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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2016-06-29 11:55 |
Tokyo | Campus Innovation Center Tokyo | Effect of Al2O3layer on leakage current properties for DRAM capacitor with ZrO2/Al2O3/ZrO2multilayer Takashi Onaya (Meiji Univ./NIMS), Toshihide Nabatame, Tomomi Sawada (NIMS/JST-CREST), Kazunori Kurishima (Meiji Univ./NIMS), Naomi Sawamoto (Meiji Univ.), Akihiko Ohi, Toyohiro Chikyo (NIMS), Atsushi Ogura (Meiji Univ.)  SDM2016-37 |
We studied characteristic of DRAM capacitors with ZrO2/Al2O3/ZrO2 (ZAZ) multilayer fabricated by atomic layer deposition... [more] | SDM2016-37 pp.27-32 |
| SDM | 2015-06-19 15:15 |
Aichi | VBL, Nagoya Univ. | Electrical properties of GIZO TFT with ultrathin Al2O3 insulators by PE-ALD method Kazunori Kurishima (Meiji Univ./NIMS), Toshihide Nabatame, Kazuhito Tsukagoshi, Akihiko Ohi, Toyohiro Chikyow (NIMS), Atsushi Ogura (Meiji Univ.) SDM2015-51 |
To investigate the influence of an Al2O3 layer on the electrical properties of Ga-In-Zn-O (GIZO) thin-film transistors (... [more] | SDM2015-51 pp.69-73 |
| SDM | 2014-06-19 09:30 |
Aichi | VBL, Nagoya Univ. | Process Design of High-k/Ge Gate Stack for Improving Thermal Stability and Interface Properties in Sub-1-nm Regime Ryohei Asahara, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2014-43 |
Suppression of GeOx formation and Ge diffusion into high-k layer is important to develop sub-1-nm EOT metal/high-k gate ... [more] | SDM2014-43 pp.1-5 |
| ED | 2013-08-09 09:25 |
Toyama | University of Toyama | Effect of Vacuum Annealing on Al2O3/GaSb MOS Interfaces Takahiro Gotow, Sachie Fujikawa, Hiroki I. Fujishiro (Tokyo Univ. of Science), Mutsuo Ogura, Tetsuji Yasuda, Tatsuro Maeda (AIST) ED2013-45 |
GaSb layer were grown on GaAs substrates by Metal Organic Chemical Vapor Deposition (MOCVD).The root mean square (RMS) s... [more] | ED2013-45 pp.37-42 |
| SDM | 2013-06-18 10:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Suppression of GeOx with rutile TiO2 Interlayer between HfO2 and Ge Kazuyoshi Kobashi (Meiji Univ.), Takahiro Nagata, Toshihide Nabatame, Yoshiyuki Yamashita (NIMS), Atsushi Ogura (Meiji Univ.), Toyohiro Chikyow (NIMS) SDM2013-48 |
As a alternative of Si channel, the Ge channel has been proposed and has attracted much attention because of high electr... [more] | SDM2013-48 pp.25-28 |
| SDM | 2013-06-18 11:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks Chih-Yu Chang, Masafumi Yokoyama, Sang-Hyeon Kim (Univ. of Tokyo), Osamu Ichikawa, Takenori Osada, Masahiko Hata (Sumitomo Chemical), Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2013-50 |
Electrical properties of Al2O3 and HfO2/InGaAs metal-oxide-semiconductor (MOS) capacitors with Al, Au and Pd gate electr... [more] | SDM2013-50 pp.33-37 |
| SDM, ED (Workshop) |
2012-06-27 15:45 |
Okinawa | Okinawa Seinen-kaikan | Influence of co-sputtered HfO2-Ti gate dielectric in IZO-based Transparent thin film transistors Jungil Yang, Donghee Lee, Dongkyu Cho, Sanghyun Woo, Yoosung Lim, Sungmin Park, Daekuk Kim, Moonsuk Yi (PNU.) |
Metal-oxide thin film transistors (TFTs) have been fabricated using HfO2 and co-sputtered HfO2–Ti (HfTiO) as gate ... [more] | |
| SDM | 2012-06-21 11:55 |
Aichi | VBL, Nagoya Univ. | Oxygen-induced high-k dielectric degradation in TiN/Hf-based high-k gate stacks Takuji Hosoi, Yuki Odake, Hiroaki Arimura, Keisuke Chikaraishi, Naomu Kitano, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2012-51 |
Effective work function control and equivalent oxide thickness (EOT) scaling are the major concerns for implementing met... [more] | SDM2012-51 pp.43-46 |
| ED, SDM | 2012-02-08 13:25 |
Hokkaido | Charge distribution near interface of high-k gate insulator in CNFETs Kosuke Suzuki, Yutaka Ohno, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) ED2011-156 SDM2011-173 |
We have investigated the interface charges generated at the interfaces of the gate insulator in carbon nanotube field-ef... [more] | ED2011-156 SDM2011-173 pp.83-87 |
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| SDM | 2011-07-04 09:00 |
Aichi | VBL, Nagoya Univ. | High Temperature Annealing with MIPS Structure for Improving Interfacial Property at La-silicate/Si Interface and Achieving Scaled EOT Takamasa Kawanago, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.) SDM2011-50 |
This paper reports our experimental study for further EOT scaling with small interface state density based on controllin... [more] | SDM2011-50 pp.1-5 |
| SDM | 2011-07-04 10:00 |
Aichi | VBL, Nagoya Univ. | Defect analysis of HfO2/In0.53Ga0.47As interface using capacitance-voltage and conductance methods Darius Zade, Ryuji Hosoi, Ahmet Parhat, Kuniyuki Kakushima, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech.) SDM2011-53 |
The changes in electrical characteristics of W/HfO2or La2O3/ In0.53Ga0.47As capacitors by wet chemical treatment before ... [more] | SDM2011-53 pp.17-22 |
| SDM | 2011-07-04 15:40 |
Aichi | VBL, Nagoya Univ. | Hf and La upward diffusion into TiN electrode in TiN/HfLaSiO/SiO2 gate stacks induced by high-temperature annealing and its suppression with MIPS structure Yuki Odake, Hiroaki Arimura, Masayuki Saeki, Keisuke Chikaraishi, Naomu Kitano, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2011-65 |
We investigated Hf and La upward diffusion in TiN/HfLaSiO/SiO2 gate stacks by means of electrical characterization and X... [more] | SDM2011-65 pp.87-92 |
| SDM | 2010-11-11 14:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Comprehensive understanding of oxygen vacancy induced effective work function modulation in high-k/metal gate stacks Takuji Hosoi, Masayuki Saeki, Yuki Kita, Yudai Oku, Hiroaki Arimura, Naomu Kitano (Osaka Univ.), Kenji Shiraishi, Keisaku Yamada (Univ. Tsukuba), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2010-175 |
Effective work function of p-type gate electrodes on Hf-based high-k dielectrics is known to decrease after high tempera... [more] | SDM2010-175 pp.23-28 |
| ED, SDM | 2010-07-02 12:00 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | The Analysis of Temperature Dependency of the Mobility In High-k/Metal Gate MOSFET and the Performance on its CMOS Inverter Takeshi Sasaki, Takuya Imamoto, Tetsuo Endoh (Tohoku Univ.) ED2010-92 SDM2010-93 |
As the integration density and capacitance of semiconductor devices have increased, high-dielectric (High-k) materials h... [more] | ED2010-92 SDM2010-93 pp.177-182 |
| ED, SDM | 2010-07-02 12:45 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET Takuya Imamoto, Takeshi Sasaki, Tetsuo Endoh (Tohoku Univ.) ED2010-95 SDM2010-96 |
In this paper, we compare the 1/f noise characteristics of High-k/Metal Gate MOSFET and SiON/Poly-Si Gate MOSFET by meas... [more] | ED2010-95 SDM2010-96 pp.195-198 |
| SDM | 2010-06-22 13:45 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | High Temperature Rapid Thermal Annealing of Rare-Earth Oxides Dielectrics for Highly Scaled Gate Stack of EOT=0.5 nm Daisuke Kitayama, Tomotsune Koyanagi, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech.) SDM2010-41 |
A direct contact of high-k/Si substrate (without SiO<sub>2</sub> interfacial layer structure) is required for achieving ... [more] | SDM2010-41 pp.43-48 |
| ED | 2010-06-18 11:50 |
Ishikawa | JAIST | Photo corrosion of Metal Gate Electrodes during Wet Daisuke Watanabe (Daikin Industries,Ltd.), Chiharu Kimura, Hidemitsu Aoki (Osaka Univ.) ED2010-46 |
Wet processes for removing high-k film involve the risk of enhanced galvanic corrosion at the gate electrode level. We f... [more] | ED2010-46 pp.69-74 |
| ED, MW | 2010-01-14 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg | InP/InGaAs composite channel MOSFET with Al2O3 gate dielectric Toru Kanazawa, Kazuya Wakabayashi, Hisashi Saito, Ryosuke Terao, Tomonori Tajima, Shunsuke Ikeda, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.) ED2009-181 MW2009-164 |
III-V semiconductor device technology will potentially be combined with the LSI technology to realize circuits with capa... [more] | ED2009-181 MW2009-164 pp.39-42 |
| SDM | 2009-11-13 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Atomic Scale Analysis of the Degradation Mechanism of the Integrity High-k/Metal-gate Interface Caused by the Interaction between Point-Defects and Residual Strain around the Interface Ken Suzuki, Yuta Itoh, Tatsuya Inoue, Hideo Miura (Tohoku Univ.), Hideki Yoshikawa, Keisuke Kobayashi (National Inst. for Materials Science), Seiji Samukawa (Tohoku Univ.) SDM2009-149 |
Control of the interfacial crystallographic structure between a dielectric film and a gate electrode is one of the most ... [more] | SDM2009-149 pp.79-84 |
| SDM | 2009-10-30 15:15 |
Miyagi | Tohoku University | Oxy-nitridation Simulation of Silicon Surface Using Antomated System of Ultra-Accelerated Quantum Chemical Molecular Dynamics Method Hideyuki Tsuboi, Ai Suzuki, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.) SDM2009-133 |
Using our newly developed automated system of ultra-accelerated quantum chemical molecular dynamics method, we have inve... [more] | SDM2009-133 pp.75-76 |
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