Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM, ICD, ITE-IST [detail] |
2023-08-03 14:40 |
Hokkaido |
Hokkaido Univ. Multimedia Education Bldg. 3F (Primary: On-site, Secondary: Online) |
Real-Time Gate Current Change Gate Driver IC to Adapt to Operating Condition Variations of SiC MOSFETs Dibo Zhang, Kohei Horii, Katsuhiro Hata, Makoto Takamiya (UTokyo) SDM2023-52 ICD2023-31 |
A digital gate driver IC with real-time gate current (IG) change by sensing drain current (ID) is applied to SiC MOSFETs... [more] |
SDM2023-52 ICD2023-31 pp.70-73 |
EE, IEE-SPC (Joint) |
2021-03-01 17:30 |
Online |
Online |
Examination by simulation of high frequency gate driver using 0.5 μm CMOS/SOI Keisuke Otani, Minami Nakayama, Kazuma Ariyoshi, Satoshi Matsumoto (KIT) EE2020-47 |
In recent years, with the miniaturization and high performance of electronic devices and communication devices, miniatur... [more] |
EE2020-47 pp.39-43 |
NLP, NC (Joint) |
2020-01-24 13:30 |
Okinawa |
Miyakojima Marine Terminal |
A study of chattering in a high-side MOS-FET gate driver circuit Takumi Ogura, Takuji Kousaka (Chukyo Univ.), Daisuke Itou (Gifu Univ.) NLP2019-94 |
A high-side gate driver circuit is used for switching converters to normally operate power MOS-FETs, but it is reported ... [more] |
NLP2019-94 pp.49-52 |
EE, IEE-SPC (Joint) |
2019-03-07 15:20 |
Okinawa |
|
Efficiency Improvement of Bi-directional Inductive Power Transfer System by Adjusting The Length of Dead Time Ryosuke Ota, Nobukazu Hoshi (TUS) EE2018-60 |
There is a case that snubber capacitors are connected in parallel to switching devices for applying soft switching techn... [more] |
EE2018-60 pp.13-18 |
ICD, CPSY, CAS |
2018-12-23 15:30 |
Okinawa |
|
Design of A 2.5kV Isolation 400Mbps Transformer-based Digital Isolator with High EMI Immunity for Power Electronics Environment Tsukasa Kagaya, Koutarou Miyazaki, Makoto Takamiya, Takayasu Sakurai (Tokyo Univ.) CAS2018-113 ICD2018-97 CPSY2018-79 |
This paper introduces high-speed digital isolator for the harsh power electronics environments. In power electronics sys... [more] |
CAS2018-113 ICD2018-97 CPSY2018-79 pp.141-146 |
EE |
2018-01-29 11:45 |
Oita |
Satellite Campus Oita |
Investigation of a POL for mobile equipment using GaN-HEMT Atsushi Saito, Syohei Miyano, Seiya Abe, Satoshi Matumoto (KIT) EE2017-47 |
Recently, miniaturization of power supply is required along with miniaturization and high performance of electric and co... [more] |
EE2017-47 pp.29-34 |
EID, ITE-IDY, IEE-EDD, IEIJ-SSL, SID-JC [detail] |
2017-01-26 14:26 |
Tokushima |
Tokushima Univ. |
Gate delay evaluation in a large-sized display Chihiro Tsukii, Chang-Hoon Shim, Reiji Hattori (Kyushu Univ.) EID2016-32 |
In this study, we have extracted the gate line resistance and the parasitic capacitance per subpixel of active matrix li... [more] |
EID2016-32 pp.29-32 |
EE |
2016-11-29 11:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Analysis of High Frequency Push-Pull LC Oscillator as Gate Driver Naoyuki Ishibashi (Nagasaki Univ.), Masahiko Hirokawa (TDK), Akihiko Katsuki (Nagasaki Univ.) EE2016-45 |
The development of techniques for integrated circuits has driven their miniaturization. The reactance components of conv... [more] |
EE2016-45 pp.87-92 |
ICD, CPSY |
2015-12-18 10:50 |
Kyoto |
Kyoto Institute of Technology |
[Invited Talk]
GaN Power Switching Devices and its Integrated Circuits Shuichi Nagai (Panasonic) ICD2015-86 CPSY2015-99 |
A GaN power semiconductor device attacks great attention due to its high-speed and low loss operation under high tempera... [more] |
ICD2015-86 CPSY2015-99 pp.83-85 |
EE, WPT (Joint) |
2014-11-18 10:25 |
Kyoto |
Doshisha University |
Experimental Verification of the Isolation System with Wireless Power Transfer for Multiple Gate Driver Supplies of a Medium Voltage Inverter Keisuke Kusaka, Masakazu Kato, Koji Orikawa, Jun-ichi Itoh (Nagaoka Univ. of Tech.), Kazunori Morita, Takeshi Kondo (Meidensha) WPT2014-51 |
An isolation system for gate drivers of a three-phase medium-voltage inverter is proposed in this paper. The power consu... [more] |
WPT2014-51 pp.7-12 |
ICD, SDM |
2012-08-03 10:05 |
Hokkaido |
Sapporo Center for Gender Equality, Sapporo, Hokkaido |
[Invited Talk]
A DC-Isolated Gate Drive IC with Drive-by-Microwave Technology Shuichi Nagai, Noboru Negoro, Takeshi Fukuda, Yasufumi Kawai, Tetsuzo Ueda, Tsuyoshi Tanaka, Nobuyuki Otsuka, Daisuke Ueda (Panasonic) SDM2012-79 ICD2012-47 |
We have developed new isolated gate drivers with the Drive-by-Microwave Technology that regenerates the gate signal afte... [more] |
SDM2012-79 ICD2012-47 pp.89-92 |
ICD, SDM |
2012-08-03 10:55 |
Hokkaido |
Sapporo Center for Gender Equality, Sapporo, Hokkaido |
[Invited Talk]
A Burst-Mode Laser Diode Driver with Burst-by-Burst Power Saving for 10G-EPON Systems Hiroshi Koizumi, Minoru Togashi, Masafumi Nogawa, Yusuke Ohtomo (NTT) SDM2012-80 ICD2012-48 |
A burst-mode laser diode driver for 10G-EPON with a burst-by-burst power-saving function reduces power consumption by 93... [more] |
SDM2012-80 ICD2012-48 pp.93-98 |