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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| LQE, ED, CPM | 2023-11-30 13:30 |
Shizuoka | Fabrication of GaN HBTs using a quaternary AlGaInN emitter and a GaInN base Masaya Takimoto, Akira Mase, Kojima tomoki, Egawa Takashi, Miyoshi Makoto (Nagoya Inst.Tech.)  ED2023-15 CPM2023-57 LQE2023-55 |
Heterojunction bipolar transistors (HBTs) using GaN-based semiconductors are considered to be promising next-generation ... [more] | ED2023-15 CPM2023-57 LQE2023-55 pp.6-10 |
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| CPM, ED, LQE | 2022-11-24 15:15 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Study on p-GaInN base layer and quaternary AlGaInN emitter layer for GaN HBTs Yusuke Iida, Akira Mase, Masaya Takimoto, Yutaka Nikai, Takashi Egawa, Makoto Miyoshi (NITech) ED2022-36 CPM2022-61 LQE2022-69 |
GaN-based HBTs are very promising as next-generation high-frequency power devices. However, when considering the realiza... [more] | ED2022-36 CPM2022-61 LQE2022-69 pp.57-60 |
| MW | 2022-03-04 09:20 |
Online | Online | A study of diode linearizer for 100 GHz amplifier toward 6G Sumire Aoki, Hiroshi Hamada, Hiroto Yamamoto, Atsushi Fukuda (NTT DOCOMO), Jyo Teruo, Hiroyuki Takahashi (NTT), Hiroshi Okazaki, Yasunori Suzuki (NTT DOCOMO) MW2021-129 |
Sub-THz band (frequency range above 100 GHz) are gathering attention to implement 6G high-speed wireless communications.... [more] | MW2021-129 pp.100-104 |
| ED, THz [detail] | 2019-12-23 16:20 |
Miyagi | InP Wafer-level Backside Process for Future Tera-hertz Operation Takuya Tsutsumi, Hiroshi Hamada, Hiroki Sugiyama, Hideyuki Nosaka, Hideaki Matsuzaki (NTT) ED2019-82 |
The sub-millimeter-wave band would be utilized in future mobile networks to cope with increasing data rates. InP-based S... [more] | ED2019-82 pp.23-28 |
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| OCS, OPE, LQE | 2018-11-12 16:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg (Tokyo) | [Special Invited Talk]
400-Gbps DMT Transmission Using >100-GHz Analog Multiplexer and InP Mach-Zehnder Modulator Hiroshi Yamazaki, Munehiko Nagatani, Hitoshi Wakita, Yoshihiro Ogiso, Masanori Nakamura, Minoru Ida, Toshikazu Hashimoto, Hideyuki Nosaka, Yutaka Miyamoto (NTT) OCS2018-66 OPE2018-95 LQE2018-84 |
We review our latest experimental results presented at ECOC’18 post-deadline session. Using a >100-GHz analog multiplexe... [more] | OCS2018-66 OPE2018-95 LQE2018-84 p.29 |
| MW, WPT | 2018-04-27 14:50 |
Tokyo | Kikai-Shinko-Kaikan Building | S-band Tx Module with Cu Pillar Interconnection Si/GaN 3D Chip Embedding Substrate Kengo Kawasaki, Eigo Kuwata, Hidenori Ishibashi, Tomohiro Yao, Kiyoshi Ishida, Kazuhiro Maeda, Hironobu Shibata, Masaomi Tsuru, Kazutomi Mori, Mitsuhiro Shimozawa, Hiroshi Fukumoto (Mitsubishi Electric Corp.) WPT2018-5 MW2018-5 |
A SiGe chip and GaN chip packaged Tx module in S-band is represented. SiGe and GaN with Redistribution Layer (RDL) are i... [more] | WPT2018-5 MW2018-5 pp.19-23 |
| ED, MW | 2018-01-26 09:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | UHF-C Band Broadband Power Amplifier with Series Connected SiGe HBT and GaN HEMT Eigo Kuwata, Kengo Kawasaki, Daisuke Tsunami, Kazuhiro Maeda, Koji Yamanaka (MELCO) ED2017-98 MW2017-167 |
This paper reports on a multi chips amplifier consists of Gallium Nitride High Electron Mobility Transistor (GaN HEMT) a... [more] | ED2017-98 MW2017-167 pp.25-29 |
| OPE, LQE | 2014-06-20 15:15 |
Tokyo | Development of a Compact 224Gb/s DP-16QAM Modulator Module with Linear Driver ICs Taizo Tatsumi, Naoki Itabashi, Tomoko Ikagawa, Naoya Kono, Morihiro Seki, Keiji Tanaka, Kazuhiro Yamaji, Yasushi Fujimura, Katsumi Uesaka, Takashi Nakabayashi, Hajime Shoji, Shoichi Ogita (SEI) OPE2014-18 LQE2014-23 |
The digital coherent transmission technology using multi-level modulation has been considered to be a promising candidat... [more] | OPE2014-18 LQE2014-23 pp.27-30 |
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| MW | 2014-03-05 13:55 |
Ehime | Ehime University | Si/GaAs Hybrid Power Amplifier Modules for WCDMA Handset Terminals Teruyuki Shimura, Kazuya Yamamoto, Hiroaki Seki, Morishige Hieda, Yoshihito Hirano (Mitsubishi Electric) MW2013-218 |
Single-band (SB) and multiband (MB) power amplifier modules (PAM) are demonstrated for WCDMA handsets applications. The ... [more] | MW2013-218 pp.123-128 |
| ED, MW | 2014-01-16 14:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A Dual-Band Reflection Type Phase Shifter Using Active Loads Yuki Shoji, Kazuyoshi Sakamoto, Yasushi Itoh (Shonan Inst. of Tech.) ED2013-119 MW2013-184 |
A dual-band reflection type phase shifter using active loads is presented for realizing a wide phase-shifting range and ... [more] | ED2013-119 MW2013-184 pp.53-56 |
| ED, MW | 2014-01-16 14:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A Stopband-Tunable Dual-Band Low-Noise Differential Amplifier Kazuyoshi Sakamoto, Yuki Shoji, Yasushi Itoh (Shonan Inst. of Tech.) ED2013-120 MW2013-185 |
A stopband-tunable dual-band low-noise differential amplifier has been developed for the next generation adaptive and/or... [more] | ED2013-120 MW2013-185 pp.57-60 |
| ED, MW | 2012-01-12 10:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Low-Turn-on-Voltage Double Heterojunction Bipolar Transistors with a Narrow-Band-Gap InGaAsSb Base Grown by Metalorganic Chemical Vapor Deposition Takuya Hoshi, Hiroki Sugiyama, Haruki Yokoyama, Kenji Kurishima, Minoru Ida (NTT) ED2011-130 MW2011-153 |
Because of the significant increase of data traffic, there is now a strong demand for reducing the power consumptions of... [more] | ED2011-130 MW2011-153 pp.63-68 |
| ED, MW | 2012-01-12 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg | A 60-GS/s Digital-to-Analog Converter using 0.5-um InP HBTs for Optical Communication Systems Munehiko Nagatani, Hideyuki Nosaka, Kimikazu Sano, Koichi Murata, Kenji Kurishima, Minoru Ida (NTT) ED2011-131 MW2011-154 |
High-order multi-level modulation formats, such as 16-QAM and 64-QAM, are promising techniques for constructing beyond-1... [more] | ED2011-131 MW2011-154 pp.69-74 |
| ED, MW | 2012-01-12 11:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Components in 0.5-um-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications Yves Bouvier, Munehiko Nagatani, Kimikazu Sano, Koichi Murata, Kenji Kurishima, Minoru Ida (NTT) ED2011-132 MW2011-155 |
Two basic components for high-speed and low-power applications, a static frequency divider and decision circuit, have be... [more] | ED2011-132 MW2011-155 pp.75-79 |
| MW, ED | 2011-01-13 16:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A High-Speed Digital-to-Analog Converter with InP HBT Technology for Multi-Level Optical Transmission Systems Munehiko Nagatani, Hideyuki Nosaka, Shogo Yamanaka, Kimikazu Sano, Koichi Murata (NTT) ED2010-180 MW2010-140 |
High-order multi-level modulation formats, such as 16-QAM and 64-QAM, are promising techniques for constructing beyond-1... [more] | ED2010-180 MW2010-140 pp.29-33 |
| MW, ED | 2011-01-13 16:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | 32-GHz Phase Shifter IC with 810° control range Hideyuki Nosaka, Munehiko Nagatani, Kimikazu Sano, Koichi Murata (NTT) ED2010-181 MW2010-141 |
A phase-shifter IC with 810° control range was fabricated using InP HBTs. The phase shifter includes a wideband vector m... [more] | ED2010-181 MW2010-141 pp.35-40 |
| MW, ED | 2011-01-14 14:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A low 1/f Noise and High Reliability InP/GaAsSb DHBT for 76 GHz Automotive Radars Ko Kanaya, Hirotaka Amasuga, Shinsuke Watanabe, Yoshitsugu Yamamoto, Naoki Kosaka, Shinichi Miyakuni, Seiki Goto, Akihiro Shima (Mitsubishi Electric) ED2010-190 MW2010-150 |
This paper presents a low 1/f noise and high reliability InP/GaAsSb DHBT developed for automotive radars. To improve 1/... [more] | ED2010-190 MW2010-150 pp.81-86 |
| EMT, OPE, MW, IEE-EMT [detail] | 2010-07-30 10:50 |
Hokkaido | Hokkaido Univ. | Gain and Bandwidth Tunable Multi-Band Differential Amplifiers Yasushi Itoh, Kazuyoshi Sakamoto, Wei Cao, Keita Sakurai, Toshihiko Murata (Shonan Inst. of Tech.) MW2010-60 OPE2010-45 |
An L-band gain and bandwidth tunable low-noise differential amplifier has been developed for the next generation reconfi... [more] | MW2010-60 OPE2010-45 pp.193-197 |
| RCS, SIP | 2010-01-22 13:20 |
Fukuoka | Kyushu Univ. | Ultra-compact integrated circuits for Ku-band wireless communication system Young-Bae Park, Bo-Ra Jung, Jeong-Gab Ju, Jang-hyeon Jeong, Suk-Youb Kang, Young Yun (Korea Maritime Univ.) SIP2009-116 RCS2009-250 |
In this work, an ultra-compact wireless receiver chip set employing heterojunction bipolar transistor (HBT) were develop... [more] | SIP2009-116 RCS2009-250 pp.251-254 |
| ED, MW | 2010-01-14 10:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Deviation from Proportional Relationship Between Emitter Charging Time and Inverse Current of Heterojunction Bipolar Transistors Operating at High Current Density Masayuki Yamada, Takafumi Uesawa, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.) ED2009-182 MW2009-165 |
We investigated the relationship between the emitter charging time and inverse current of heterojunction bipolar transis... [more] | ED2009-182 MW2009-165 pp.43-48 |
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