Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, MWPTHz |
2023-12-22 14:20 |
Miyagi |
RIEC, Tohoku Univ. (Primary: On-site, Secondary: Online) |
MOCVD growth and device characteristics of N-polar GaN HEMT with high-resistivity C-doped GaN buffer Yuki Yoshiya, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Fumito Nakajima (NTT) ED2023-63 MWPTHz2023-73 |
MOCVD-grown N-polar GaN HEMTs with high-resistivity carbon-doped GaN buffer were fabricated. Carbon auto doping in buffe... [more] |
ED2023-63 MWPTHz2023-73 pp.46-51 |
OPE, LQE, OCS |
2022-05-13 16:05 |
Online |
Online |
[Special Invited Talk]
Energy efficient optoelectronic conversion and its applications to photonic integrated systems Akihiko Shinya, Kengo Nozaki, Shota Kita (NTT), Tohru Ishihara (Nagoya Univ.), Shinji Matsuo, Masaya Notomi (NTT) OCS2022-7 OPE2022-7 LQE2022-7 |
(To be available after the conference date) [more] |
OCS2022-7 OPE2022-7 LQE2022-7 pp.26-29 |
SDM |
2020-10-22 10:50 |
Online |
Online |
High capacitance density high breakdown voltage textured deep trench SiN capacitors toward 3D integration Koga Saito, Ayano Yoshida, Rihito Kuroda (Tohoku Univ.), Hiroshi Shibata, Taku Shibaguchi, Naoya kuriyama (LAPIS Semiconductor Miyagi), Shigetoshi Sugawa (Tohoku Univ.) SDM2020-15 |
High capacitance density and High breakdown voltage textured deep trench SiN capacitors are presented. The developed cap... [more] |
SDM2020-15 pp.7-11 |
WPT, EE (Joint) |
2020-10-07 15:55 |
Online |
Online |
Wireless Power Transfer for Waterway-Cruising Ships with 3 Electrodes Tomohiro Tsujimura, Yangjun Zhang (Ryukoku Univ.), Ikuo Awai (Ryutech corp.) WPT2020-24 |
The feature of high dielectric constant of water can be expected to have the effect of strengthening the coupling in an ... [more] |
WPT2020-24 pp.30-35 |
MW (2nd) |
2020-05-13 - 2020-05-15 |
Overseas |
CU, Bangkok, Thailand (Postponed) |
Analysis and Fabrication of Rectenna with SOI-MOSFET Diode and High Impedance Antenna for RF Energy Harvesting Keisuke Kawano, Yasunori Tsuchiya, Jiro Ida, Takayuki Mori (Kanazawa Inst of Tech) |
We analyzed and fabricated the rectenna with combination of the SOI-MOSFET diode and the high impedance antenna for the ... [more] |
|
WPT, EE (Joint) |
2019-10-10 11:10 |
Shiga |
Ryukoku Extension Center, Ryukoku University |
Possibility of Wireless Power Transfer by Use of Confined Water Ikuo Awai (Ryutech) WPT2019-37 |
Confined water in some container could be used for wireless power transfer due to its high permittivity and existence fo... [more] |
WPT2019-37 pp.59-62 |
EMCJ, IEE-EMC, IEE-MAG |
2018-11-22 13:40 |
Overseas |
KAIST |
Power Distribution Network (PDN) Modeling of the Perforated Planes in A Silicon Interposer for High Bandwidth Memory (HBM) Kyungjun Cho, Youngwoo Kim, Subin Kim, Hyunwook Park, Junyong Park, Seongsoo Lee, Joungho Kim (KAIST) EMCJ2018-62 |
In this paper, we first propose models of the power distribution network (PDN) of perforated power and ground (P/G) plan... [more] |
EMCJ2018-62 p.21 |
MW (2nd) |
2018-06-27 - 2018-06-29 |
Overseas |
KMITL, Bangkok, Thailand |
High Efficiency Rectenna Design with High Impedance Antenna and SOI-MOSFET Connected Diode for RF Energy Harvesting Yasunori Tsuchiya, Jiro Ida, Takayuki Mori, Takuya Yamada, Shun Momose, Keisuke Noguchi, Kenji Itoh (KIT) |
The rectification efficiency of the rectenna were simulated with the high impedance (Hi-Z) antenna and the SOI MOSFET co... [more] |
|
EMD, R |
2018-02-16 15:00 |
Mie |
Sumitomo Wiring Systems |
Simultaneous Observation of Break Arcs from Two Directions by High Speed Cameras when a 48VDC/270A resistive circuit is interrupted Ryuichi Takano, Junya Sekikawa (Shizuoka Univ.) R2017-64 EMD2017-56 |
Break arcs are occurred by using an experimental equipment for breaking a 48VDC/270A high-current circuit and photograph... [more] |
R2017-64 EMD2017-56 pp.19-23 |
EMCJ |
2017-11-22 13:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Magnetic Near-Field Noise Measurement and Improvement of Power Efficiency of LED Bulb without Switching Circuit Shunsuke Koyanagi (Akita Univ.), Katsutoshi Saito (Saikatu), Motoshi Tanaka (Akita Univ.) EMCJ2017-68 |
A low-noise LED bulb is required for an anechoic chamber and a measurement room of biomedical signals. Magnetic near-fie... [more] |
EMCJ2017-68 pp.23-28 |
EMD |
2017-10-20 14:10 |
Yamanashi |
Kofu-shi-Shoukoukaigisyo (Kofu) |
Measurement of temporal variation in micro gap length at the beginning of opening electrodes
-- Varying capacitance measurement between the gaps by high-frequency voltage application -- Masao Shibayama, Yasunori Tanaka, Tatsuo Ishijima, Yoshihiko Uesugi (Kanazawa Univ.) EMD2017-40 |
A method was studied to measure time variation in micro gap length at the beginning of opening electrodes. Measurement g... [more] |
EMD2017-40 pp.13-18 |
ASN, MoNA, MICT (Joint) |
2017-01-19 11:20 |
Oita |
|
Transcutaneous Energy Transmission System for Artificial Heart using Spider coils
-- Investigation of ratio between inner and outer diameter ratio of coils to improve coupling factor -- Shintaro Maeda, Dairoku Muramatsu, Takahiko Yamamoto, Kohji Koshiji (Tokyo Univ. of Science) MICT2016-64 |
Transcutaneous energy transmission which supply energy to an implantable artificial heart is required for the viewpoint ... [more] |
MICT2016-64 pp.13-16 |
ICD, CPSY |
2016-12-15 15:30 |
Tokyo |
Tokyo Institute of Technology |
[Poster Presentation]
CMOS Transimpedance Analog Front End Circuit for an Optical Probe Current Sensor Kousuke Oyangi, Kousuke Miyaji (Shinshu Univ.) ICD2016-74 CPSY2016-80 |
An optical probe current sensor using the magneto-optical effect has been studied for power electronics. This sensor sho... [more] |
ICD2016-74 CPSY2016-80 p.67 |
ED |
2016-01-20 13:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Lecture]
The unique features of GaN power devices and the technologies to utilize their innate advantages Ken Nakahara, Kentaro Chikamatsu, Atsushi Yamaguchi, Naotaka Kuroda (ROHM) ED2015-115 |
The GaN power device have a very low value of RonQg as a figure of merit for power devices, where Ron denotes on-state r... [more] |
ED2015-115 pp.19-24 |
SDM |
2015-06-19 15:15 |
Aichi |
VBL, Nagoya Univ. |
Electrical properties of GIZO TFT with ultrathin Al2O3 insulators by PE-ALD method Kazunori Kurishima (Meiji Univ./NIMS), Toshihide Nabatame, Kazuhito Tsukagoshi, Akihiko Ohi, Toyohiro Chikyow (NIMS), Atsushi Ogura (Meiji Univ.) SDM2015-51 |
To investigate the influence of an Al2O3 layer on the electrical properties of Ga-In-Zn-O (GIZO) thin-film transistors (... [more] |
SDM2015-51 pp.69-73 |
ICD, CPSY |
2014-12-01 15:15 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Poster Presentation]
Investigation of Frequency Characteristic of High Linearity Gm-Cell with Level Shifter Tohru Kaneko, Shinya Yokomizo, Masaya Miyahara, Akira Matsuzawa (Tokyo Tech.) ICD2014-96 CPSY2014-108 |
High speed Gm-C filter requires high speed and high linearity Gm-cell like a flipped voltage follower; however it has po... [more] |
ICD2014-96 CPSY2014-108 pp.79-84 |
SDM |
2014-10-16 16:00 |
Miyagi |
Niche, Tohoku Univ. |
Electrical characteristics of as-deposited HfN gate insulator formed by ECR plasma sputtering Nithi Atthi, Shun-ichiro Ohmi (TokyoTech) SDM2014-87 |
In this paper, the electrical characteristics of as-deposited HfN high- gate insulator formed by electron-cyclot... [more] |
SDM2014-87 pp.19-22 |
ICD, ITE-IST |
2014-07-03 10:25 |
Shimane |
Izumo-shi (Shimane) |
Design of 1mm-Pitch 80x80-Channel 322Hz-Frame-Rate Touch Sensor with Two-Step Dual-Mode Capacitance Scan Noriyuki Miura (Kobe Univ.), Shiro Dosho (Panasonic), Daisuke Fujimoto, Takuya Kiriyama (Kobe Univ.), Hiroyuki Tezuka, Takuji Miki (Panasonic), Makoto Nagata (Kobe Univ.) ICD2014-20 |
A 1mm-pitch 80x80-channel 322Hz-frame-rate capacitive touch sensor has been developed. Multiple touch points are detecte... [more] |
ICD2014-20 pp.7-12 |
ICD |
2014-01-28 15:00 |
Kyoto |
Kyoto Univ. Tokeidai Kinenkan |
[Poster Presentation]
Phase compensation technique for low-noise small-area three-stage opamp Hicham Haibi, Ippei Akita, Makoto Ishida (Toyohashi Univ. of Tech.) ICD2013-111 |
In this paper we present a low-noise small-area three-stage operational amplifier for biomedical arrayed sensors. Recent... [more] |
ICD2013-111 p.29 |
SDM |
2013-06-18 11:15 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks Chih-Yu Chang, Masafumi Yokoyama, Sang-Hyeon Kim (Univ. of Tokyo), Osamu Ichikawa, Takenori Osada, Masahiko Hata (Sumitomo Chemical), Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2013-50 |
Electrical properties of Al2O3 and HfO2/InGaAs metal-oxide-semiconductor (MOS) capacitors with Al, Au and Pd gate electr... [more] |
SDM2013-50 pp.33-37 |