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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
EID, SDM, ITE-IDY [detail] |
2020-12-02 14:30 |
Online |
Online |
[Special Invited Talk]
Defects control in oxide semiconductors at low-temperature and its application to flexible devices Yusaku Magari, Mamoru Furuta (Kochi Univ. of Technol.) EID2020-10 SDM2020-44 |
High-performance In–Ga–Zn–O (IGZO) Schottky diodes (SDs) were fabricated using hydrogenated IGZO (IGZO:H) at a maximum p... [more] |
EID2020-10 SDM2020-44 pp.37-41 |
SDM, EID |
2017-12-22 14:15 |
Kyoto |
Kyoto University |
Cross point synapse using amorphous oxide semiconductor for neurocomputing devices Ryo Tanaka, Sumio Sugisaki, Mutsumi Kimura (Ryukoku Univ.) EID2017-20 SDM2017-81 |
(To be available after the conference date) [more] |
EID2017-20 SDM2017-81 pp.45-49 |
OME, SDM |
2015-04-29 17:05 |
Okinawa |
Oh-hama Nobumoto Memorial Hall |
Effect of fluorine in In-Ga-Zn-O on defect passivartion and reliability of thin-film transistors Mamoru Furuta, Jingxin Jiang, Gengo Tatsuoka, Dapeng Wang (Kochi Univ. of Tech.) SDM2015-8 OME2015-8 |
Effets of fluorine in In-Ga-Zn-O on defect passivation and reliability improvement of thin-film transistor have been inv... [more] |
SDM2015-8 OME2015-8 pp.31-34 |
ICD |
2015-04-17 10:50 |
Nagano |
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[Invited Talk]
A 128kb 4bit/cell Nonvolatile Memory with Crystalline In-Ga-Zn Oxide FET Using Vt Cancel Write Method Takanori Matsuzaki, Tatsuya Onuki, Shuhei Nagatsuka, Hiroki Inoue, Takahiko Ishizu, Yoshinori Ieda, Masayuki Sakakura, Tomoaki Atsumi, Yutaka Shionoiri, Kiyoshi Kato, Takashi Okuda, Yoshitaka Yamamoto (SEL), Masahiro Fujita (The Univ. of Tokyo), Jun Koyama, Shunpei Yamazaki (SEL) ICD2015-9 |
A 128kbit 4bit/cell memory is achieved by a nonvolatile oxide semiconductor RAM test chip with a c-axis aligned crystall... [more] |
ICD2015-9 pp.39-44 |
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