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 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, LQE, CPM 2012-11-30
16:25		 Osaka Osaka City University Study on inductively-coupled-plasma-dry-etching-mask for AlGaAs photonic crystal fabrication
Yuji Togano, Yuta Kitabayashi, Fumitaro Ishikawa, Masahiko Kondow (Osaka Univ.) ED2012-90 CPM2012-147 LQE2012-118		 We investigate inductively coupled plasma etching mask of Al-rich AlGaAs for photonic crystal (PC) fabrication. This stu... [more] ED2012-90 CPM2012-147 LQE2012-118
pp.117-120
ED 2012-07-26
15:25		 Fukui Fukui University Effect of ICP Etching on p-type GaN Schottky Contacts
Toshifumi Takahashi (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Cable), Kazuki Nomoto (Univ. of Notre Dame), Kenji Shiojima (Univ. of Fukui) ED2012-45		 Low-Mg-doped p-GaN Schottky contacts were applied to evaluate inductive coupled plasma (ICP) etching damages. The ICP ... [more] ED2012-45
pp.21-24
ED, SDM, CPM 2012-05-18
09:25		 Aichi VBL, Toyohashi Univ. of Technol. Interface characterization of GaN-based MOS heterostructures employing ICP-etched AlGaN surfaces
Zenji Yatabe, Yujin Hori, Sungsik Kim, Tamotsu Hashizume (Hokkaido Univ.) ED2012-27 CPM2012-11 SDM2012-29		 Our aim is to investigate the effects of dry etching of AlGaN surface on interface properties of GaN-based MOS structure... [more] ED2012-27 CPM2012-11 SDM2012-29
pp.49-52
LQE, ED, CPM 2011-11-17
13:20		 Kyoto Katsura Hall，Kyoto Univ. Interface characterization of MOS structures fabricated on dry-etched GaN and AlGaN
Sungsik Kim, Yujin Hori, Zenji Yatabe, Tamotsu Hashizume (Hokkaido Univ.) ED2011-78 CPM2011-127 LQE2011-101		 We have investigated impacts of dry etching of GaN and AlGaN surfaces on interface properties of GaN-based MOS structure... [more] ED2011-78 CPM2011-127 LQE2011-101
pp.25-28
ED 2009-06-11
16:50		 Tokyo   A study on low damage dry etching for AlGaN/GaN-HEMT
Masahiko Kuraguchi, Miki Yumoto, Yoshiharu Takada, Kunio Tsuda (Toshiba Corp.) ED2009-43		 Recessed gate structure is promising to improve GaN electric devices. Low damage dry etching technique is required to fo... [more] ED2009-43
pp.37-40
SDM, ED, CPM 2007-05-24
14:50		 Shizuoka Shizuoka Univ. Analysis of plasma etching damages and characterization of annealing effects on GaN by excess carrier lifetime measurements
Keisuke Fukushima, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs., Inc.) 		Gallium nitride (GaN) is promising for high power and high frequency devices, and the etching processes is necessary in ... [more]
 Results 1 - 6 of 6  /   
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