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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2023-11-10 14:40 |
Tokyo | (Primary: On-site, Secondary: Online) |
[Invited Talk]
Characterization of Physical Properties in GaN under High Electric Field
-- Impact Ionization Coefficients and Critical Electric Field -- Takuya Maeda (UTokyo)  SDM2023-72 |
The accurate device simulation and prediction of the safe operating region for power devices require precise values of m... [more] | SDM2023-72 pp.41-46 |
| ED, CPM, LQE | 2021-11-26 14:55 |
Online | Online | High-breakdown-voltage Al0.36Ga0.64N-channel HFETs with a dual AlN/AlGaInN barrier layer Akiyoshi Inoue, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi (NIT) ED2021-32 CPM2021-66 LQE2021-44 |
In this study, we fabricated and characterized heterojunction field-effect transistors (HFETs) based on an Al0.36Ga0.64N... [more] | ED2021-32 CPM2021-66 LQE2021-44 pp.79-82 |
| LQE, CPM, ED | 2020-11-26 13:30 |
Online | Online | High-breakdown-voltage AlGaN channel HFETs with selective-area regrowth ohmic contacts Akiyoshi Inoue, Hiroki Harada, Mizuki Yamanaka, Takashi Egawa, Makoto Miyoshi (NIT) ED2020-7 CPM2020-28 LQE2020-58 |
Al0.19Ga0.81N-channel metal-insulator-semiconductor (MIS) HFETs employing a quaternary AlGaInN barrier layer and a selec... [more] | ED2020-7 CPM2020-28 LQE2020-58 pp.25-28 |
| LQE, CPM, ED | 2020-11-26 15:30 |
Online | Online | Enhanced Breakdown Voltage in AlGaN/GaN HEMTs by Oxygen Plasma Treatment Shunsuke Kamiya, Takashi Nishitani, Yu Matsuda, Nozomu Takano, Joel T. Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.) ED2020-12 CPM2020-33 LQE2020-63 |
With its high critical electric field as consequence of its wide bandgap, gallium nitride (GaN) is considered a leading ... [more] | ED2020-12 CPM2020-33 LQE2020-63 pp.45-48 |
| SDM | 2020-10-22 10:50 |
Online | Online | High capacitance density high breakdown voltage textured deep trench SiN capacitors toward 3D integration Koga Saito, Ayano Yoshida, Rihito Kuroda (Tohoku Univ.), Hiroshi Shibata, Taku Shibaguchi, Naoya kuriyama (LAPIS Semiconductor Miyagi), Shigetoshi Sugawa (Tohoku Univ.) SDM2020-15 |
High capacitance density and High breakdown voltage textured deep trench SiN capacitors are presented. The developed cap... [more] | SDM2020-15 pp.7-11 |
| CPM, LQE, ED | 2016-12-12 16:10 |
Kyoto | Kyoto University | AlGaN/GaN HEMTs with High Breakdown Voltage and High Drain Current Yudai Suzuki, Taisei Yamazaki, Shinya Makino, Joel T. Asubar, Hirokuni Tokuda, Masaaki Kuzuhara (Univ.Fukui) ED2016-64 CPM2016-97 LQE2016-80 |
We have studied the characteristics of off-state breakdown voltage and on-state resistance of large gate-periphery AlGaN... [more] | ED2016-64 CPM2016-97 LQE2016-80 pp.35-39 |
| WPT | 2016-03-08 09:50 |
Kyoto | Kyoto Univ. Uji Campus | Development of Several Tens of W Class High Power Rectifier with GaN Schottky Barrier Diodes Takaki Nishimura, Tomohiko Mitani, Naoki Shinohara (Kyoto Univ.), Masaya Okada, Yuusuke Yoshizumi, Masaki Ueno (SEI) WPT2015-87 |
We aimed to develop high power rectifiers of 2.45 GHz with GaN schottky barrier diodes that had about 100 V of the break... [more] | WPT2015-87 pp.61-65 |
| WPT (2nd) |
2015-12-10 10:00 |
Overseas | TamKang University, Tamsui Campus | Development of High Power Rectifier of 2.45 GHz using GaN Schottky Barrier Diodes with high thermal conductive AlN submounts Takaki Nishimura, Tomohiko Mitani, Naoki Shinohara (Kyoto Univ.), Masaki Ueno, Masaya Okada, Yuusuke Yoshizumi (SEI) |
We aimed to develop a high power rectifier of 2.45 GHz with a GaN schottky diode that had 107 V of the breakdown voltage... [more] | |
| SDM | 2015-11-06 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
GaN-based devices on Si substrates for power conversion systems Hidetoshi Ishida, Masahiro Ishida, Tetsuzo Ueda (Panasonic) SDM2015-90 |
GaN-based power devices have been expected to overcome the performance limit of conventional Si-based devices and enable... [more] | SDM2015-90 pp.35-38 |
| SDM | 2013-12-13 09:20 |
Nara | NAIST | Electrical characteristics of ALD-Al2O3 gate dielectric on n-GaN treated by high pressure water vapor annealing Koji Yoshitsugu, Tomoaki Umehara, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2013-117 |
In this paper, we investigated the effect of high pressure water vapor annealing (HPWVA) as a post deposition annealing ... [more] | SDM2013-117 pp.7-11 |
| SANE | 2012-10-11 14:20 |
Overseas | The SONGDO CONVENSIA, Incheon Korea | Preliminary Design of X-band High Efficiency Onboard Solid State Power Amplifier for Deep Space Missions Using GaN HEMT Yuta Kobayashi, Atsushi Tomiki, Shinichiro Narita, Shigeo Kawasaki (JAXA) SANE2012-74 |
One of the most indispensable impacts on onboard power consumption is generally caused by a transmission power amplifier... [more] | SANE2012-74 pp.101-105 |
| OPE, LQE, EMD, CPM, OME (Joint) [detail] |
2012-06-22 11:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | GHz response of a Si photodiode fabricated by 0.35um BiCMOS process Kazuaki Maekita, Toshiyuki Shimotori, Takeo Maruyama, Koichi Iiyama (Kanazawa Univ.) OPE2012-13 LQE2012-17 |
We fabricated silicon photodiode with standard 0.35um bipolar complementary metal-oxide-semiconductor process for optica... [more] | OPE2012-13 LQE2012-17 pp.17-20 |
| MW, ED | 2011-01-14 10:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Boosting of Blocking Voltages in GaN Transistors by Widening Depletion Layer in Si Substrate Hidekazu Umeda, Asamira Suzuki, Yoshiharu Anda, Masahiro Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic Co.) ED2010-184 MW2010-144 |
We propose a novel structure to boost the breakdown voltages of AlGaN/GaN hetero junction field effect transistors (HFET... [more] | ED2010-184 MW2010-144 pp.51-54 |
| MW, ED | 2009-01-16 11:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Mesa-gate AlGaN/GaN HEMT having nano-width channels Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) ED2008-223 MW2008-188 |
The surrounding field effect was effectively observed in a multi-mesa channel (MMC) using an AlGaN/GaN structure, where ... [more] | ED2008-223 MW2008-188 pp.141-144 |
| SDM, ED | 2008-07-11 10:50 |
Hokkaido | Kaderu２・７ | High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN Passivation Daisuke Shibata, Hisayoshi Matsuo (Matsushita Electric Industrial), Shuichi Nagai, Ming Li (Panasonic Boston Lab), Naohiro Tsurumi, Hidetoshi Ishida, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric Industrial) ED2008-73 SDM2008-92 |
We report ultra high blocking voltage AlGaN/GaN heterojunction transistors (HFETs) using thick poly-crystalline AlN (pol... [more] | ED2008-73 SDM2008-92 pp.177-181 |
| ED, MW | 2008-01-16 16:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | 10400V Blocking Voltage AlGaN/GaN Power HFET Daisuke Shibata, Yasuhiro Uemoto, Manabu Yanagihara, Hidetoshi Ishida (Panasonic), Shuichi Nagai (Panasonic Boston Lab.), Hisayoshi Matsuo (Panasonic), Ming Li (Panasonic Boston Lab.), Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) ED2007-213 MW2007-144 |
We report ultra high blocking voltage AlGaN/GaN heterojunction transistors (HFETs) on sapphire using via-holes and thick... [more] | ED2007-213 MW2007-144 pp.39-43 |
| MW, ED | 2007-01-19 14:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A Normally-off AlGaN/GaN Transistor with Low On-State Resistance Using Hole-Injection Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno, Hisayoshi Matsuo, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) |
We report a normally-off GaN-based transistor using conductivity modulation, which we call GIT (Gate Injection Transisto... [more] | ED2006-235 MW2006-188 pp.193-197 |
| MW, ED | 2007-01-19 15:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | High Voltage and High Frequency( over10MHz) Class-E Power-Supplies Using a GaN-HEMT Wataru Saito (Toshiba Semiconductor), Tomokazu Domon, Kunio Tsuda (Toshiba R & D Center), Ichiro Omura (Toshiba Semiconductor) |
GaN-HEMTs can realize high-voltage and ultra-low on-resistance due to high critical electric field and high electron mob... [more] | ED2006-237 MW2006-190 pp.205-208 |
| ED, CPM, LQE | 2006-10-05 13:25 |
Kyoto | Improvement of Breakdown Voltage of AlGaN/GaN HEMT Ken Nakata, Takeshi Kawasaki, Keita Matsuda, Takeshi Igarashi, Seiji Yaegashi (Eudyna) |
AlGaN/GaN HEMTs are attractive devices for high power switching applications because of their high electron mobility and... [more] | ED2006-153 CPM2006-90 LQE2006-57 pp.7-12 |
|
| LQE, ED, CPM | 2005-10-13 14:30 |
Shiga | Ritsumeikan Univ. | Normally-off AlGaN/GaN HEMT with Recessed Gate for High Power Applications Ken Nakata, Takeshi Kawasaki, Seiji Yaegashi (Eudyna Device Inc.) |
AlGaN/GaN HEMTs are attractive devices for high power switching applications because of their high electron mobility and... [more] | ED2005-129 CPM2005-116 LQE2005-56 pp.51-56 |
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