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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 12 of 12  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ICD, ITE-IST [detail] 2023-08-03
14:40
Hokkaido Hokkaido Univ. Multimedia Education Bldg. 3F
(Primary: On-site, Secondary: Online)
Real-Time Gate Current Change Gate Driver IC to Adapt to Operating Condition Variations of SiC MOSFETs
Dibo Zhang, Kohei Horii, Katsuhiro Hata, Makoto Takamiya (UTokyo) SDM2023-52 ICD2023-31
A digital gate driver IC with real-time gate current (IG) change by sensing drain current (ID) is applied to SiC MOSFETs... [more] SDM2023-52 ICD2023-31
pp.70-73
EE, IEE-SPC
(Joint)
2021-03-01
17:30
Online Online Examination by simulation of high frequency gate driver using 0.5 μm CMOS/SOI
Keisuke Otani, Minami Nakayama, Kazuma Ariyoshi, Satoshi Matsumoto (KIT) EE2020-47
In recent years, with the miniaturization and high performance of electronic devices and communication devices, miniatur... [more] EE2020-47
pp.39-43
NLP, NC
(Joint)
2020-01-24
13:30
Okinawa Miyakojima Marine Terminal A study of chattering in a high-side MOS-FET gate driver circuit
Takumi Ogura, Takuji Kousaka (Chukyo Univ.), Daisuke Itou (Gifu Univ.) NLP2019-94
A high-side gate driver circuit is used for switching converters to normally operate power MOS-FETs, but it is reported ... [more] NLP2019-94
pp.49-52
EE, IEE-SPC
(Joint)
2019-03-07
15:20
Okinawa   Efficiency Improvement of Bi-directional Inductive Power Transfer System by Adjusting The Length of Dead Time
Ryosuke Ota, Nobukazu Hoshi (TUS) EE2018-60
There is a case that snubber capacitors are connected in parallel to switching devices for applying soft switching techn... [more] EE2018-60
pp.13-18
ICD, CPSY, CAS 2018-12-23
15:30
Okinawa   Design of A 2.5kV Isolation 400Mbps Transformer-based Digital Isolator with High EMI Immunity for Power Electronics Environment
Tsukasa Kagaya, Koutarou Miyazaki, Makoto Takamiya, Takayasu Sakurai (Tokyo Univ.) CAS2018-113 ICD2018-97 CPSY2018-79
This paper introduces high-speed digital isolator for the harsh power electronics environments. In power electronics sys... [more] CAS2018-113 ICD2018-97 CPSY2018-79
pp.141-146
EE 2018-01-29
11:45
Oita Satellite Campus Oita Investigation of a POL for mobile equipment using GaN-HEMT
Atsushi Saito, Syohei Miyano, Seiya Abe, Satoshi Matumoto (KIT) EE2017-47
Recently, miniaturization of power supply is required along with miniaturization and high performance of electric and co... [more] EE2017-47
pp.29-34
EID, ITE-IDY, IEE-EDD, IEIJ-SSL, SID-JC [detail] 2017-01-26
14:26
Tokushima Tokushima Univ. Gate delay evaluation in a large-sized display
Chihiro Tsukii, Chang-Hoon Shim, Reiji Hattori (Kyushu Univ.) EID2016-32
In this study, we have extracted the gate line resistance and the parasitic capacitance per subpixel of active matrix li... [more] EID2016-32
pp.29-32
EE 2016-11-29
11:30
Tokyo Kikai-Shinko-Kaikan Bldg. Analysis of High Frequency Push-Pull LC Oscillator as Gate Driver
Naoyuki Ishibashi (Nagasaki Univ.), Masahiko Hirokawa (TDK), Akihiko Katsuki (Nagasaki Univ.) EE2016-45
The development of techniques for integrated circuits has driven their miniaturization. The reactance components of conv... [more] EE2016-45
pp.87-92
ICD, CPSY 2015-12-18
10:50
Kyoto Kyoto Institute of Technology [Invited Talk] GaN Power Switching Devices and its Integrated Circuits
Shuichi Nagai (Panasonic) ICD2015-86 CPSY2015-99
A GaN power semiconductor device attacks great attention due to its high-speed and low loss operation under high tempera... [more] ICD2015-86 CPSY2015-99
pp.83-85
EE, WPT
(Joint)
2014-11-18
10:25
Kyoto Doshisha University Experimental Verification of the Isolation System with Wireless Power Transfer for Multiple Gate Driver Supplies of a Medium Voltage Inverter
Keisuke Kusaka, Masakazu Kato, Koji Orikawa, Jun-ichi Itoh (Nagaoka Univ. of Tech.), Kazunori Morita, Takeshi Kondo (Meidensha) WPT2014-51
An isolation system for gate drivers of a three-phase medium-voltage inverter is proposed in this paper. The power consu... [more] WPT2014-51
pp.7-12
ICD, SDM 2012-08-03
10:05
Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido [Invited Talk] A DC-Isolated Gate Drive IC with Drive-by-Microwave Technology
Shuichi Nagai, Noboru Negoro, Takeshi Fukuda, Yasufumi Kawai, Tetsuzo Ueda, Tsuyoshi Tanaka, Nobuyuki Otsuka, Daisuke Ueda (Panasonic) SDM2012-79 ICD2012-47
We have developed new isolated gate drivers with the Drive-by-Microwave Technology that regenerates the gate signal afte... [more] SDM2012-79 ICD2012-47
pp.89-92
ICD, SDM 2012-08-03
10:55
Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido [Invited Talk] A Burst-Mode Laser Diode Driver with Burst-by-Burst Power Saving for 10G-EPON Systems
Hiroshi Koizumi, Minoru Togashi, Masafumi Nogawa, Yusuke Ohtomo (NTT) SDM2012-80 ICD2012-48
A burst-mode laser diode driver for 10G-EPON with a burst-by-burst power-saving function reduces power consumption by 93... [more] SDM2012-80 ICD2012-48
pp.93-98
 Results 1 - 12 of 12  /   
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