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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 48  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, OME 2021-04-23
15:10
Okinawa Okinawaken Seinen Kaikan
(Primary: On-site, Secondary: Online)
[Invited Talk] Transistor application of polycrystalline Ge-based thin films
Kaoru Toko (Univ. of Tsukuba) SDM2021-4 OME2021-4
With the development of Ge device technologies, a polycrystalline Ge thin-film transistor (TFT) is attracting a great de... [more] SDM2021-4 OME2021-4
pp.15-18
OME, IEE-DEI 2021-03-01
13:30
Online Online [Invited Talk] Trend for Research and Development on Pb-free Sn-perovskite solar cells
Shuzi Hayase (UEC) OME2020-19
Certified efficiency of the solar cells consisting of conventional Pb perovskite as the light harvesting layer reached 2... [more] OME2020-19
pp.1-3
SDM, OME 2020-04-13
15:20
Okinawa Okinawaken Seinen Kaikan
(Cancelled, technical report was not issued)
[Invited Talk] Transistor application of polycrystalline Ge-based thin films
Kaoru Toko (Univ. of Tsukuba)
With the development of Ge device technologies, a polycrystalline Ge thin-film transistor (TFT) is attracting a great de... [more]
SDM 2019-06-21
11:40
Aichi Nagoya Univ. VBL3F Formation of Ultrathin Segregated-Ge Crystal on Al/Ge(111) Surface by Thermal Annealing
Masato Kobayashi, Akio Ohta, Masashi Kurosawa, Masaaki Araidai, Noriyuki Taoka, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2019-27
We have studied the chemical and crystallographic structures of vacuum evaporated Al/Ge(111) before and after the therma... [more] SDM2019-27
pp.11-15
SDM, ED, CPM 2019-05-16
13:25
Shizuoka Shizuoka Univ. (Hamamatsu) Dark Current Characteristics for Near-infrared pin Photodiodes of Ge Layer on Si
Mayu Tachibana, Shuhei Sonoi, Yasuhiko Ishikawa (Toyohashi Univ. Tech.) ED2019-11 CPM2019-2 SDM2019-9
Near-infrared pin photodiodes for silicon photonics are fabricated using Ge layers epitaxially grown on Si by ultrahigh-... [more] ED2019-11 CPM2019-2 SDM2019-9
pp.5-8
LQE 2018-02-23
10:35
Kanagawa   [Special Invited Talk] Epitaxial Growth of Ge on Si and Photodetector Applications
Yasuhiko Ishikawa (Toyohashi Univ. Tech.) LQE2017-152
Epitaxial growth of Ge layers on Si and applications to photodetectors (PDs) in the optical communication wavelength ran... [more] LQE2017-152
pp.7-10
OME, SDM 2017-04-20
13:00
Kagoshima Tatsugochou Shougaigakushuu Center Self-aligned four-terminal Cu-MIC poly-Ge TFTs fabricated at 300℃ on Glass Substare
Hiroki Utsumi, Taisei Sasaki, Shunya Sekiguchi, Shoya Takeuchi, Akito Hara (Tohoku Gakuin Univ.) SDM2017-1 OME2017-1
Flexible devices and wearable devices are receiving more attention due to their contributions in realizing the Internet ... [more] SDM2017-1 OME2017-1
pp.1-4
SDM, OME 2016-04-08
16:00
Okinawa Okinawa Prefectural Museum & Art Museum Non-thermal energy utilized low temperature solid phase crystallization of amorphous Ge on SiO2 substrate
Kinta Kusano, Kazuki Kudo, Kodai Tomouchi, Taisei Sakaguchi, Kenta Moto (NIT, Kumamoto), Shinichi Motoyama, Yutaka Kusuda, Masahiro Furuta (SAMCO), Nobuyuki Naka, Tomoko Numata (HORIBA), Kenichiro Takakura, Isao Tsunoda (NIT, Kumamoto) SDM2016-8 OME2016-8
We have investigated the low-temperature SPC of amorphous Ge on insulating substrate. High temperature and long time ann... [more] SDM2016-8 OME2016-8
pp.31-34
SDM, OME 2016-04-08
16:25
Okinawa Okinawa Prefectural Museum & Art Museum Electrical Characterization of Germanium films Crystallized by Atmospheric Pressure Micro-Thermal-Plasma-Jet Irradiation and Fabrication of High-Performance Thin Film Transistors.
Taichi Nakatani, Hiromu Harada, Seiichiro Higashi (Hiroshima Univ.) SDM2016-9 OME2016-9
We investigated the electrical properties of the crystalline germanium films crystallized by μ-TPJ irradiation. High spe... [more] SDM2016-9 OME2016-9
pp.35-38
OFT, OCS, OPE
(Joint) [detail]
2016-02-19
09:00
Okinawa Okinawa Univ. High-performance Ge-on-Si Near-infrared Photodiodes
Yasuhiko Ishikawa, Yuji Miyasaka, Kazuki Ito, Sho Nagatomo, Kazumi Wada (Univ. Tokyo) OCS2015-107 OFT2015-62 OPE2015-227
Near-infrared photodiodes for Si photonics are fabricated using Ge epitaxial layers on Si grown by
ultrahigh-vacuum che... [more]
OCS2015-107 OFT2015-62 OPE2015-227
pp.39-42(OCS), pp.39-42(OFT), pp.65-68(OPE)
SDM 2015-06-19
14:15
Aichi VBL, Nagoya Univ. Understanding of Schottky Barrier Height Modulation at NiGe/Ge Interfaces for Metal S/D Ge CMOS Technology
Hiroshi Oka, Yuya Minoura, Ryohei Asahara, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2015-48
Besides low solubility and activation rate of n-type dopant in Ge, Fermi level pinning (FLP) at metal/Ge interface leads... [more] SDM2015-48
pp.51-55
SDM 2015-06-19
14:35
Aichi VBL, Nagoya Univ. Control of electrical conduction property at metal/Ge interface by introducing ultra-high Sn content SnxGe1-x/Ge interlayer
Akihiro Suzuki, Shigehisa Shibayama, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2015-49
In order to realize high-performance Ge-channel CMOS, it is essential to reduce contact resistance at metal/Ge interface... [more] SDM2015-49
pp.57-61
SDM 2015-06-19
16:10
Aichi VBL, Nagoya Univ. Improvements of electrical properties of wafer-bonded GeOI substrates with ultrathin Al2O3/SiO2 hybrid BOX layers by post-annealing
Keisuke Yoshida, Shotaro Takeuchi, Yoshiaki Nakamura, Akira Sakai (Osaka Univ.) SDM2015-53
The electrical properties of wafer-bonded germanium (001)-on-insulator (Ge (001)-OI) substrates with Al2O3/SiO2 hybrid b... [more] SDM2015-53
pp.81-86
SDM 2015-03-02
11:35
Tokyo Kikai-Shinko-Kaikan Bldg [Invited Talk] Formation of Epitaxial Metal/Gemanium Contacts and Control of Electric Conduction Property at the Interface
Osamu Nakatsuka, Yunsheng Deng, Akihiro Suzuki, Mitsuo Sakashita, Noriyuki Taoka, Shigeaki Zaima (Nagoya Univ.) SDM2014-165
We need to develop the control technology of the electronic property at metal/Ge interfaces for low-power and high-speed... [more] SDM2014-165
pp.17-22
SDM, EID 2014-12-12
14:15
Kyoto Kyoto University Crystallization of Germanium Film with (111) Orientation on Amorphous Substrate by Laser Annealing
Toru Takao, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) EID2014-26 SDM2014-121
Single-grain Germanium (Ge) on amorphous substrate is required to realize the flexible system on panel display. Stripe-p... [more] EID2014-26 SDM2014-121
pp.67-71
OCS, OPE, LQE 2014-10-30
16:20
Nagasaki Nagasaki Museum of History and Culture A vertically illuminated Germanium Photodiode for 25Gbps multi-mode-fiber optical interconnect
Tadashi Okumura, Yuki Wakayama, Yasunobu Matsuoka, Katsuya Oda, Misuzu Sagawa, Takashi Takemoto, Etsuko Nomoto, Hideo Arimoto, Shigehisa Tanaka (Hitachi) OCS2014-65 OPE2014-109 LQE2014-83
For a multi mode fiber optical link, a high speed silicon photonics receiver based on a highly alignment tolerant vertic... [more] OCS2014-65 OPE2014-109 LQE2014-83
pp.123-126
SDM 2014-06-19
09:30
Aichi VBL, Nagoya Univ. Process Design of High-k/Ge Gate Stack for Improving Thermal Stability and Interface Properties in Sub-1-nm Regime
Ryohei Asahara, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2014-43
Suppression of GeOx formation and Ge diffusion into high-k layer is important to develop sub-1-nm EOT metal/high-k gate ... [more] SDM2014-43
pp.1-5
SDM 2014-06-19
10:30
Aichi VBL, Nagoya Univ. Stability of vacancy defect around metal/Ge interfaces; first-principles study
Shogo Sasaki, Takashi Nakayama (Chiba Univ.) SDM2014-46
It is well known that Ge has high density of vacancy defects compared to Si. Vacancy defects often change electronic pro... [more] SDM2014-46
pp.17-20
SDM 2014-06-19
11:25
Aichi VBL, Nagoya Univ. Efficient Activation of As+ Ion implantation into Ge substrate for Formation of Low-Resistive Shallow Junction
Shinya Hamada, Hideki Murakami, Takahiro Ono, Kuniaki Hashimoto (Hiroshima Univ.), Akio Ohta (Nagoya Univ.), Hiroaki Hanafusa, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2014-48
To improve the activation of As implanted into Ge substrate, we have studied the impact of substrate temperature on As+ ... [more] SDM2014-48
pp.27-30
SDM, OME 2014-04-10
15:00
Okinawa Okinawa-Ken-Seinen-Kaikan Bldg. Influence of electron irradiation on Au-induced crystallization for amorphous Ge/SiO2-substrate
Kenta Moto, Shin Sakiyama, Takatsugu Sakai, Kazutoshi Nakashima, Hayato Okamoto, Kenichiro Takakura, Isao Tsunoda (KNCT) SDM2014-5 OME2014-5
Au-induced crystallization for amorphous Ge(a-Ge)thin film on insulator is investigated as low-temperature crystallizati... [more] SDM2014-5 OME2014-5
pp.21-25
 Results 1 - 20 of 48  /  [Next]  
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