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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 10 of 10  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ICD, ITE-IST [detail] 2023-08-01
16:10
Hokkaido Hokkaido Univ. Multimedia Education Bldg. 3F
(Primary: On-site, Secondary: Online)
Additional High-Pressure Hydrogen Annealing Improves the Cryogenic Operation of Si (110)-oriented n-MOSFETs
Shunsuke Shitakata (Keio Univ./AIST), Hiroshi Oka, Takumi Inaba, Shota Iizuka, Kimihiko Kato, Takahiro Mori (AIST) SDM2023-41 ICD2023-20
Cryo-CMOS technology is highly demanded to realize control circuits of large-scale quantum computers, which control and ... [more] SDM2023-41 ICD2023-20
pp.28-31
EID, ITE-IDY, IEIJ-SSL, SID-JC, IEE-EDD [detail] 2020-01-23
15:15
Tottori Tottori Univ. [Invited Lecture] Surface Treatment using Atomic Hydrogen for Semiconductor Process
Akira Heya (Univ. of Hyogo)
To realize flexible displays and sheet computers, we have tried to develop the novel surface treatment, named Atomic Hyd... [more]
SDM 2013-06-18
16:10
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Unusual Generation and Elimination of Mobile Ions in Thermally Grown Oxides in SiC-MOS Devices
Heiji Watanabe, Atthawut Chanthaphan (Osaka Univ), Yuki Nakano, Takashi Nakamura (ROHM), Takuji Hosoi, Takayoshi Shimura (Osaka Univ) SDM2013-61
Unusual generation and elimination of mobile ions in thermally grown SiO2 on 4H-SiC(0001) were systematically investigat... [more] SDM2013-61
pp.87-90
MW, ED 2013-01-18
14:55
Tokyo Kikai-Shinko-Kaikan Bldg. AlGaN/GaN MIS-Gate HEMTs with SiCN Gate Stacks
Kengo Kobayashi, Tomohiro Yoshida, Taiichi Otsuji, Ryuji Katayama, Takashi Matsuoka, Tetsuya Suemitsu (Tohoku Univ.) ED2012-126 MW2012-156
This paper reports AlGaN/GaN metal-insulator-semiconductor (MIS)-gate high electron mobility transistors (HEMTs) with a ... [more] ED2012-126 MW2012-156
pp.75-78
ED, LQE, CPM 2012-11-30
13:15
Osaka Osaka City University Mg acceptor activation inp-GaN of the structure with n-GaN surface
Yuka Kuwano, Mitsuru Kaga, Takatoshi Morita, Kouji Yamashita, , Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.) ED2012-83 CPM2012-140 LQE2012-111
Thermal annealing step is required to dissociate acceptor-hydrogen complexes and electrically activate the acceptor dopa... [more] ED2012-83 CPM2012-140 LQE2012-111
pp.81-85
SDM, OME 2010-04-23
14:40
Okinawa Okinawa-Ken-Seinen-Kaikan Bldg. Effect of hydrogen on growth of disk-shaped crystal grain in poly-Si film prepared by excimer laser annealing
Akira Heya, Kazufumi Yamada (Univ. Hyogo), Naoya Kawamoto (Yamaguchi Univ.), Naoto Matsuo (Univ. Hyogo) SDM2010-10 OME2010-10
The effect of hydrogen on the growth of disk-shaped grain formed by excimer laser annealing (ELA) at high-energy densiti... [more] SDM2010-10 OME2010-10
pp.45-48
ED, LQE, CPM 2009-11-19
17:10
Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) High Efficiency ultraviolet emitters by activation annealing in oxygen flow
Kengo Nagata, Tomoki Ichikawa, Kenichiro Takeda, Kentaro Nagamatsu, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.) ED2009-144 CPM2009-118 LQE2009-123
Activation annealing of Mg-doped p-type Al0.17Ga0.83N in different gases was conducted. The hole concentration in Al0.17... [more] ED2009-144 CPM2009-118 LQE2009-123
pp.75-80
CPM 2009-10-30
09:25
Toyama Toyama Prefectural University Lowering of the AZO film resisitivity by hydrogen radical annealing
Yutaka Ohshima, Masami Tahara, Mohd Hanif (Nagaoka Univ. of Tech.), Hironori Katagiri, Kazuo Jinbo (Nagaoka National College of Tech.), Yuichiro Kuroki, Masasuke Takata, Kanji Yasui (Nagaoka Univ. of Tech.) CPM2009-97
Al doped ZnO (AZO) films has been deposited by a radio frequency (rf) magnetron sputtering with a third electrode. The
... [more]
CPM2009-97
pp.37-41
CPM 2008-10-30
14:30
Niigata Niigata Univ. Lowering the resistivity of Al dope ZnO films deposited by a magnetron sputtering with a third electrode
Yutaka Oshima, Yuichiro Makino (nagaoka Univ. of Tech.), Hironori Katagiri, Kazuo Jinbo (Nagaoka National College of Tech,), Yuichiro Kuroki, Kanji Yasui, Masasuke Takata, Tadashi Akahane (nagaoka Univ. of Tech.) CPM2008-78
Improvement of the uniformity in the resistivity of Al doped ZnO (AZO) films has been obtained using a radio frequency (... [more] CPM2008-78
pp.19-22
SDM, OME 2008-04-11
16:10
Okinawa Okinawa Seinen Kaikan Improvement of Interface Property in Pentacene TFT by Atomic Hydrogen Annealing
Akira Heya, Masahiko Sato, Hiroshi Hasegawa, Naoto Matsuo (Univ. of Hyogo) SDM2008-13 OME2008-13
We tried to improve electrical properties of organic thin-film transistors (OTFTs) by atomic hydrogen annealing (AHA). ... [more] SDM2008-13 OME2008-13
pp.61-66
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