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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| VLD, DC, CPSY, RECONF, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC (Joint) [detail] |
2019-11-15 16:10 |
Ehime | Ehime Prefecture Gender Equality Center | A 16 Gb/s Differential Transmitter With Far-End Crosstalk Cancellation Using Injection Timing Control Daigo Takahashi (The Univ. of Tokyo), Yusuke Fujita, Satoshi Miura (THine Electronics), Tetsuya Iizuka (The Univ. of Tokyo)  ICD2019-42 IE2019-48 |
This paper proposes a far-end crosstalk cancellation (FEXT) method with adjustable injection timing of the crosstalk can... [more] | ICD2019-42 IE2019-48 pp.65-70 |
| MW, ED | 2019-01-18 11:05 |
Tokyo | Hitachi, Central Research Lab. | Investigation of the Pulsed-IV Degradation Mechanism of GaN-HEMT under High Temperature Storage Tests Yasunori Tateno (Sumitomo Electric), Yasuyo Kurachi (Sumitomo Electric Device Innovations), Hiroshi Yamamoto, Takashi Nakabayashi (Sumitomo Electric) ED2018-82 MW2018-149 |
The purpose of this study is to investigate the physical mechanism of pulsed-IV degradation under high temperature stora... [more] | ED2018-82 MW2018-149 pp.71-74 |
| VLD, HWS (Joint) |
2018-02-28 16:55 |
Okinawa | Okinawa Seinen Kaikan | Reliability Evaluation of Mixed Error Correction Scheme for Soft-Error Tolerant Datapaths Junghoon Oh, Mineo Kaneko (JAIST) VLD2017-102 |
Among several problems with miniaturization of LSIs, soft-errors are one of serious problems to make reliability worse. ... [more] | VLD2017-102 pp.79-84 |
| SDM | 2015-11-06 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
GaN-based devices on Si substrates for power conversion systems Hidetoshi Ishida, Masahiro Ishida, Tetsuzo Ueda (Panasonic) SDM2015-90 |
GaN-based power devices have been expected to overcome the performance limit of conventional Si-based devices and enable... [more] | SDM2015-90 pp.35-38 |
| SDM, EID | 2014-12-12 16:45 |
Kyoto | Kyoto University | Temperature Dependence of Current Gain in 4H-SiC BJTs Satoshi Asada, Takafumi Okuda, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.) EID2014-35 SDM2014-130 |
Temperature dependence of current gain from 140 to 460 K in a 4H-SiC bipolar junction transistor (SiC BJT) was investiga... [more] | EID2014-35 SDM2014-130 pp.115-118 |
| LQE, OPE | 2013-06-21 15:15 |
Tokyo | Push-Pull Modulation of Transverse Coupled-Cavity VCSELs Hamed Dalir, Fumio Koyama (Tokyo Inst. of Tech.) OPE2013-13 LQE2013-23 |
We propose the lateral coupled cavity VCSEL by using a bow-tie connection for enhancing the modulation bandwidth. Two ox... [more] | OPE2013-13 LQE2013-23 pp.33-38 |
|
| SCE | 2013-01-24 13:35 |
Okayama | Okayama Univ. | Development of HTS-SQUID hybrid magnetometer Akira Tsukamoto, Seiji Adachi, Yasuo Oshikubo, Tsunehiro Hato, Keiichi Tanabe (ISTEC-SRL) SCE2012-33 |
To improve the field resolution of a magnetometer for use in the Earth’s field, we have developed a new magnetometer usi... [more] | SCE2012-33 pp.49-52 |
| MW | 2010-11-26 13:50 |
Okinawa | Tiruru | A Study on Efficiency Improvement for L-band 10W GaN HEMT Power Amplifier with Harmonic Injection Kenichi Fujii, Kousaku Tsujioka (WTI), Tadashi Takagi (Tohoku Univ.) MW2010-121 |
An experimental study of efficiency improvement by 2nd and 3rd harmonic injection has been done for L band 10W GaN HEMT ... [more] | MW2010-121 pp.93-98 |
| OPE, EMT, LQE, PN, IEE-EMT | 2010-01-28 18:05 |
Kyoto | Optical Injection Locking of Distributed Reflector Lasers with Wirelike Active Regions SeungHun Lee (Tokyo Inst. of Tech.), Devang Parekh (Univ. of California), Takahiko Shindo (Tokyo Inst. of Tech.), Weijian Yang, Peng Guo (Univ. of California), Daisuke Takahashi, Noriaki Tajima, Nobuhiko Nishiyama (Tokyo Inst. of Tech.), Connie J. Chang-Hasnain (Univ. of California), Shigehisa Arai (Tokyo Inst. of Tech.) PN2009-49 OPE2009-187 LQE2009-169 |
Modulation bandwidth enhancement of Distributed reflector (DR) lasers with wirelike active regions has been demonstrated... [more] | PN2009-49 OPE2009-187 LQE2009-169 pp.75-80 |
|
| OPE, EMT, LQE, PN, IEE-EMT | 2010-01-29 16:40 |
Kyoto | Numerical Analysis of Dynamic Mechanism and Device Characteristics of Tunnel Injection SOA Mikio Sorimachi, Yasutaka Higa, Shinya Matsuzaki, Tomoyuki Miyamoto (Tokyo Inst. of Tech.) PN2009-64 OPE2009-202 LQE2009-184 |
Semiconductor optical amplifier with a tunnel injection (TI-SOA) has carrier reservoir provides the carrier reduced by s... [more] | PN2009-64 OPE2009-202 LQE2009-184 pp.155-160 |
|
| OPE, EMT, MW | 2008-07-25 11:40 |
Hokkaido | A Study on Temperature Distribution of a Wave Absorber Composed of Parallel Resistive Films under High Power Injection Eriko Watanabe, Shinya Watanabe, Osamu Hashimoto (Aoyama Gakuin Univ.), Toshifumi Saito, Hiroshi Kurihara (TDK) MW2008-78 OPE2008-61 |
In this research, the temperature distribution of a wave Absorber composed of parallel resistive films under high-power ... [more] | MW2008-78 OPE2008-61 pp.175-179 |
|
| LQE | 2007-12-07 11:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Theoretical Analysis of Carrier Injection Rate and Recombination Rate in Tunnel Injection Quantum Well Lasers Yasutaka Higa, Tomoyuki Miyamoto, Hiroshi Nakajima, Kosuke Fujimoto, Fumio Koyama (Tokyo Inst. of Tech.) LQE2007-116 |
Carrier injection rate in tunnel injection quantum well structure was investigated thorough theoretical analysis. Tunnel... [more] | LQE2007-116 pp.15-20 |
| ED | 2007-11-27 17:20 |
Miyagi | Tohoku Univ. Research Institute of Electrical Communication | Emission of terahertz electromagnetic radiation from a 2-dimensional plasmon-resonant emitter of a HEMT structure Hiroyuki Handa, Yohei Hosono, Hiroki Tsuda, Yahya Moubarak Meziani, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2007-195 |
We have fabricated the 2D plasmon resonant emitter which contains double grating gate structure and estimated its emissi... [more] | ED2007-195 pp.45-50 |
| MW, ED | 2007-01-19 14:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A Normally-off AlGaN/GaN Transistor with Low On-State Resistance Using Hole-Injection Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno, Hisayoshi Matsuo, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) |
We report a normally-off GaN-based transistor using conductivity modulation, which we call GIT (Gate Injection Transisto... [more] | ED2006-235 MW2006-188 pp.193-197 |
| LQE, PN, OPE, OFT, EMT | 2006-01-31 13:25 |
Hyogo | Kobe Univ. | High-speed optical switching of InAlGaAs/InAlAs multi-mode interference photonic switch with partial index-modulation region(MIPS-P) Tomohiro Ishikawa, Shingo Kumai, Atsuki Okazaki, Katsuyuki Utaka (Waseda Univ.), Hidetaka Amanai, Kaori Kurihara, Kenji Shimoyama (Mitsubishi Chemical Corp.) |
Optical packet switching is expected in advanced photonic networks, and optical switches used in these systems are requi... [more] | PN2005-63 OFT2005-50 OPE2005-111 LQE2005-126 pp.7-10 |
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