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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 7 of 7  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
PN, EMT, OPE, EST, MWP, LQE, IEE-EMT [detail] 2019-01-18
11:40
Osaka Osaka University Nakanoshima Center Fabrication and characterization of InP/InAsP/InP heterostructure nanowire LEDs
Tomoya Akamatsu, Hiroki Kameda, Masahiro Sasaki, Katsuhiro Tomioka, Junichi Motohisa (Hokkaido Univ.) PN2018-77 EMT2018-111 OPE2018-186 LQE2018-196 EST2018-124 MWP2018-95
Semiconductor nanowires (NWs), which have nanoscale footprints, enables us to realize variety of quantum structures with... [more] PN2018-77 EMT2018-111 OPE2018-186 LQE2018-196 EST2018-124 MWP2018-95
pp.247-250
CPM, ED, EID, SDM, ICD, MRIS, QIT, SCE, OME, EMD
(Joint) [detail]
2018-03-08
13:50
Shizuoka   [Invited Talk] Present status and prospect of III-V RF devices
Naoki Hara, Tsuyoshi Takahashi, Yoichi Kawano, Yasuhiro Nakasha (Fujitsu/Fujitsu Labs.) EMD2017-73 MR2017-44 SCE2017-44 EID2017-46 ED2017-118 CPM2017-138 SDM2017-118 ICD2017-123 OME2017-67
III-V Compound Semiconductors have superior properties, such as high electron mobility and high breakdown voltage, compa... [more] EMD2017-73 MR2017-44 SCE2017-44 EID2017-46 ED2017-118 CPM2017-138 SDM2017-118 ICD2017-123 OME2017-67
pp.9-10
LQE, OPE 2013-06-21
14:00
Tokyo   GHz Response of Metamorphic InAlAs MSM Photodetector on GaAs Substrate
Kazuaki Maekita, Takeo Maruyama, Koichi Iiyama (Kanazawa Univ.), Toshi-kazu Suzuki (JAIST) OPE2013-10 LQE2013-20
We fabricated metal-semiconductor-metal (MSM) photodetectors on metamorphic InAlAs layer grown on GaAs substrate. The de... [more] OPE2013-10 LQE2013-20
pp.19-22
LQE, OPE 2011-06-30
14:50
Tokyo Kikai-Shinko-Kaikan Bldg. InP/GaInAsP Waveguide Dual Core Spot Size Converter for Optical Fiber
Yohei Sobu, Hiroshi Hamada, Tetsuya Mizumoto (Tokyo Tech) OPE2011-23 LQE2011-23
To reduce a coupling loss between semiconductor optical devices and optical fibers, we developed a dual core Spot Size C... [more] OPE2011-23 LQE2011-23
pp.41-45
MW, ED 2011-01-14
13:25
Tokyo Kikai-Shinko-Kaikan Bldg. III-V quantum well channel MOSFET with back electrode
Toru Kanazawa, Ryousuke Terao, Yutaro Yamaguchi, Shunsuke Ikeda, Yoshiharu Yonai, Atsushi Kato, Yasuyuki Miyamoto (Tokyo Tech) ED2010-188 MW2010-148
III-V compound semiconductors are one of the candidates as high mobility channel materials for future high performance l... [more] ED2010-188 MW2010-148
pp.69-73
ED, SDM 2010-07-01
10:45
Tokyo Tokyo Inst. of Tech. Ookayama Campus [Invited Talk] III-V/Ge CMOS technologies and heterogeneous integrations on Si platform
Shinichi Takagi, Mitsuru Takenaka (Univ. of Tokyo.) ED2010-78 SDM2010-79
CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of key devices for high performanc... [more] ED2010-78 SDM2010-79
pp.119-124
ED, MW 2010-01-14
10:00
Tokyo Kikai-Shinko-Kaikan Bldg InP/InGaAs composite channel MOSFET with Al2O3 gate dielectric
Toru Kanazawa, Kazuya Wakabayashi, Hisashi Saito, Ryosuke Terao, Tomonori Tajima, Shunsuke Ikeda, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.) ED2009-181 MW2009-164
III-V semiconductor device technology will potentially be combined with the LSI technology to realize circuits with capa... [more] ED2009-181 MW2009-164
pp.39-42
 Results 1 - 7 of 7  /   
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