11 of 11  /   
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