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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 10 of 10  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, THz [detail] 2019-12-23
16:20
Miyagi   InP Wafer-level Backside Process for Future Tera-hertz Operation
Takuya Tsutsumi, Hiroshi Hamada, Hiroki Sugiyama, Hideyuki Nosaka, Hideaki Matsuzaki (NTT) ED2019-82
The sub-millimeter-wave band would be utilized in future mobile networks to cope with increasing data rates. InP-based S... [more] ED2019-82
pp.23-28
MW, ED 2011-01-13
13:55
Tokyo Kikai-Shinko-Kaikan Bldg. A Study on GaAs-HBT MMIC couplers with feedback circuit techniques
Kazuya Yamamoto, Hitoshi Kurusu, Miyo Miyashita, Satoshi Suzuki, Akira Inoue (Mitsubishi Electric) ED2010-176 MW2010-136
This paper describes circuit design and measurement results of feedback circuit built-in spiral directional couplers and... [more] ED2010-176 MW2010-136
pp.7-12
ED, SDM 2010-06-30
15:30
Tokyo Tokyo Inst. of Tech. Ookayama Campus Fabrication of InP/InGaAs DHBTs with buried SiO2 wires
Naoaki Takebe, Takashi Kobayashi, Hiroyuki Suzuki, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.) ED2010-69 SDM2010-70
In this paper, we report the fabrication and device characteristics of InP/InGaAs double heterojunction bipolar transist... [more] ED2010-69 SDM2010-70
pp.75-79
ED, MW 2010-01-14
10:25
Tokyo Kikai-Shinko-Kaikan Bldg Deviation from Proportional Relationship Between Emitter Charging Time and Inverse Current of Heterojunction Bipolar Transistors Operating at High Current Density
Masayuki Yamada, Takafumi Uesawa, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.) ED2009-182 MW2009-165
We investigated the relationship between the emitter charging time and inverse current of heterojunction bipolar transis... [more] ED2009-182 MW2009-165
pp.43-48
ED 2009-06-12
10:20
Tokyo   In-situ etching by CBr4 in InP heterojunction bipolar transistors with buried SiO2 wire
Naoaki Takebe, Hiroaki Yamashita, Shinnosuke Takahashi, Hisashi Saito, Takashi Kobayashi, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.) ED2009-46
In order to obtain high-speed InP heterojunction bipolar transistors (HBTs), it is necessary to reduce the base-collecto... [more] ED2009-46
pp.51-55
MW, ED 2009-01-15
13:00
Tokyo Kikai-Shinko-Kaikan Bldg A Study on HBT RF Power Detectors with Directional Couplers on a GaAs Substrate
Kazuya Yamamoto, Hitoshi Kurusu, Miyo Miyashita, Satoshi Suzuki, Nobuyuki Ogawa, Masatoshi Nakayama (Mitsubishi Electric Co.) ED2008-210 MW2008-175
This paper describes circuit design and measurement results of a phase-shifter built-in spiral directional coupler and i... [more] ED2008-210 MW2008-175
pp.71-76
ED, MW 2008-01-17
11:10
Tokyo Kikai-Shinko-Kaikan Bldg. Improvement in reliability of InGaP/GaAs HBT's by ledge passivation
Fu-Ying Yang, Shinji Nozaki, Kazuo Uchida, Atsushi Koizumi (UEC) ED2007-217 MW2007-148
Because of the exposed heavily carbor-doped GaAs base in the InGaP/GaAs HBT’s, the current gain is significantly reduced... [more] ED2007-217 MW2007-148
pp.61-66
ED, MW 2008-01-17
13:00
Tokyo Kikai-Shinko-Kaikan Bldg. A Study on a Current-Mirror Based GaAs HBT RF Power Detector for Wireless Applications
Kazuya Yamamoto, Miyo Miyashita, Hitoshi Kurusu, Nobuyuki Ogawa, Teruyuki Shimura (MELCO) ED2007-219 MW2007-150
This paper describes circuit design and measurement results of a newly developed GaAs-HBT RF power detector for use in w... [more] ED2007-219 MW2007-150
pp.71-76
ED, MW 2008-01-17
13:25
Tokyo Kikai-Shinko-Kaikan Bldg. Fully Integrated HBT MMIC Power Amplifier Modules for Use in 2.5/3.5-GHz-Band WiMAX Applications
Miyo Miyashita, Toshio Okuda, Hitoshi Kurusu (MELCO), Shoichi Shimamura, Shinsuke Konishi (WTI), Junichi Udomoto, Ryo Matsushita, Yoshinobu Sasaki, Satoshi Suzuki, Takeshi Miura (MELCO), Yoshio Takahara (RSE), Makio Komaru, Kazuya Yamamoto (MELCO) ED2007-220 MW2007-151
This paper describes two GaAs HBT MMIC power amplifier modules (PAs) for 2.5-GHz- and 3.5-GHz-band WiMAX applications. E... [more] ED2007-220 MW2007-151
pp.77-82
ED, MW 2008-01-17
14:50
Tokyo Kikai-Shinko-Kaikan Bldg. A 26GHz Short-Range UWB Vehicular-Radar Using 2.5Gcps Spread Spectrum Modulation
Takeshi Fukuda, Noboru Negoro, Shinji Ujita, Shuichi Nagai, Masaaki Nishijima, Hiroyuki Sakai, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric) ED2007-223 MW2007-154
A 26GHz short-range radar system has been developed based on a 2.5Gcps direct sequence spread spectrum technique combine... [more] ED2007-223 MW2007-154
pp.93-97
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