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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED |
2016-12-19 14:40 |
Miyagi |
RIEC, Tohoku Univ |
Effect of Drain-Side Recess Length on DC and RF Characteristics of Cryogenic InP HEMTs Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT) ED2016-81 |
We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs with various drain... [more] |
ED2016-81 pp.7-12 |
ED |
2015-12-21 13:45 |
Miyagi |
RIEC, Tohoku Univ |
Effect of Temperature on DC and RF Characteristics of Cryogenic InP HEMTs Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT) ED2015-92 |
We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs at 300, 220, 150, ... [more] |
ED2015-92 pp.7-11 |
ED |
2014-12-22 14:35 |
Miyagi |
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Output power performance of InGaAs/InAlAs HEMT at 90-GHz band Issei Watanabe (NICT), Akira Endoh (NICT/Fujistu Lab.), Akifumi Kasamatsu (NICT), Takashi Mimura (NICT/Fujistu Lab.) ED2014-101 |
InGaAs/InAlAs high electron mobility transistors (HEMTs) are the most promising electron devices not only for future ult... [more] |
ED2014-101 pp.15-19 |
PN |
2013-11-11 14:00 |
Tokyo |
Waseda University |
High-speed and Compact Non-blocking 8x8 InAlGaAs/InAlAs Mach-Zehnder-Type Optical Switch Fabric Hiroki Koketsu, Syoko Kawasaki, Noriaki Koyama (Waseda Univ.), Aki Takei, Takafumi Taniguchi (Hitachi), Yuichi Matsushima, Katsuyuki Utaka (Waseda Univ.) PN2013-24 |
High-speed switches are essential devices to construct the next-generation optical networks. We fabricated a compact non... [more] |
PN2013-24 pp.1-4 |
LQE, OPE |
2013-06-21 14:00 |
Tokyo |
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GHz Response of Metamorphic InAlAs MSM Photodetector on GaAs Substrate Kazuaki Maekita, Takeo Maruyama, Koichi Iiyama (Kanazawa Univ.), Toshi-kazu Suzuki (JAIST) OPE2013-10 LQE2013-20 |
We fabricated metal-semiconductor-metal (MSM) photodetectors on metamorphic InAlAs layer grown on GaAs substrate. The de... [more] |
OPE2013-10 LQE2013-20 pp.19-22 |
PN |
2012-03-12 14:55 |
Nagasaki |
BaramonNetKan |
[Encouragement Talk]
4x4 InAlGaAs/InAlAs Optical Switch Fabric by Cascading Mach-Zehnder Interferometer-type Optical Switches with Low-power and Low-polarization-dependent Operation Yuta Ueda, Noriaki Koyama, Kazuki Kambayashi, Shinji Fujimoto, Katsuyuki Utaka (Waseda Univ.), Takashi Shiota, Takeshi Kitatani (Hitachi) PN2011-89 |
High-speed optical switches are essential devices to construct next generation optical networks. We have studied on 2 x ... [more] |
PN2011-89 pp.43-47 |
ED |
2011-07-30 14:45 |
Niigata |
Multimedia system center, Nagaoka Univ. of Tech. |
Sub-band structure and spin-orbit interaction analysis in two-dimensional electron gas bi-layer system in high In-content InGaAs/InAlAs hetero-structures Masashi Akabori, Tomoyuki Katayama, Kosaku Moromoto, Hiuma Iwase, Syoji Yamada (CNMT JAIST) ED2011-57 |
In high In-content InGaAs/InAlAs hetero-junctions, two-dimensional electron gas (2DEG) with strong Rashba type (structur... [more] |
ED2011-57 pp.103-108 |
PN |
2011-03-01 12:40 |
Kagoshima |
KKR Kagoshima Keitenkaku |
4 x 4 InAlGaAs/InAlAs optical switch fabric by cascading Mach-Zehnder Interferometer-type optical switches with low-power and low-polarization-dependent operation Yuta Ueda, Noriaki Koyama, Kazuki Kambayashi, Shinji Fujimoto, Katsuyuki Utaka (Waseda Univ.), Takashi Shiota, Takeshi Kitatani (Hitachi) PN2010-71 |
High-speed optical switches are essential devices to construct next generation optical networks. We have studied on 2 x ... [more] |
PN2010-71 pp.77-80 |
MW, ED |
2009-01-15 14:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
High-frequency and low-noise performances of InP-based HEMTs for millimeter-wave monolithic integrated circuits Issei Watanabe, Akira Endoh (National Inst. of Info.&Com. Tech.), Takashi Mimura (National Inst. of Info.&Com. Tech/Fujitsu Lab. Limited,), Toshiaki Matsui (National Inst. of Info.&Com. Tech.) ED2008-214 MW2008-179 |
InP-based high electron mobility transistors (HEMTs) are the most promising devices not only for future high-speed and h... [more] |
ED2008-214 MW2008-179 pp.95-99 |
ED |
2008-12-19 15:05 |
Miyagi |
Tohoku Univ. |
Ultrahigh-Speed Operations of InAlAs/In0.7Ga0.3As HEMTs under Cryogenic Conditions Akira Endoh, Issei Watanabe (NICT), Keisuke Shinohara (NICT/HRL Labs.), Takashi Mimura (Fujitsu Labs.), Toshiaki Matsui (NICT) ED2008-187 |
DC and RF characteristics at 300 and 16 K of In0.52Al0.48As/In0.7Ga0.3As HEMTs were measured in the gate length Lg range... [more] |
ED2008-187 pp.15-20 |
LQE, CPM, EMD, OPE |
2008-08-29 10:55 |
Miyagi |
Touhoku Univ. |
The guardring-free InAlAs Avalanche Photodiodes for optical communication Masaharu Nakaji, Eitaro Ishimura, Eiji Yagyu, Yohei Mikami, Susumu Ihara, Toshitaka Aoyagi, Kiichi Yoshiara, Takahide Ishikawa (Mitsubishi electric corp.) EMD2008-49 CPM2008-64 OPE2008-79 LQE2008-48 |
We present a guardring-free InAlAs APD, which achieves low noise and high reliability. The InAlAs APDs produced sensitiv... [more] |
EMD2008-49 CPM2008-64 OPE2008-79 LQE2008-48 pp.89-92 |
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