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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2014-06-19 09:30 |
Aichi | VBL, Nagoya Univ. | Process Design of High-k/Ge Gate Stack for Improving Thermal Stability and Interface Properties in Sub-1-nm Regime Ryohei Asahara, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.)  SDM2014-43 |
Suppression of GeOx formation and Ge diffusion into high-k layer is important to develop sub-1-nm EOT metal/high-k gate ... [more] | SDM2014-43 pp.1-5 |
| SDM | 2013-06-18 11:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks Chih-Yu Chang, Masafumi Yokoyama, Sang-Hyeon Kim (Univ. of Tokyo), Osamu Ichikawa, Takenori Osada, Masahiko Hata (Sumitomo Chemical), Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2013-50 |
Electrical properties of Al2O3 and HfO2/InGaAs metal-oxide-semiconductor (MOS) capacitors with Al, Au and Pd gate electr... [more] | SDM2013-50 pp.33-37 |
| SDM | 2012-06-21 11:55 |
Aichi | VBL, Nagoya Univ. | Oxygen-induced high-k dielectric degradation in TiN/Hf-based high-k gate stacks Takuji Hosoi, Yuki Odake, Hiroaki Arimura, Keisuke Chikaraishi, Naomu Kitano, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2012-51 |
Effective work function control and equivalent oxide thickness (EOT) scaling are the major concerns for implementing met... [more] | SDM2012-51 pp.43-46 |
| SDM | 2011-07-04 15:40 |
Aichi | VBL, Nagoya Univ. | Hf and La upward diffusion into TiN electrode in TiN/HfLaSiO/SiO2 gate stacks induced by high-temperature annealing and its suppression with MIPS structure Yuki Odake, Hiroaki Arimura, Masayuki Saeki, Keisuke Chikaraishi, Naomu Kitano, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2011-65 |
We investigated Hf and La upward diffusion in TiN/HfLaSiO/SiO2 gate stacks by means of electrical characterization and X... [more] | SDM2011-65 pp.87-92 |
| SDM | 2010-11-11 14:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Comprehensive understanding of oxygen vacancy induced effective work function modulation in high-k/metal gate stacks Takuji Hosoi, Masayuki Saeki, Yuki Kita, Yudai Oku, Hiroaki Arimura, Naomu Kitano (Osaka Univ.), Kenji Shiraishi, Keisaku Yamada (Univ. Tsukuba), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2010-175 |
Effective work function of p-type gate electrodes on Hf-based high-k dielectrics is known to decrease after high tempera... [more] | SDM2010-175 pp.23-28 |
| SDM | 2010-06-22 13:45 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | High Temperature Rapid Thermal Annealing of Rare-Earth Oxides Dielectrics for Highly Scaled Gate Stack of EOT=0.5 nm Daisuke Kitayama, Tomotsune Koyanagi, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech.) SDM2010-41 |
A direct contact of high-k/Si substrate (without SiO<sub>2</sub> interfacial layer structure) is required for achieving ... [more] | SDM2010-41 pp.43-48 |
| SDM | 2009-06-19 14:10 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Electrical Characterization of High-k Gate Dielectrics on Ge with HfGeN and GeO2 Interlayers
-- Formation of Insulator on Ge Substrate -- Hiroshi Nakashima, Kana Hirayama, Haigui Yang, Dong Wang (Kyushu Univ.) SDM2009-35 |
We are searching MIS structure with good interface and insulating properties for high mobility Ge channel. Our approach... [more] | SDM2009-35 pp.51-56 |
| SDM | 2009-06-19 15:10 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Investigation of Al2O3 Diffusion Annealing Process for Low Vt pMISFET with Al2O3-Capped HfO2 Dielectrics Tetsu Morooka, Takeo Matsuki, Nobuyuki Mise, Satoshi Kamiyama, Toshihide Nabatame, Takahisa Eimori, Yasuo Nara, Jiro Yugami, Kazuto Ikeda, Yuzuru Ohji (Selete) SDM2009-38 |
We have systematically studied the effect of post deposition annealing (PDA) for Al2O3-capped HfO2 on flatband voltage (... [more] | SDM2009-38 pp.67-70 |
| SDM | 2008-06-10 09:55 |
Tokyo | An401・402, Inst. Indus. Sci., The Univ. of Tokyo | Gate Dielectrics Interface Control for III-V MISFET Tetsuji Yasuda, Noriyuki Miyata (AIST), Akihiro Ohtake (NIMS) SDM2008-49 |
Introduction of III-V semiconductors to the n channel of CMOS devices is one of the options to sustain performance impro... [more] | SDM2008-49 pp.41-46 |
| SDM | 2007-06-08 12:45 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Annealing atmosphere dependence of effective work function of metal gates on LaAlO3 gate dielectrics. Masamichi Suzuki, Yoshinori Tsuchiya, Masato Koyama (Toshiba) SDM2007-45 |
The effective work functions (Φeff ) of various metals on LaAlO3 were systematically investigated. Contrary to the case ... [more] | SDM2007-45 pp.75-80 |
| ICD, SDM | 2005-08-19 11:10 |
Hokkaido | HAKODATE KOKUSAI HOTEL | Improvement of threshold voltage asymmetry by Al compositional mudulation and partially silicided gate electrode for Hf-based high-k CMOSFETs Masaru Kadoshima, Arito Ogawa, Masashi Takahashi (MIRAI-ASET), Hiroyuki Ota (MIRAI-ASRC, AIST), Nobuyuki Mise, Kunihiko Iwamoto (MIRAI-ASET), Shinji Migita (MIRAI-ASRC, AIST), Hideaki Fujiwara, Hideki Satake, Toshihide Nabatame (MIRAI-ASET), Akira Toriumi (MIRAI-ASRC, AIST, The Univ. of Tokyo) |
Threshold voltage (Vth) tuning by engineering Fermi-level pinning (FLP) on HfAlOx(N) dielectrics is demonstrated for CMO... [more] | SDM2005-148 ICD2005-87 pp.31-36 |
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