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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 40  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, MWPTHz 2023-12-22
14:20
Miyagi RIEC, Tohoku Univ.
(Primary: On-site, Secondary: Online)
MOCVD growth and device characteristics of N-polar GaN HEMT with high-resistivity C-doped GaN buffer
Yuki Yoshiya, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Fumito Nakajima (NTT) ED2023-63 MWPTHz2023-73
MOCVD-grown N-polar GaN HEMTs with high-resistivity carbon-doped GaN buffer were fabricated. Carbon auto doping in buffe... [more] ED2023-63 MWPTHz2023-73
pp.46-51
OPE, LQE, OCS 2022-05-13
16:05
Online Online [Special Invited Talk] Energy efficient optoelectronic conversion and its applications to photonic integrated systems
Akihiko Shinya, Kengo Nozaki, Shota Kita (NTT), Tohru Ishihara (Nagoya Univ.), Shinji Matsuo, Masaya Notomi (NTT) OCS2022-7 OPE2022-7 LQE2022-7
(To be available after the conference date) [more] OCS2022-7 OPE2022-7 LQE2022-7
pp.26-29
SDM 2020-10-22
10:50
Online Online High capacitance density high breakdown voltage textured deep trench SiN capacitors toward 3D integration
Koga Saito, Ayano Yoshida, Rihito Kuroda (Tohoku Univ.), Hiroshi Shibata, Taku Shibaguchi, Naoya kuriyama (LAPIS Semiconductor Miyagi), Shigetoshi Sugawa (Tohoku Univ.) SDM2020-15
High capacitance density and High breakdown voltage textured deep trench SiN capacitors are presented. The developed cap... [more] SDM2020-15
pp.7-11
WPT, EE
(Joint)
2020-10-07
15:55
Online Online Wireless Power Transfer for Waterway-Cruising Ships with 3 Electrodes
Tomohiro Tsujimura, Yangjun Zhang (Ryukoku Univ.), Ikuo Awai (Ryutech corp.) WPT2020-24
The feature of high dielectric constant of water can be expected to have the effect of strengthening the coupling in an ... [more] WPT2020-24
pp.30-35
MW
(2nd)
2020-05-13
- 2020-05-15
Overseas CU, Bangkok, Thailand
(Postponed)
Analysis and Fabrication of Rectenna with SOI-MOSFET Diode and High Impedance Antenna for RF Energy Harvesting
Keisuke Kawano, Yasunori Tsuchiya, Jiro Ida, Takayuki Mori (Kanazawa Inst of Tech)
We analyzed and fabricated the rectenna with combination of the SOI-MOSFET diode and the high impedance antenna for the ... [more]
WPT, EE
(Joint)
2019-10-10
11:10
Shiga Ryukoku Extension Center, Ryukoku University Possibility of Wireless Power Transfer by Use of Confined Water
Ikuo Awai (Ryutech) WPT2019-37
Confined water in some container could be used for wireless power transfer due to its high permittivity and existence fo... [more] WPT2019-37
pp.59-62
EMCJ, IEE-EMC, IEE-MAG 2018-11-22
13:40
Overseas KAIST Power Distribution Network (PDN) Modeling of the Perforated Planes in A Silicon Interposer for High Bandwidth Memory (HBM)
Kyungjun Cho, Youngwoo Kim, Subin Kim, Hyunwook Park, Junyong Park, Seongsoo Lee, Joungho Kim (KAIST) EMCJ2018-62
In this paper, we first propose models of the power distribution network (PDN) of perforated power and ground (P/G) plan... [more] EMCJ2018-62
p.21
MW
(2nd)
2018-06-27
- 2018-06-29
Overseas KMITL, Bangkok, Thailand High Efficiency Rectenna Design with High Impedance Antenna and SOI-MOSFET Connected Diode for RF Energy Harvesting
Yasunori Tsuchiya, Jiro Ida, Takayuki Mori, Takuya Yamada, Shun Momose, Keisuke Noguchi, Kenji Itoh (KIT)
The rectification efficiency of the rectenna were simulated with the high impedance (Hi-Z) antenna and the SOI MOSFET co... [more]
EMD, R 2018-02-16
15:00
Mie Sumitomo Wiring Systems Simultaneous Observation of Break Arcs from Two Directions by High Speed Cameras when a 48VDC/270A resistive circuit is interrupted
Ryuichi Takano, Junya Sekikawa (Shizuoka Univ.) R2017-64 EMD2017-56
Break arcs are occurred by using an experimental equipment for breaking a 48VDC/270A high-current circuit and photograph... [more] R2017-64 EMD2017-56
pp.19-23
EMCJ 2017-11-22
13:00
Tokyo Kikai-Shinko-Kaikan Bldg. Magnetic Near-Field Noise Measurement and Improvement of Power Efficiency of LED Bulb without Switching Circuit
Shunsuke Koyanagi (Akita Univ.), Katsutoshi Saito (Saikatu), Motoshi Tanaka (Akita Univ.) EMCJ2017-68
A low-noise LED bulb is required for an anechoic chamber and a measurement room of biomedical signals. Magnetic near-fie... [more] EMCJ2017-68
pp.23-28
EMD 2017-10-20
14:10
Yamanashi Kofu-shi-Shoukoukaigisyo (Kofu) Measurement of temporal variation in micro gap length at the beginning of opening electrodes -- Varying capacitance measurement between the gaps by high-frequency voltage application --
Masao Shibayama, Yasunori Tanaka, Tatsuo Ishijima, Yoshihiko Uesugi (Kanazawa Univ.) EMD2017-40
A method was studied to measure time variation in micro gap length at the beginning of opening electrodes. Measurement g... [more] EMD2017-40
pp.13-18
ASN, MoNA, MICT
(Joint)
2017-01-19
11:20
Oita   Transcutaneous Energy Transmission System for Artificial Heart using Spider coils -- Investigation of ratio between inner and outer diameter ratio of coils to improve coupling factor --
Shintaro Maeda, Dairoku Muramatsu, Takahiko Yamamoto, Kohji Koshiji (Tokyo Univ. of Science) MICT2016-64
Transcutaneous energy transmission which supply energy to an implantable artificial heart is required for the viewpoint ... [more] MICT2016-64
pp.13-16
ICD, CPSY 2016-12-15
15:30
Tokyo Tokyo Institute of Technology [Poster Presentation] CMOS Transimpedance Analog Front End Circuit for an Optical Probe Current Sensor
Kousuke Oyangi, Kousuke Miyaji (Shinshu Univ.) ICD2016-74 CPSY2016-80
An optical probe current sensor using the magneto-optical effect has been studied for power electronics. This sensor sho... [more] ICD2016-74 CPSY2016-80
p.67
ED 2016-01-20
13:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] The unique features of GaN power devices and the technologies to utilize their innate advantages
Ken Nakahara, Kentaro Chikamatsu, Atsushi Yamaguchi, Naotaka Kuroda (ROHM) ED2015-115
The GaN power device have a very low value of RonQg as a figure of merit for power devices, where Ron denotes on-state r... [more] ED2015-115
pp.19-24
SDM 2015-06-19
15:15
Aichi VBL, Nagoya Univ. Electrical properties of GIZO TFT with ultrathin Al2O3 insulators by PE-ALD method
Kazunori Kurishima (Meiji Univ./NIMS), Toshihide Nabatame, Kazuhito Tsukagoshi, Akihiko Ohi, Toyohiro Chikyow (NIMS), Atsushi Ogura (Meiji Univ.) SDM2015-51
To investigate the influence of an Al2O3 layer on the electrical properties of Ga-In-Zn-O (GIZO) thin-film transistors (... [more] SDM2015-51
pp.69-73
ICD, CPSY 2014-12-01
15:15
Tokyo Kikai-Shinko-Kaikan Bldg. [Poster Presentation] Investigation of Frequency Characteristic of High Linearity Gm-Cell with Level Shifter
Tohru Kaneko, Shinya Yokomizo, Masaya Miyahara, Akira Matsuzawa (Tokyo Tech.) ICD2014-96 CPSY2014-108
High speed Gm-C filter requires high speed and high linearity Gm-cell like a flipped voltage follower; however it has po... [more] ICD2014-96 CPSY2014-108
pp.79-84
SDM 2014-10-16
16:00
Miyagi Niche, Tohoku Univ. Electrical characteristics of as-deposited HfN gate insulator formed by ECR plasma sputtering
Nithi Atthi, Shun-ichiro Ohmi (TokyoTech) SDM2014-87
In this paper, the electrical characteristics of as-deposited HfN high- gate insulator formed by electron-cyclot... [more] SDM2014-87
pp.19-22
ICD, ITE-IST 2014-07-03
10:25
Shimane Izumo-shi (Shimane) Design of 1mm-Pitch 80x80-Channel 322Hz-Frame-Rate Touch Sensor with Two-Step Dual-Mode Capacitance Scan
Noriyuki Miura (Kobe Univ.), Shiro Dosho (Panasonic), Daisuke Fujimoto, Takuya Kiriyama (Kobe Univ.), Hiroyuki Tezuka, Takuji Miki (Panasonic), Makoto Nagata (Kobe Univ.) ICD2014-20
A 1mm-pitch 80x80-channel 322Hz-frame-rate capacitive touch sensor has been developed. Multiple touch points are detecte... [more] ICD2014-20
pp.7-12
ICD 2014-01-28
15:00
Kyoto Kyoto Univ. Tokeidai Kinenkan [Poster Presentation] Phase compensation technique for low-noise small-area three-stage opamp
Hicham Haibi, Ippei Akita, Makoto Ishida (Toyohashi Univ. of Tech.) ICD2013-111
In this paper we present a low-noise small-area three-stage operational amplifier for biomedical arrayed sensors. Recent... [more] ICD2013-111
p.29
SDM 2013-06-18
11:15
Tokyo Kikai-Shinko-Kaikan Bldg. Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks
Chih-Yu Chang, Masafumi Yokoyama, Sang-Hyeon Kim (Univ. of Tokyo), Osamu Ichikawa, Takenori Osada, Masahiko Hata (Sumitomo Chemical), Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2013-50
Electrical properties of Al2O3 and HfO2/InGaAs metal-oxide-semiconductor (MOS) capacitors with Al, Au and Pd gate electr... [more] SDM2013-50
pp.33-37
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