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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
PN, EMT, OPE, EST, MWP, LQE, IEE-EMT [detail] |
2019-01-18 11:40 |
Osaka |
Osaka University Nakanoshima Center |
Fabrication and characterization of InP/InAsP/InP heterostructure nanowire LEDs Tomoya Akamatsu, Hiroki Kameda, Masahiro Sasaki, Katsuhiro Tomioka, Junichi Motohisa (Hokkaido Univ.) PN2018-77 EMT2018-111 OPE2018-186 LQE2018-196 EST2018-124 MWP2018-95 |
Semiconductor nanowires (NWs), which have nanoscale footprints, enables us to realize variety of quantum structures with... [more] |
PN2018-77 EMT2018-111 OPE2018-186 LQE2018-196 EST2018-124 MWP2018-95 pp.247-250 |
CPM, ED, EID, SDM, ICD, MRIS, QIT, SCE, OME, EMD (Joint) [detail] |
2018-03-08 13:50 |
Shizuoka |
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[Invited Talk]
Present status and prospect of III-V RF devices Naoki Hara, Tsuyoshi Takahashi, Yoichi Kawano, Yasuhiro Nakasha (Fujitsu/Fujitsu Labs.) EMD2017-73 MR2017-44 SCE2017-44 EID2017-46 ED2017-118 CPM2017-138 SDM2017-118 ICD2017-123 OME2017-67 |
III-V Compound Semiconductors have superior properties, such as high electron mobility and high breakdown voltage, compa... [more] |
EMD2017-73 MR2017-44 SCE2017-44 EID2017-46 ED2017-118 CPM2017-138 SDM2017-118 ICD2017-123 OME2017-67 pp.9-10 |
LQE, OPE |
2013-06-21 14:00 |
Tokyo |
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GHz Response of Metamorphic InAlAs MSM Photodetector on GaAs Substrate Kazuaki Maekita, Takeo Maruyama, Koichi Iiyama (Kanazawa Univ.), Toshi-kazu Suzuki (JAIST) OPE2013-10 LQE2013-20 |
We fabricated metal-semiconductor-metal (MSM) photodetectors on metamorphic InAlAs layer grown on GaAs substrate. The de... [more] |
OPE2013-10 LQE2013-20 pp.19-22 |
LQE, OPE |
2011-06-30 14:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
InP/GaInAsP Waveguide Dual Core Spot Size Converter for Optical Fiber Yohei Sobu, Hiroshi Hamada, Tetsuya Mizumoto (Tokyo Tech) OPE2011-23 LQE2011-23 |
To reduce a coupling loss between semiconductor optical devices and optical fibers, we developed a dual core Spot Size C... [more] |
OPE2011-23 LQE2011-23 pp.41-45 |
MW, ED |
2011-01-14 13:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
III-V quantum well channel MOSFET with back electrode Toru Kanazawa, Ryousuke Terao, Yutaro Yamaguchi, Shunsuke Ikeda, Yoshiharu Yonai, Atsushi Kato, Yasuyuki Miyamoto (Tokyo Tech) ED2010-188 MW2010-148 |
III-V compound semiconductors are one of the candidates as high mobility channel materials for future high performance l... [more] |
ED2010-188 MW2010-148 pp.69-73 |
ED, SDM |
2010-07-01 10:45 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
[Invited Talk]
III-V/Ge CMOS technologies and heterogeneous integrations on Si platform Shinichi Takagi, Mitsuru Takenaka (Univ. of Tokyo.) ED2010-78 SDM2010-79 |
CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of key devices for high performanc... [more] |
ED2010-78 SDM2010-79 pp.119-124 |
ED, MW |
2010-01-14 10:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
InP/InGaAs composite channel MOSFET with Al2O3 gate dielectric Toru Kanazawa, Kazuya Wakabayashi, Hisashi Saito, Ryosuke Terao, Tomonori Tajima, Shunsuke Ikeda, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.) ED2009-181 MW2009-164 |
III-V semiconductor device technology will potentially be combined with the LSI technology to realize circuits with capa... [more] |
ED2009-181 MW2009-164 pp.39-42 |
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