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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MW | 2024-03-01 09:50 |
Okayama | Okayama Prefectural University (Primary: On-site, Secondary: Online) |
An Envelope-Tracking Amplifier with High Speed and High Efficiency Source-Floating GaN Switching Envelope Amplifier Kento Saiki, Shuichi Sakata, Yuji Komatsuzaki, Shintaro Shinjo (Mitsubishi Electric)  MW2023-188 |
This paper reports the results of an envelope amplifier with a source-floating GaN switching amplifiers and an envelope ... [more] | MW2023-188 pp.70-73 |
| MW | 2023-11-16 13:25 |
Okinawa | Nago City Industrial Support Center (Okinawa) (Primary: On-site, Secondary: Online) |
Riemann Pump RF-Power DAC with Novel GaN HEMT Cell Utilizing Charge Reuse Transistor Control Mechanism Yuta Fuchibe, Shuichi Sakata, Yuji Komatsuzaki, Shintaro Shinjo (Mitsubishi Electric Corp) MW2023-129 |
We propose a new circuit topology for multi-bit Riemann Pump (RP) digital-to-analog converters (DACs). The RP-DAC is a D... [more] | MW2023-129 pp.19-22 |
| MW, EMCJ, EST, IEE-EMC [detail] | 2023-10-20 10:00 |
Yamagata | Yamagata University (Primary: On-site, Secondary: Online) |
Study on Efficiency Improvement of Dual-Input GaN Amplifier as Outphasing Amplifier Shinro Yatsuda, Rikito Matsuo, Takana Kaho (Shonan Inst.Tech.), Shuichi Sakata, Yuji Komatsuzaki, Koji Yamanaka (Mitsubishi Electric) EMCJ2023-59 MW2023-113 EST2023-86 |
We are developing a base station amplifier that covers a wide frequency range of 4G/5G by switching the Doherty and outp... [more] | EMCJ2023-59 MW2023-113 EST2023-86 pp.125-130 |
| PRMU, IBISML, IPSJ-CVIM [detail] | 2023-03-03 16:50 |
Hokkaido | Future University Hakodate (Primary: On-site, Secondary: Online) |
Parallel-Data-Free Japanese Singer Conversion using CycleGAN Considering Perceptual Loss in Singing Phoneme Sequences Kanade Gemmoto, Nobutaka Shimada, Tadashi Matsuo (Ritsumeikan Univ) PRMU2022-114 IBISML2022-121 |
This paper proposes a one-to-one Japanese Singing Voice Conversion (SVC) method without using parallel data. Our method... [more] |
PRMU2022-114 IBISML2022-121 pp.293-298 |
| MW, ED | 2023-01-27 13:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
Demonstration of high current and high voltage E-mode operation in EID AlGaN/GaN MOS-HEMT Takuma Nanjo, Tomohiro Shinagawa, Tatsuro Watahiki, Naruhisa Miura, Masayuki Furuhashi, Kazuyasu Nishikawa (Mitsubishi Electric), Takashi Egawa (NITech) ED2022-93 MW2022-152 |
(To be available after the conference date) [more] | ED2022-93 MW2022-152 pp.36-39 |
| EE, OME, CPM | 2022-12-09 11:20 |
Tokyo | (Primary: On-site, Secondary: Online) |
Investigation for one-chip high functionality gate driver IC Yusuke Ogushi, Satoshi Matsumoto (KIT) EE2022-22 CPM2022-77 OME2022-35 |
GaN power devices have caught the attentions for high frequency switching and high efficiency of power supply. Our goal ... [more] | EE2022-22 CPM2022-77 OME2022-35 pp.18-23 |
| WPT (2nd) |
2022-12-05 - 2022-12-06 |
Kyoto | Uji Obaku Plaza Kihada Hall, Uji Campus, Kyoto University (Primary: On-site, Secondary: Online) |
Field-Plate Length Dependence of 2.4-GHz Rectification Characteristics of Gated-Anode GaN HEMT Based Diode Gen Taguchi, Naoya Kishimoto, Youichi Tsuchiya, Debaleen Biswasa, Ma Qiang (Nagoya Inst. of Tech.), Yuji Ando, Hidemasa Takahashi (Nagoya Univ), Kenji Itoh, Naoki Sakai (Kanazawa Inst. of Tech), Akio Wakejima (Nagoya Inst. of Tech.) |
We demonstrate field-plate (FP) length dependence of 2.4-GHz rectification characteristics of gated-anode GaN HEMT based... [more] | |
| MW, WPT | 2022-04-15 15:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
[Invited Talk]
A High Efficiency 3.6-4.0 GHz Envelope-Tracking Power Amplifier Using GaN Soft-Switching Buck-Converter Yuji Komatsuzaki (Mitsubishi Electric), Sandro Lanfranco, Tapio Kolmonen, Olli Piirainen, Jarno K. Tanskanen (Nokia Bell Labs), Shuichi Sakata (Mitsubishi Electric), Rui Ma (MERL), Shintaro Shinjo, Koji Yamanaka (Mitsubishi Electric), Peter Asbeck (UCSD) WPT2022-11 MW2022-11 |
We report a high efficiency sub-6GHz wideband Envelope-Tracking Power Amplifier (ET-PA) including an envelope amplifier ... [more] | WPT2022-11 MW2022-11 pp.40-45 |
| EE, IEE-SPC (Joint) |
2021-03-01 17:30 |
Online | Online | Examination by simulation of high frequency gate driver using 0.5 μm CMOS/SOI Keisuke Otani, Minami Nakayama, Kazuma Ariyoshi, Satoshi Matsumoto (KIT) EE2020-47 |
In recent years, with the miniaturization and high performance of electronic devices and communication devices, miniatur... [more] | EE2020-47 pp.39-43 |
| EE | 2021-01-25 13:55 |
Online | Online (Zoom) | Analysis on the turn-on transient of cascode connected Polarization Super-Junction GaN-FET Daisuke Arai (Nagoya Univ.), Yusuke Kamiyama, Shuichi Yagi, Hiroji Kawai, Hironobu Narui (POWDEC), Jun Imaoka, Masayoshi Yamamoto (Nagoya Univ.) EE2020-32 |
The turn-on transient of the cascode connected Polarization Super-Junction (PSJ) GaN-FET with 1200V class has been inves... [more] | EE2020-32 pp.47-52 |
| EMCJ | 2021-01-22 13:40 |
Online | Online | TLP circuit for immunity evaluation emulating electromagnetic disturbance in automobile Kyousuke Tanaka, Dai-ichiro Koike, Tohlu Matsushima, Yuki Fukumoto (Kyutech) EMCJ2020-65 |
The purpose of this research is to make a disturbance generator for evaluation of immunity characteristic of electronic ... [more] | EMCJ2020-65 pp.7-12 |
| EE, OME, CPM | 2019-11-26 09:20 |
Tokyo | Japan Society for the Promotiton of Machine Industry | Feasibility Study of Variable Voltage Sources for IGBT Drive Circuits Kazuto Ura, Yoichi Ishizuka (Nagasaki Univ.) EE2019-36 CPM2019-78 OME2019-22 |
High-power / high-voltage converters are used in housings for industrial and automotive applications, and insulated gate... [more] | EE2019-36 CPM2019-78 OME2019-22 pp.1-6 |
| IN, NS (Joint) |
2019-03-05 13:50 |
Okinawa | Okinawa Convention Center | Study and implementation of route capacity improvement about an open network OS Shigemasa Kumagawa, Takayoshi Hirasawa, Ken Takahashi, Hirotaka Yoshioka (NTT) NS2018-265 |
The requirement of network infrastructure is to provide various network services rapidly. In this context, general-purpo... [more] | NS2018-265 pp.421-426 |
| EE | 2019-01-17 12:55 |
Kumamoto | KCIC | A Study on Current-source/Voltage-source Dual-Mode Non-isolated Class-E2 DC-DC Converter with Pulse-Density-Modulation Kenta Fujii, Tomokazu Mishima (KU) EE2018-54 |
GaN-HFET class-E power conversion technology is suitable for high frequency power conversion in the MHz band. The pulse ... [more] | EE2018-54 pp.97-102 |
| EE, WPT, IEE-SPC | 2018-07-03 09:25 |
Hokkaido | Hokkaido University | High Power Wireless Power Transfer System Using GaN Devices Yasuyuki Okiyoneda, Masashi Mochizuki, Kitao Yamamoto, Hiroshi Watanabe (Showa Aircraft Co,Ltd.) WPT2018-20 |
A smaller size and higher efficiency power converter requires high frequency devices, which are to be realized by SiC an... [more] | WPT2018-20 pp.57-59 |
| EE, WPT, IEE-SPC | 2018-07-03 10:15 |
Hokkaido | Hokkaido University | Application Study of Power Control System with Compound Semiconductor devices for Future Commercial Satellites Minoru Iwasa, Hiromasa Kondo (JAXA) EE2018-14 |
In the commercial satellites, the orbit control systems are changed to the electoric propulsion from the chemical propul... [more] | EE2018-14 pp.83-86 |
| EE | 2018-01-29 11:45 |
Oita | Satellite Campus Oita | Investigation of a POL for mobile equipment using GaN-HEMT Atsushi Saito, Syohei Miyano, Seiya Abe, Satoshi Matumoto (KIT) EE2017-47 |
Recently, miniaturization of power supply is required along with miniaturization and high performance of electric and co... [more] | EE2017-47 pp.29-34 |
| MW | 2017-12-19 10:30 |
Tokyo | 4.5-/4.9-GHz-Band Tunable GaN HEMT High Efficiency Power Amplifier with PIN Diode Switches. Kazuki Mashimo, Ryo Ishikawa, Kazuhiko Honjou (Univ. of Electro-Communications) MW2017-142 |
For the next generation wireless communication systems, 4.5-/4.9-GHz band tunable GaN HEMT high efficiency power amplifi... [more] | MW2017-142 pp.1-6 |
|
| MWP, OPE, EMT, MW, EST, IEE-EMT [detail] | 2017-07-21 11:00 |
Hokkaido | Obihiro Chamber of Commerce and Industry | An 80MHz Modulation Bandwidth High Efficiency Multi-band Envelope-Tracking Power Amplifier Using GaN Single-Phase Buck-Converter Shuichi Sakata (Mitsubishi Electric), Sandro Lanfranco, Tapio Kolmonen, Olli Piirainen (Nokia Bell Labs), Takanobu Fujiwara, Shintaro Shinjo (Mitsubishi Electric), Peter Asbeck (Univ. of California, San Diego) EMT2017-31 MW2017-56 OPE2017-36 EST2017-33 MWP2017-33 |
We report a high efficiency multi-band Envelope-Tracking Power Amplifier (ET-PA) that supports modulation bandwidth up t... [more] | EMT2017-31 MW2017-56 OPE2017-36 EST2017-33 MWP2017-33 pp.133-138 |
| EE, IEE-HCA | 2017-05-25 13:30 |
Tokyo | The Kikai Shinko Kaikan building | Realization of high frequency LLC resonant converter with GaN device Takehiro Shimizu (Shindengen), Yoshiaki Matsuda (STES), Yousuke Inoue (Shindengen Kumamoto) EE2017-2 |
Recently, the miniaturization and thinning of equipment has advanced, demand for miniaturization of the power supply to ... [more] | EE2017-2 pp.7-11 |
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