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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ICD | 2023-04-10 09:30 |
Kanagawa | (Primary: On-site, Secondary: Online) |
[Invited Lecture]
A c-axis aligned crystalline IGZO FET and a 0.06-um2 HfO2-based capacitor 1T1C FeRAM with high voltage tolerance and 10-ns write time Masami Endo, Numata Shiyuu, Ohshima Kazuaki, Egi Yuji, Isaka Fumito, Ohno Toshikazu, Tezuka Sachiaki, Hamada Toshiki, Furutani Kazuma, Tsuda Kazuki, Matsuzaki Takanori, Onuki Tatsuya, Murakawa Tsutomu, Kunitake Hitoshi (SEL), Masaharu Kobayashi (The Univ. of Tokyo), Yamazaki Shunpei (SEL) |
[more] | |
| SDM | 2023-01-30 13:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. B3-1 | [Invited Talk]
A c-axis aligned crystalline IGZO FET and a 0.06-µm2 HfO2-based Capacitor 1T1C FeRAM with High Voltage Tolerance and 10-ns Write Time Kazuaki Ohshima, Masami Endo, Shiyuu Numata, Yuji Egi, Fumito Isaka, Toshikazu Ohno, Sachiaki Tezuka, Toshiki Hamada, Kazuma Furutani, Kazuki Tsuda, Takanori Matsuzaki, Tatsuya Onuki, Tsutomu Murakawa, Hitoshi Kunitake (SEL), Masaharu Kobayashi (The Univ. of Tokyo), Shunpei Yamazaki (SEL)  SDM2022-80 |
We fabricated ferroelectric memories using oxide semiconductor field-effect transistors and HfO2-based capacitors. A da... [more] |
SDM2022-80 pp.5-8 |
| ITE-IDY, EID, SID-JC [detail] | 2022-07-29 16:10 |
Online | Online (Zoom) | [Invited Talk]
Advanced Hybrid Process with Back Contact IGZO-TFT Masatomo Honjo, Yujiro Takeda, Mehadi Aman, Kazuatsu Ito, Kohei Tanaka, Hiroshi Matsukizono, Wataru Nakamura (SDTC) |
We propose the new structure of hybrid backplane technology with IGZO-TFT and LTPS. In this structure, IGZO is directly ... [more] | |
| OME, SDM | 2022-04-22 14:10 |
Miyazaki | Takachiho Hall (Primary: On-site, Secondary: Online) |
Mechanism for improving electrical properties of InGaZnOx thin-film transistors through annealing Rostislav Velichko (KUT), Yusaku Magari (Shimane Univ.), Mamoru Furuta (KUT) SDM2022-4 OME2022-4 |
(To be available after the conference date) [more] | SDM2022-4 OME2022-4 pp.17-20 |
| SDM | 2022-01-31 15:30 |
Online | Online | [Invited Talk]
Novel Analog in-Memory Computing with < 1nA Current/Cell and 143.9 TOPS/W Enabled by Monolithic Normally-off Zn-rich CAAC-IGZO FET-on-Si CMOS Technology Yoshiyuki Kurokawa, Haruyuki Baba, Satoru Ohshita, Toshiki Hamada, Yoshinori Ando, Ryota Hodo, Toshikazu Ono, Takashi Hirose, Hitoshi Kunitake, Tsutomu Murakawa (Semiconductor Energy Lab.), Toru Nakura (Fukuoka Univ.), Masaharu Kobayashi (Tokyo Univ.), Hiroshi Yoshida, Min-Cheng Chen (PSMC), Ming-Han Liao (National Taiwan Univ.), Shou-Zen Chang (PSMC), Shunpei Yamazaki (Semiconductor Energy Lab.) SDM2021-72 |
We have successfully demonstrated high-efficiency analog in-memory computing (AiMC) chips, which are monolithically fabr... [more] | SDM2021-72 pp.16-19 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 11:25 |
Online | Online | Stacked cross-point memory of synaptic elements using IGZO thin film Etsuko Iwagi (RU), Takumi Tsuno (NAIST), Mutsumi Kimura (RU) EID2020-4 SDM2020-38 |
We conducted research and development of a large hardware neural network by using oxide semiconductors of In-Ga-Zn-O (IG... [more] | EID2020-4 SDM2020-38 pp.13-16 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 11:55 |
Online | Online | Investigation of oxide semiconductor thin film synapse using STDP learning method Tetsuya Katagiri, Daiki Yamakawa, Kenta Yatida, Kazuki Morigaki, Mutsumi Kimura (Ryukoku Univ.) EID2020-6 SDM2020-40 |
Neuromorphic hardware is expected as low power consumption and high performance hardware that does not have the power co... [more] | EID2020-6 SDM2020-40 pp.21-24 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 12:10 |
Online | Online | Brain type system using IGZO thin film synapses Yuki Onishi, Yuki Shibayama, Daiki Yamakawa (Ryukoku Univ.), Hiroya Ikeda, Yasuhiko Nakajima (NAIST), Mutumi Kimura (Ryukoku Univ./NAIST) EID2020-7 SDM2020-41 |
Neural networks have been actively studied as a future electronics technology. However, since the von Neumann-type arith... [more] | EID2020-7 SDM2020-41 pp.25-28 |
| EID, ITE-IDY, IEIJ-SSL, SID-JC, IEE-EDD [detail] | 2020-01-24 11:10 |
Tottori | Tottori Univ. | [Poster Presentation]
Physical properties of anodized aluminum oxide for low temperature processed IGZO thin-film transistors. Kono Shuya, Mori Marin, Koretomo Daichi, Furuta Mamoru (KUT) EID2019-16 |
(To be available after the conference date) [more] | EID2019-16 pp.129-131 |
| ICD | 2018-04-20 13:50 |
Tokyo | [Invited Talk]
Memory LSI using crystalline oxide semiconductor FET Jun Koyama, Takako Seki, Yuto Yakubo, Satoru Ohshita, Kazuma Furutani, Takahiko Ishizu, Tomoaki Atsumi, Yoshinori Ando, Daisuke Matsubayashi, Kiyoshi Kato, Takashi Okuda (SEL), Masahiro Fujita (The Univ. of Tokyo), Shunpei Yamazaki (SEL) ICD2018-12 |
FETs fabricated with a c-axis aligned crystalline In-Ga-Zn oxide semiconductor (CAAC-IGZO) have an extremely low off-sta... [more] | ICD2018-12 pp.47-52 |
|
| SDM, OME | 2018-04-07 13:10 |
Okinawa | Okinawaken Seinen Kaikan | [Invited Talk]
properties of IGZO thin-film transistors. Mamoru Furuta, Aman S G Mehadi, Daichi Koretomo, Yusaku Magari (Kochi Univ. of Tech.) SDM2018-6 OME2018-6 |
(To be available after the conference date) [more] | SDM2018-6 OME2018-6 pp.25-28 |
| SDM, OME | 2018-04-07 13:50 |
Okinawa | Okinawaken Seinen Kaikan | Thin-film transistor with InGaZnOx-hetero-channel Ryunosuke Higashi, Daichi Koretomo, Hirosato Tanaka (Kochi Univ. of Tech.), Seiichiro Takahashi, Isamu Yashima (Mitsui Mining & Smelting Co.,LTD), Mamoru Furuta (Kochi Univ. of Tech.) SDM2018-7 OME2018-7 |
(To be available after the conference date) [more] | SDM2018-7 OME2018-7 pp.29-31 |
| SDM, OME | 2018-04-07 14:15 |
Okinawa | Okinawaken Seinen Kaikan | Origin of Schottky properties in InGaZnOX/AgOX hetero-interface and its application to flexible device. Yusaku Magari, Hisao Makino, Shinsuke Hashimoto, Kenichiro Hamada, Kentaro Masuda, Mamoru Furuta (Kochi Univ. of Tech.) SDM2018-8 OME2018-8 |
Oxide heterojunction of the In–Ga–Zn–O (IGZO) and the silver oxide (AgOX) has been reported to exhibit better Schottky c... [more] | SDM2018-8 OME2018-8 pp.33-36 |
| SDM, EID | 2016-12-12 16:45 |
Nara | NAIST | Development of Synapses in Neural Networks using a-IGZO Thin Films Toshimasa Hori, Ryo Tanaka, Yuki Koga, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) EID2016-29 SDM2016-110 |
Neural networks are information processing models based on human brains, which have been actively studied. However, in o... [more] | EID2016-29 SDM2016-110 pp.89-92 |
| SDM, OME | 2016-04-09 10:50 |
Okinawa | Okinawa Prefectural Museum & Art Museum | Device simulation analysis of carrier transport in In-Ga-Zn-O thin-film transistors
-- Influence of carrier concentration in back-channel region -- Daichi Koretomo, Tatsuya Toda (KUT), Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.), Mamoru Furuta (KUT) SDM2016-14 OME2016-14 |
The influence of high carrier concentration region in In-Ga-Zn-O (IGZO ) on the electrical properties of a bottom-gate I... [more] | SDM2016-14 OME2016-14 pp.57-60 |
| EID, SDM | 2015-12-14 13:45 |
Kyoto | Ryukoku University, Avanti Kyoto Hall | Evaluation of In2O3 film deposited by RF magnetron sputtering Toshihiro Yoshioka, Junji Ogawa, Masahiro Yuge, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) EID2015-15 SDM2015-98 |
Oxide semiconductors have attracted much attention as a promising alternative to hydrogenated amorphous Si (a-Si:H) and ... [more] | EID2015-15 SDM2015-98 pp.27-30 |
| CPM, OPE, LQE, R, EMD | 2015-08-27 10:35 |
Aomori | Aomori-Bussankan-Asupamu | Elecrically Stable IGZO Thin Film Transistors using Ionic-Liquid Gate Dielectric Hiromi Okada, Mami Fujii, Yasuaki Ishikawa (NAIST), Kazumoto Miwa (CRIEPI), Yukiharu Uraoka (NAIST), Shimpei Ono (CRIEPI) R2015-23 EMD2015-31 CPM2015-47 OPE2015-62 LQE2015-31 |
Amorphous-InGaZnO(a-IGZO) thin-film transistors (TFTs) have good characteristics such as low leakage current, high field... [more] | R2015-23 EMD2015-31 CPM2015-47 OPE2015-62 LQE2015-31 pp.5-8 |
| CPM, OPE, LQE, R, EMD | 2015-08-27 11:00 |
Aomori | Aomori-Bussankan-Asupamu | Highly reliable a-InGaZnO thin-film transistors with fluorine in a gate insulator Haruka Yamazaki, Yasuaki Ishikawa, Mami Fujii, Juan Paolo Bermundo (NAIST), Eiji Takahashi, Yasunori Andoh (Nissin Electric), Yukiharu Uraoka (NAIST) R2015-24 EMD2015-32 CPM2015-48 OPE2015-63 LQE2015-32 |
Considerable attention has been paid to amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) as per... [more] | R2015-24 EMD2015-32 CPM2015-48 OPE2015-63 LQE2015-32 pp.9-11 |
| EID, SID-JC, ITE-IDY, IEIJ-SSL [detail] | 2015-07-28 16:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Report on SID 2015: AMD Tokiyoshi Matsuda (Ryukoku Univ.) EID2015-4 |
Display Week 2015 (SID’15) was held from May 31 to June 5, 2015 in San Jose, USA. Here, outstanding presentations in Ses... [more] | EID2015-4 pp.37-40 |
| OME, SDM | 2015-04-29 17:05 |
Okinawa | Oh-hama Nobumoto Memorial Hall | Effect of fluorine in In-Ga-Zn-O on defect passivartion and reliability of thin-film transistors Mamoru Furuta, Jingxin Jiang, Gengo Tatsuoka, Dapeng Wang (Kochi Univ. of Tech.) SDM2015-8 OME2015-8 |
Effets of fluorine in In-Ga-Zn-O on defect passivation and reliability improvement of thin-film transistor have been inv... [more] | SDM2015-8 OME2015-8 pp.31-34 |
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