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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, MWPTHz | 2022-12-19 16:05 |
Miyagi | [Invited Talk]
InP-HEMT Fabrication Process Technology for Beyond 5G Wireless Network with Tera-Hertz Band Takuya Tsutsumi, Hiroshi Hamada, Teruo Jyo, Hiroki Sugiyama, Taro Sasaki, Hiroyuki Takahashi, Fumito Nakajima (NTT)  ED2022-76 MWPTHz2022-47 |
Next-generation "Beyond 5G (B5G) / 6G" wireless network systems have been researched and developed for meeting with rapi... [more] | ED2022-76 MWPTHz2022-47 pp.23-27 |
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| MW, ED | 2021-01-29 13:00 |
Online | Online | DC Characteristics and MOS Interface properties of HfSiOx-gate AlGaN/GaN HEMTs Ryota Ochi (Hokkaido Univ.), Erika Maeda (SIT/NIMS), Toshihide Nabatame (NIMS), Koji Shiozaki (IMaSS), Tamotsu Hashizume (Hokkaido Univ/IMaSS) ED2020-31 MW2020-84 |
GaN high-electron-mobility transistors (HEMTs) are very attractive for the fifth generation communication system. To bui... [more] | ED2020-31 MW2020-84 pp.22-25 |
| LQE, CPM, ED | 2020-11-26 15:30 |
Online | Online | Enhanced Breakdown Voltage in AlGaN/GaN HEMTs by Oxygen Plasma Treatment Shunsuke Kamiya, Takashi Nishitani, Yu Matsuda, Nozomu Takano, Joel T. Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.) ED2020-12 CPM2020-33 LQE2020-63 |
With its high critical electric field as consequence of its wide bandgap, gallium nitride (GaN) is considered a leading ... [more] | ED2020-12 CPM2020-33 LQE2020-63 pp.45-48 |
| ED, THz [detail] | 2019-12-23 16:20 |
Miyagi | InP Wafer-level Backside Process for Future Tera-hertz Operation Takuya Tsutsumi, Hiroshi Hamada, Hiroki Sugiyama, Hideyuki Nosaka, Hideaki Matsuzaki (NTT) ED2019-82 |
The sub-millimeter-wave band would be utilized in future mobile networks to cope with increasing data rates. InP-based S... [more] | ED2019-82 pp.23-28 |
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| MW, ED | 2013-01-18 14:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | AlGaN/GaN MIS-Gate HEMTs with SiCN Gate Stacks Kengo Kobayashi, Tomohiro Yoshida, Taiichi Otsuji, Ryuji Katayama, Takashi Matsuoka, Tetsuya Suemitsu (Tohoku Univ.) ED2012-126 MW2012-156 |
This paper reports AlGaN/GaN metal-insulator-semiconductor (MIS)-gate high electron mobility transistors (HEMTs) with a ... [more] | ED2012-126 MW2012-156 pp.75-78 |
| ED | 2007-11-27 13:30 |
Miyagi | Tohoku Univ. Research Institute of Electrical Communication | Research on SiGe/Si HEMT for millimeter-wave band operation Norio Onojima, Akifumi Kasamatsu, Nobumitsu Hirose, Takashi Mimura, Toshiaki Matsui (NICT) ED2007-187 |
We have fabricated sub-100-nm-gate-length SiGe/Si high electron mobility transistors (HEMTs) toward ultra-high-speed Si-... [more] | ED2007-187 pp.1-5 |
| CPM, ED, LQE | 2007-10-12 12:05 |
Fukui | Fukui Univ. | Ku-band AlGaN/GaN HEMTs with 50W Output Power Yasushi Kashiwabara, Shigenori Takagi, Kazutoshi Masuda, Keiichi Matsushita, Ken Onodera, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba) ED2007-172 CPM2007-98 LQE2007-73 |
AlGaN/GaN High Electron Mobility Transistors (HEMTs) were developed for Ku-band applications. The operating voltage and... [more] | ED2007-172 CPM2007-98 LQE2007-73 pp.81-84 |
| ED, CPM, LQE | 2006-10-05 13:00 |
Kyoto | X-band AlGaN/GaN HEMT with over 40W Output Power Yasushi Kashiwabara, Kazutoshi Masuda, Keiichi Matsushita, Hiroyuki Sakurai, Shinji Takatsuka, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba corp.) |
AlGaN/GaN High Electron Mobility Transistors (HEMTs) were developed for X-band applications. The operating voltage and ... [more] | ED2006-152 CPM2006-89 LQE2006-56 pp.1-5 |
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