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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, MWPTHz | 2023-12-22 14:20 |
Miyagi | RIEC, Tohoku Univ. (Primary: On-site, Secondary: Online) |
MOCVD growth and device characteristics of N-polar GaN HEMT with high-resistivity C-doped GaN buffer Yuki Yoshiya, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Fumito Nakajima (NTT)  ED2023-63 MWPTHz2023-73 |
MOCVD-grown N-polar GaN HEMTs with high-resistivity carbon-doped GaN buffer were fabricated. Carbon auto doping in buffe... [more] | ED2023-63 MWPTHz2023-73 pp.46-51 |
| CCS | 2023-11-11 16:25 |
Toyama | Toyama Prefectural University | Characteristics of Vertical Handover Count Based on Sojourn Time Threshold Considering User Mobility Speed Kenta Fukuhara, Sumiko Miyata (SIT) CCS2023-31 |
The proliferation of smartphones in recent years, along with the increasing number of applications, has given rise to a ... [more] | CCS2023-31 pp.37-42 |
| MW, ED | 2023-01-27 13:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
Demonstration of high current and high voltage E-mode operation in EID AlGaN/GaN MOS-HEMT Takuma Nanjo, Tomohiro Shinagawa, Tatsuro Watahiki, Naruhisa Miura, Masayuki Furuhashi, Kazuyasu Nishikawa (Mitsubishi Electric), Takashi Egawa (NITech) ED2022-93 MW2022-152 |
(To be available after the conference date) [more] | ED2022-93 MW2022-152 pp.36-39 |
| ED, MWPTHz | 2022-12-19 16:05 |
Miyagi | [Invited Talk]
InP-HEMT Fabrication Process Technology for Beyond 5G Wireless Network with Tera-Hertz Band Takuya Tsutsumi, Hiroshi Hamada, Teruo Jyo, Hiroki Sugiyama, Taro Sasaki, Hiroyuki Takahashi, Fumito Nakajima (NTT) ED2022-76 MWPTHz2022-47 |
Next-generation "Beyond 5G (B5G) / 6G" wireless network systems have been researched and developed for meeting with rapi... [more] | ED2022-76 MWPTHz2022-47 pp.23-27 |
|
| AP, SANE, SAT (Joint) |
2022-07-28 09:25 |
Hokkaido | Asahikawa Taisetsu Crystal Hall (Primary: On-site, Secondary: Online) |
A Study on Transmission Power Control for Efficient Two-Way Relay Communication with High-Altitude Platform Station in Space-Air-Ground Integrated Networks Masaki Takahashi, Yuichi Kawamoto, Nei Kato (Tohoku Univ.) SAT2022-21 |
Space-air-ground integrated networks (SAGINs) are going to be a key technology of 6G for achieving the goal of global an... [more] | SAT2022-21 pp.24-29 |
| RCS | 2022-06-17 09:30 |
Okinawa | University of the Ryukyus, Senbaru Campus and online (Primary: On-site, Secondary: Online) |
A study on Joint Channel and Data Estimation via Parametric Bilinear Inference for OTFS Transmission Kengo Furuta, Kenta Ito, Takumi Takahashi (Osaka Univ), Shinsuke Ibi (Doshisha Univ), Seiichi Sampei (Osaka Univ) RCS2022-56 |
In high-speed mobile communication environments, an orthogonal time frequency space (OTFS) scheme with robustness to dou... [more] | RCS2022-56 pp.188-193 |
| RCS, SR, SRW (Joint) |
2021-03-05 10:30 |
Online | Online | Performance Evaluation of Base Station Cooperation Technologies in Millimeter-Wave Bands at Variable Base Station Deployments under High-Mobility Environments Tatsuki Okuyama, Satoshi Suyama, Nobuhide Nonaka, Takahiro Asai (NTT DOCOMO) RCS2020-249 |
Commercial services of 5th generation mobile communication system (5G) are expanding. In 5G, Massive MIMO -based beamfor... [more] | RCS2020-249 pp.207-211 |
| MW, ED | 2021-01-29 13:00 |
Online | Online | DC Characteristics and MOS Interface properties of HfSiOx-gate AlGaN/GaN HEMTs Ryota Ochi (Hokkaido Univ.), Erika Maeda (SIT/NIMS), Toshihide Nabatame (NIMS), Koji Shiozaki (IMaSS), Tamotsu Hashizume (Hokkaido Univ/IMaSS) ED2020-31 MW2020-84 |
GaN high-electron-mobility transistors (HEMTs) are very attractive for the fifth generation communication system. To bui... [more] | ED2020-31 MW2020-84 pp.22-25 |
| LQE, CPM, ED | 2020-11-26 15:30 |
Online | Online | Enhanced Breakdown Voltage in AlGaN/GaN HEMTs by Oxygen Plasma Treatment Shunsuke Kamiya, Takashi Nishitani, Yu Matsuda, Nozomu Takano, Joel T. Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.) ED2020-12 CPM2020-33 LQE2020-63 |
With its high critical electric field as consequence of its wide bandgap, gallium nitride (GaN) is considered a leading ... [more] | ED2020-12 CPM2020-33 LQE2020-63 pp.45-48 |
| LQE, CPM, ED | 2020-11-27 11:20 |
Online | Online | Improved performance in GaN-based HEMTs with insulated gate structures Ali Baratov, Takashi Ozawa, Shunpei Yamashita, Joel T. Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.) ED2020-16 CPM2020-37 LQE2020-67 |
Several groups have reported improved performance in GaN-based transistors employing metal-insulator-semiconductor (MIS)... [more] | ED2020-16 CPM2020-37 LQE2020-67 pp.60-62 |
| MWP | 2020-05-28 13:30 |
Online | Online | [Invited Talk]
Fabrication Process of InP-HEMT-based Sub-millimeter Wave ICs for Beyond 5G Application Takuya Tsutsumi, Hiroki Sugiyama, Hiroshi Hamada, Hideyuki Nosaka, Hideaki Matsuzaki (NTT) MWP2020-1 |
The 300-GHz sub-millimeter-wave band is one of the candidate frequency for “Beyond 5G” networks to meet rapidly increasi... [more] | MWP2020-1 pp.1-6 |
| RCS, SR, SRW (Joint) |
2020-03-06 09:00 |
Tokyo | Tokyo Institute of Technology (Cancelled but technical report was issued) |
Millimeter-Wave Base Station Cooperation Technologies in High-Mobility Environments Tatsuki Okuyama, Satoshi Suyama, Nobuhide Nonaka, Yukihiko Okumura, Takahiro Asai (NTT DOCOMO) RCS2019-383 |
Commercial services in 5G have already started all over the world. The initial 5G introduces analog beamforming (BF) by ... [more] | RCS2019-383 pp.323-328 |
| ED, THz [detail] | 2019-12-23 16:20 |
Miyagi | InP Wafer-level Backside Process for Future Tera-hertz Operation Takuya Tsutsumi, Hiroshi Hamada, Hiroki Sugiyama, Hideyuki Nosaka, Hideaki Matsuzaki (NTT) ED2019-82 |
The sub-millimeter-wave band would be utilized in future mobile networks to cope with increasing data rates. InP-based S... [more] | ED2019-82 pp.23-28 |
|
| ED, THz [detail] | 2019-12-23 16:45 |
Miyagi | GaInSb n-Channel HEMTs Using Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer Koki Osawa, Takuya Iwaki, Yuki Endoh, Mizuho Hiraoka, Naoyuki Kishimoto, Takuya Hayashi (TUS), Issei Watanabe (NICT/TUS), Yoshimi Yamashita, Shinsuke Hara, Takahiro Gotow, Akifumi Kasamatsu (NICT), Akira Endoh, Hiroki Fujishiro (TUS) ED2019-83 |
We succeeded in fabricating GaInSb n-channel HEMTs for the first time in the world and measured their characteristics. W... [more] | ED2019-83 pp.29-32 |
|
| NS, RCS (Joint) |
2019-12-19 15:15 |
Tokushima | Tokushima Univ. | [Invited Lecture]
Radio Access Network Exploiting Higher Frequency Bands for 5G Evolution and Beyond Satoshi Suyama, Tatsuki Okuyama, Nobuhide Nonaka, Takahiro Asai, Yukihiko Okumura (NTT DOCOMO) NS2019-145 RCS2019-248 |
A commercial service in fifth-generation (5G) mobile communication system will finally start from spring in 2020 by usin... [more] | NS2019-145 RCS2019-248 p.61 |
| NS, RCS (Joint) |
2019-12-20 14:55 |
Tokushima | Tokushima Univ. | 28GHz Band 5G Experimental Trial in High Mobility Environment Using the Shinkansen Nopbuhide Nonaka, Kazushi Muraoka, Tatsuki Okuyama, Satoshi Suyama, Yukihiko Okumura, Takahiro Asai (NTT DOCOMO), Yoshihiro Matsumura (JR Central) RCS2019-264 |
Commercial services in fifth-generation (5G) mobile communication system will start by using 3.7 GHz, 4.5 GHz, and 28 GH... [more] | RCS2019-264 pp.145-150 |
| RCS | 2019-06-20 16:15 |
Okinawa | Miyakojima Hirara Port Terminal Building | [Invited Lecture]
Performance evaluation on 5G mobile wireless communications in high speed train environment Juho Park, Junghoon Lee, JunHwan Lee (ETRI) RCS2019-79 |
To cope with the ever-increasing mobile data demand and diversifying service requirements, challenges for designing 5G w... [more] | RCS2019-79 p.255 |
| RCS | 2019-04-18 11:20 |
Hokkaido | Noboribetsu Grand Hotel | 28 GHz-Band Experimental Trial of Downlink Massive MIMO in Urban Railway Environment Kazushi Muraoka, Nobuhide Nonaka, Yuta Takahashi, Tatsuki Okuyama, Jun Mashino, Satoshi Suyama, Yukihiko Okumura (NTT DOCOMO) RCS2019-5 |
Field trials of the fifth-generation (5G) mobile communication system using 28 GHz band at which 400 MHz band will be av... [more] | RCS2019-5 pp.23-28 |
| OME, IEE-DEI | 2019-01-22 13:00 |
Aichi | Island Hotel URASHIMA(Himaka-jima) | [Invited Talk]
Organic Solar Cells Using High Mobility Organic Semiconductors Masahiro Hiramoto, Seiichiro Izawa (IMS) OME2018-36 |
Lateral alternating donor/acceptor multilayered junction for organic solar cells and open-circuit voltage reaching Shock... [more] | OME2018-36 pp.1-4 |
| ED, THz | 2018-12-18 09:00 |
Miyagi | RIEC, Tohoku Univ. | [Invited Talk]
High-Speed Performance of InP-, Sb- and GaN-based HEMTs Akira Endoh, Issei Watanabe, Yoshimi Yamashita, Akifumi Kasamatsu (NICT), Hiroki Fujishiro (Tokyo Univ. of Science), Takashi Mimura (NICT) ED2018-62 |
We have fabricated nanometer-scale InP-, Sb- and GaN-based HEMTs by using electron beam lithography and measured their c... [more] | ED2018-62 pp.35-38 |
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