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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 29  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, ED 2021-01-29
13:00
Online Online DC Characteristics and MOS Interface properties of HfSiOx-gate AlGaN/GaN HEMTs
Ryota Ochi (Hokkaido Univ.), Erika Maeda (SIT/NIMS), Toshihide Nabatame (NIMS), Koji Shiozaki (IMaSS), Tamotsu Hashizume (Hokkaido Univ/IMaSS) ED2020-31 MW2020-84
GaN high-electron-mobility transistors (HEMTs) are very attractive for the fifth generation communication system. To bui... [more] ED2020-31 MW2020-84
pp.22-25
LQE, CPM, ED 2020-11-26
15:30
Online Online Enhanced Breakdown Voltage in AlGaN/GaN HEMTs by Oxygen Plasma Treatment
Shunsuke Kamiya, Takashi Nishitani, Yu Matsuda, Nozomu Takano, Joel T. Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.) ED2020-12 CPM2020-33 LQE2020-63
With its high critical electric field as consequence of its wide bandgap, gallium nitride (GaN) is considered a leading ... [more] ED2020-12 CPM2020-33 LQE2020-63
pp.45-48
LQE, CPM, ED 2020-11-27
11:20
Online Online Improved performance in GaN-based HEMTs with insulated gate structures
Ali Baratov, Takashi Ozawa, Shunpei Yamashita, Joel T. Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.) ED2020-16 CPM2020-37 LQE2020-67
Several groups have reported improved performance in GaN-based transistors employing metal-insulator-semiconductor (MIS)... [more] ED2020-16 CPM2020-37 LQE2020-67
pp.60-62
MWP 2020-05-28
13:30
Online Online [Invited Talk] Fabrication Process of InP-HEMT-based Sub-millimeter Wave ICs for Beyond 5G Application
Takuya Tsutsumi, Hiroki Sugiyama, Hiroshi Hamada, Hideyuki Nosaka, Hideaki Matsuzaki (NTT) MWP2020-1
The 300-GHz sub-millimeter-wave band is one of the candidate frequency for “Beyond 5G” networks to meet rapidly increasi... [more] MWP2020-1
pp.1-6
ED, THz [detail] 2019-12-23
16:20
Miyagi   InP Wafer-level Backside Process for Future Tera-hertz Operation
Takuya Tsutsumi, Hiroshi Hamada, Hiroki Sugiyama, Hideyuki Nosaka, Hideaki Matsuzaki (NTT) ED2019-82
The sub-millimeter-wave band would be utilized in future mobile networks to cope with increasing data rates. InP-based S... [more] ED2019-82
pp.23-28
ED, THz [detail] 2019-12-23
16:45
Miyagi   GaInSb n-Channel HEMTs Using Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer
Koki Osawa, Takuya Iwaki, Yuki Endoh, Mizuho Hiraoka, Naoyuki Kishimoto, Takuya Hayashi (TUS), Issei Watanabe (NICT/TUS), Yoshimi Yamashita, Shinsuke Hara, Takahiro Gotow, Akifumi Kasamatsu (NICT), Akira Endoh, Hiroki Fujishiro (TUS) ED2019-83
We succeeded in fabricating GaInSb n-channel HEMTs for the first time in the world and measured their characteristics. W... [more] ED2019-83
pp.29-32
ED, THz 2018-12-18
09:00
Miyagi RIEC, Tohoku Univ. [Invited Talk] High-Speed Performance of InP-, Sb- and GaN-based HEMTs
Akira Endoh, Issei Watanabe, Yoshimi Yamashita, Akifumi Kasamatsu (NICT), Hiroki Fujishiro (Tokyo Univ. of Science), Takashi Mimura (NICT) ED2018-62
We have fabricated nanometer-scale InP-, Sb- and GaN-based HEMTs by using electron beam lithography and measured their c... [more] ED2018-62
pp.35-38
ED, THz 2017-12-19
09:00
Miyagi RIEC, Tohoku Univ [Invited Talk] Development of Antimonide-Based Transistors
Hiroki Fujishiro, Kyosuke Isono, Takuto Takahashi, Yoshiaki Harada, Naoki Oka, Jun Takeuchi, Yui Fujisawa (TUS), Sachie Fujikawa (Tokyo Denki Univ.), Ryuto Machida (TUS), Issei Watanabe, Yoshimi Yamashita, Akira Endoh, Shinsuke Hara, Akifumi Kasamatsu (NICT) ED2017-81
Quantum corrected Monte Carlo simulation shows that the InSb HEMT exhibits intrinsic fT more than 1 THz from Vds of arou... [more] ED2017-81
pp.33-36
SDM, ED, CPM 2017-05-26
10:45
Aichi VBL, Nagoya University N-polar GaN MIS-HEMTs with Flat Interface Grown by Optimized MOVPE
Kiattiwut Prasertsuk, Tomoyuki Tanikawa, Takeshi Kimura, Shigeyuki Kuboya, Tetsuya Suemitsu, Takashi Matsuoka (Tohoku Univ.) ED2017-26 CPM2017-12 SDM2017-20
An N-polar GaN high electron mobility transistor (HEMT) has an advantage over a Ga-polar HEMT from viewpoints of a poten... [more] ED2017-26 CPM2017-12 SDM2017-20
pp.59-64
MW, ED 2017-01-27
14:25
Tokyo Kikai-Shinko-Kaikan Bldg. C-Ku band over 10 W Broadband Power Amplifier using Broadband Series-Shunt Inductor Matching Network
Eigo Kuwata, Atsuo Sugimoto, Hidetoshi Koyama, Yoshitaka Kamo, Ryota Komaru, Koji Yamanaka (Mitsubishi Electric) ED2016-110 MW2016-186
This paper reports on a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) Monolithic Microwave Integrated Cir... [more] ED2016-110 MW2016-186
pp.75-79
SDM 2015-11-06
13:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] GaN-based devices on Si substrates for power conversion systems
Hidetoshi Ishida, Masahiro Ishida, Tetsuzo Ueda (Panasonic) SDM2015-90
GaN-based power devices have been expected to overcome the performance limit of conventional Si-based devices and enable... [more] SDM2015-90
pp.35-38
SDM 2015-06-19
15:15
Aichi VBL, Nagoya Univ. Electrical properties of GIZO TFT with ultrathin Al2O3 insulators by PE-ALD method
Kazunori Kurishima (Meiji Univ./NIMS), Toshihide Nabatame, Kazuhito Tsukagoshi, Akihiko Ohi, Toyohiro Chikyow (NIMS), Atsushi Ogura (Meiji Univ.) SDM2015-51
To investigate the influence of an Al2O3 layer on the electrical properties of Ga-In-Zn-O (GIZO) thin-film transistors (... [more] SDM2015-51
pp.69-73
MWP 2015-05-25
09:55
Tokyo Kikai-Shinko-Kaikan Bldg. Increase in sensitivity and bandwidth measurement of terahertz detector using high electron mobility transistor
Safumi Suzuki, Takuro Nukariya, Yugo Ueda, Tomohiro Ootsuka, Masahiro Asada (Tokyo Tech) MWP2015-1
We propose and fabricated a high-electron-mobility-transistor (HEMT) terahertz detector integrated with bow-tie antenna ... [more] MWP2015-1
pp.1-5
MW, ED 2015-01-16
10:00
Tokyo Kikai-Shinko-Kaikan Bldg. An X-band 310 W High Power GaN HEMT Amplifier
Ken Kikuchi, Makoto Nishihara, Hiroshi Yamamoto, Shinya Mizuno, Fumikazu Yamaki, Takashi Yamamoto (SEDI) ED2014-126 MW2014-190
A high-output power and broadband GaN high electron mobility transistor (HEMT) has been developed for X-band application... [more] ED2014-126 MW2014-190
pp.53-58
MW
(2nd)
2014-11-26
- 2014-11-28
Overseas King Mongkut's Institute of Technology Ladkrabang (KMITL), Bangkok Fundamental Experiment of S-band Low Noise Amplifier and Dielectric Microcalorimeter for X-ray Detection System
Takumasa Noji (Tokyo Metropolitan Univ.), Akihira Miyachi, Takahiro Kikuchi, Ju Hyeonjae, Naoki Hasegawa, Satoshi Yoshida, Noriko Y. Yamasaki, Kazuhisa Mitsuda (JAXA), Takaya Ohashi (Tokyo Metropolitan Univ.), Shigeo Kawasaki (JAXA)
In this paper, we demonstrate the result of combining a low noise amplifier (LNA) and a dielectric microcalorimeter (DMC... [more]
ED 2013-08-09
09:00
Toyama University of Toyama MEMS Microphones on InP Substrates for High Performance Digital Ultrasonic Sensors
Shunya Fujino, Yuta Mizuno, Kazuhiro Takaoka, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2013-44
This paper describes the fabrication process of the MEMS microphones on InP substrates. The process is based on ozone as... [more] ED2013-44
pp.33-36
MW, ED 2013-01-18
14:55
Tokyo Kikai-Shinko-Kaikan Bldg. AlGaN/GaN MIS-Gate HEMTs with SiCN Gate Stacks
Kengo Kobayashi, Tomohiro Yoshida, Taiichi Otsuji, Ryuji Katayama, Takashi Matsuoka, Tetsuya Suemitsu (Tohoku Univ.) ED2012-126 MW2012-156
This paper reports AlGaN/GaN metal-insulator-semiconductor (MIS)-gate high electron mobility transistors (HEMTs) with a ... [more] ED2012-126 MW2012-156
pp.75-78
SDM, ED
(Workshop)
2012-06-29
11:00
Okinawa Okinawa Seinen-kaikan Improved current stability in multi-mesa-channel AlGaN/GaN HEMTs
Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.)
We have proposed and characterized a multi-mesa-channel (MMC) AlGaN/GaN HEMT. By forming a periodic trench only under th... [more]
ED, MW 2012-01-12
16:25
Tokyo Kikai-Shinko-Kaikan Bldg High Power X-band 200W AlGaN/GaN HEMT
Makoto Nishihara, Takashi Yamamoto (SEDI), Shinya Mizuno, Seigo Sano (SEI), Yuichi Hasegawa (SEDI) ED2011-141 MW2011-164
A 200 Watts GaN high electron mobility transistor (HEMT) has been developed for X-band applications. The device consists... [more] ED2011-141 MW2011-164
pp.121-123
CPM, LQE, ED 2010-11-11
16:25
Osaka   Current control of AlGaN/GaN HEMT with multi-mesa nanochannels
Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) ED2010-152 CPM2010-118 LQE2010-108
We proposed and characterized a multi-mesa-channel (MMC) AlGaN/GaN HEMT. By forming a periodic trench, the MMC HEMT has ... [more] ED2010-152 CPM2010-118 LQE2010-108
pp.47-50
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