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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2009-06-19 15:40 |
Tokyo |
An401・402 Inst. Indus. Sci., The Univ. of Tokyo |
Intrinsic Correlation between Mobility Reduction and Vt shift due to Interface Dipole Modulation in HfSiON/SiO2 stack by La or Al addition Kosuke Tatsumura, Takamitsu Ishihara, Seiji Inumiya, Kazuaki Nakajima, Akio Kaneko, Masakazu Goto, Shigeru Kawanaka, Atsuhiro Kinoshita (Toshiba Corp.) SDM2009-39 |
Intrinsic correlation between mobility reduction by remote Coulomb scattering (RCS) and threshold voltage shift (ΔVt), b... [more] |
SDM2009-39 pp.71-76 |
ICD, SDM |
2008-07-18 15:05 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Impact of Tantalum Composition in TaCx/HfSiON Gate Stack on Device Performance of Aggressively Scaled CMOS Devices with SMT and Strained CESL Masakazu Goto, Kosuke Tatsumura, Shigeru Kawanaka, Kazuaki Nakajima, Reika Ichihara, Yasuhito Yoshimizu, Hiroyuki Onoda, Koji Nagatomo, Toshiyuki Sasaki, Takashi Fukushima, Akiko Nomachi, Seiji Inumiya, Tomonori Aoyama, Masato Koyama, Yoshiaki Toyoshima (Toshiba Corp.) SDM2008-147 ICD2008-57 |
We report TaCx/HfSiON gate stack CMOS device with simplified gate 1st process from the viewpoints of fixed charge genera... [more] |
SDM2008-147 ICD2008-57 pp.109-114 |
SDM |
2008-06-10 11:20 |
Tokyo |
An401・402, Inst. Indus. Sci., The Univ. of Tokyo |
XPS Study of TiAlN/HfSiON Gate Stack
-- Reduction of Effective Work Function Change Induced by Al Diffusion -- Akio Ohta, Taiki Mori, Hiromichi Yoshinaga, Seiichi Miyazaki (Hiroshima Univ.), Masaru Kadoshima, Yasuo Nara (Selete) SDM2008-52 |
~30nm-thick TiAlN and TiN gate were deposited on HfSiON/SiO2/Si(100) stack structure and followed by anneal at 1000º... [more] |
SDM2008-52 pp.59-64 |
ICD |
2008-04-17 13:05 |
Tokyo |
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[Invited Talk]
Embedded DRAM Technology for Consumer Electronics Hiroki Shirai, Ryousuke Ishikawa, Yuichi Itoh, Takuya Kitamura, Mami Takeuchi, Takashi Sakoh, Ken Inoue, Tohru Kawasaki, Nobuyuki Katsuki, Hiroyuki Hoshizaki, Shinichi Kuwabara, Hidetaka Natsume, Masato Sakao, Takaho Tanigawa (NEC Electronics) ICD2008-4 |
This paper presents embedded DRAM device technology utilizing stacked MIM(Metal-Insulator-Metal) capacitor. Targeted for... [more] |
ICD2008-4 pp.19-24 |
SDM |
2007-06-08 10:30 |
Hiroshima |
Hiroshima Univ. ( Faculty Club) |
The Effect of Nitrogen Addition into HfSiON on Threshold Voltage Shift Chihiro Tamura, Tatsuya Naito (Univ. of Tsukuba), Motoyuki Sato, Seiji Inumiya (Selete), Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba) SDM2007-42 |
The threshold voltage shift was analyzed for the FETs with HfSiOx or HfSiON films. It was found that the NBTI slope, B (... [more] |
SDM2007-42 pp.59-64 |
ICD |
2007-04-12 10:40 |
Oita |
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Device Technology for embedded DRAM utilizing stacked MIM(Metal-Insulator-Metal) Capacitor Takaho Tanigawa, Yasushi Yamagata, Hiroki Shirai, Hirotoshi Sugimura, Tomoko Wake, Ken Inoue, Takashi Sakoh, Masato Sakao (NECEL) ICD2007-4 |
This paper presents embedded DRAM device technology utilizing stacked MIM(Metal-Insulator-Metal) capacitor. Targeted for... [more] |
ICD2007-4 pp.17-22 |
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