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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, THz [detail] 2019-12-23
16:20		 Miyagi   InP Wafer-level Backside Process for Future Tera-hertz Operation
Takuya Tsutsumi, Hiroshi Hamada, Hiroki Sugiyama, Hideyuki Nosaka, Hideaki Matsuzaki (NTT) ED2019-82		 The sub-millimeter-wave band would be utilized in future mobile networks to cope with increasing data rates. InP-based S... [more] ED2019-82
pp.23-28
ED, MW 2010-01-14
10:25		 Tokyo Kikai-Shinko-Kaikan Bldg Deviation from Proportional Relationship Between Emitter Charging Time and Inverse Current of Heterojunction Bipolar Transistors Operating at High Current Density
Masayuki Yamada, Takafumi Uesawa, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.) ED2009-182 MW2009-165		 We investigated the relationship between the emitter charging time and inverse current of heterojunction bipolar transis... [more] ED2009-182 MW2009-165
pp.43-48
ED 2009-06-12
10:20		 Tokyo   In-situ etching by CBr4 in InP heterojunction bipolar transistors with buried SiO2 wire
Naoaki Takebe, Hiroaki Yamashita, Shinnosuke Takahashi, Hisashi Saito, Takashi Kobayashi, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.) ED2009-46		 In order to obtain high-speed InP heterojunction bipolar transistors (HBTs), it is necessary to reduce the base-collecto... [more] ED2009-46
pp.51-55
ED, MW 2008-01-17
13:25		 Tokyo Kikai-Shinko-Kaikan Bldg. Fully Integrated HBT MMIC Power Amplifier Modules for Use in 2.5/3.5-GHz-Band WiMAX Applications
Miyo Miyashita, Toshio Okuda, Hitoshi Kurusu (MELCO), Shoichi Shimamura, Shinsuke Konishi (WTI), Junichi Udomoto, Ryo Matsushita, Yoshinobu Sasaki, Satoshi Suzuki, Takeshi Miura (MELCO), Yoshio Takahara (RSE), Makio Komaru, Kazuya Yamamoto (MELCO) ED2007-220 MW2007-151		 This paper describes two GaAs HBT MMIC power amplifier modules (PAs) for 2.5-GHz- and 3.5-GHz-band WiMAX applications. E... [more] ED2007-220 MW2007-151
pp.77-82
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