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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, MW | 2024-01-25 15:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
Development of GaN HEMT using a diamond substrate as a heat spreader Yusuke Shirayanagi (Mitsubishi Electric/Kumamoto Univ.), Shingo Tomohisa (Mitsubishi Electric), Keiji Kasamura, Hiroki Toyoda (Kumamoto Univ.), Takashi Matsumae, Yuichi Kurashima, Hideki Takagi (AIST), Akihisa Kubota (Kumamoto Univ.), Takashi Takenaga (Mitsubishi Electric)  ED2023-69 MW2023-161 |
1-inch size GaN-on-Diamond high electron mobility transistors (GoD HEMTs) has been successfully fabricated using surface... [more] | ED2023-69 MW2023-161 pp.15-18 |
| LQE, ED, CPM | 2023-11-30 13:05 |
Shizuoka | AlGaInN/GaN highhigh-electron mobility transistors with a thin unintentionally doped GaN channel and an AlN back barrier formed using a single single-crystal AlN substrate Tomoyuki Kawaide, Yoshinobu Kometani, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. Tech) ED2023-14 CPM2023-56 LQE2023-54 |
A high-electron-mobility transistor (HEMT) structure with a strain-engineered quaternary AlGaInN barrier layer, a thin u... [more] | ED2023-14 CPM2023-56 LQE2023-54 pp.1-5 |
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| LQE, ED, CPM | 2023-11-30 17:10 |
Shizuoka | Device characteristics of GaInN-based photovoltaic cells fabricated on Free-Standing GaN substrate for optical wireless power transmission system Takahiro Fujiawa, Nan Hu, Tomoki Kojima, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. Tech.) ED2023-23 CPM2023-65 LQE2023-63 |
GaInN-based photovoltaic (PV) devices are highly promising for application to optical wireless power transmission (OWPT)... [more] | ED2023-23 CPM2023-65 LQE2023-63 pp.44-47 |
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| LQE, ED, CPM | 2023-12-01 09:55 |
Shizuoka | Simultaneous microscopic PA/PL line-scan measurements in InGaN-quantum wells on a stripe-core GaN Substrate Syoki Jinno, Atsushi A. Yamaguchi, Keito Mori-Tamamura (Kanazawa Inst. of Tech.), Susumu Kusanagi, Yuya Kanitani, Shigetaka Tomiya, Yoshihiro Kudo (Sony Semiconductor Solutions Corp.) ED2023-25 CPM2023-67 LQE2023-65 |
Accurate measurement of internal quantum efficiency (IQE) is necessary for a comprehensive understanding of the electron... [more] | ED2023-25 CPM2023-67 LQE2023-65 pp.52-55 |
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| LQE, ED, CPM | 2023-12-01 10:20 |
Shizuoka | Polarization control of surface emission from c-plane InGaN quantum wells and determination of deformation potential in InGaN alloy materials Keito Mori-Tamamura, Atsushi A. Yamaguchi (Kanazawa Inst. Tech), Tomohiro Makino, Maho Ohara, Tatsushi Hamaguchi, Rintaro Koda (Sony Semiconductor Solutions) ED2023-26 CPM2023-68 LQE2023-66 |
InGaN-quantum-well (QW) based vertical-cavity surface-emitting lasers (VCSELs), which are usually fabricated on the c-pl... [more] | ED2023-26 CPM2023-68 LQE2023-66 pp.56-59 |
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| SDM | 2023-11-09 11:20 |
Tokyo | (Primary: On-site, Secondary: Online) |
[Invited Talk]
Current Status and Future Prospects of GaN Vertical Power Devices on GaN substrates Jun Suda (Nagoya Univ.) SDM2023-63 |
Recent progress of GaN vertical power devices which fabricated on n-type GaN bulk substates. Fundamental properties of ... [more] | SDM2023-63 p.7 |
| MRIS, CPM, ITE-MMS, OME [detail] | 2023-10-26 14:30 |
Niigata | Niigata Univ. Ekiminami Campus (Primary: On-site, Secondary: Online) |
Improvement of non-fullerene organic solar cells by using the localized surface plasmon resonance effect of metal nanoparticles Yuting Miao, Sachiko Jonai, Kazunari Shinbo, Keizo Kato, Akira Baba (Niigata Univ.) MRIS2023-10 CPM2023-44 OME2023-31 |
Organic Solar Cells (OSCs) based on the bulk heterojunction (BHJ) structure have many potential advantages such as flexi... [more] | MRIS2023-10 CPM2023-44 OME2023-31 pp.10-13 |
| SDM | 2023-10-13 17:00 |
Miyagi | Niche, Tohoku Univ. | A study on the integration process of ReRAM and OFET utilizing Nitrogen doped LaB6/LaBxNy stacked structure Jiaang Zhao, Shun-ichiro Ohmi (Tokyo Tech) SDM2023-61 |
LaBxNy insulator films are realized by utilizing Ar/N2 plasma reactive sputtering with nitrogen doped LaB6 as a target. ... [more] | SDM2023-61 pp.46-49 |
| EA, US (Joint) |
2022-12-22 16:50 |
Hiroshima | Satellite Campus Hiroshima | [Poster Presentation]
Characteristics of YbGaN and YbAlN epitaxial thin film resonators Song Li, Junjun Jia, Takahiko Yanagitani (Waseda Univ.) US2022-64 |
Bulk acoustic wave (BAW) resonators based on AlN or GaN piezoelectric thin films are suitable for GHz frequency filters ... [more] | US2022-64 pp.74-79 |
| ITE-IDY, EID, SID-JC [detail] | 2022-07-29 13:55 |
Online | Online (Zoom) | [Invited Talk]
Effect of light irradiation during deposition on accumulation charge and current efficiency in model OLEDs Yuya Tanaka (Gunma Univ.), Yuki Tazo, Shin Shinohara, Hideyuki Kayaguchi, Naoya Abe, Keisuke Kurihara, Masahiro Ohara, Hisao Ishii (Chiba Univ.) |
When polar molecules such as tris-(8-hydroxyquinolinato)aluminium (Alq3) and 1,3,5-tris(1-phenyl-1H-benzimidazole-2-yl)b... [more] | |
| MW, WPT | 2022-04-15 15:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
Distortion characteristics comparison of AlGaN-GaN HEMTs between SiC and GaN Substrates Atsushi Moriwaki, Shinji Hara (NU) WPT2022-10 MW2022-10 |
In this report, we propose a new intermodulation distortion (IMD) measurement method to evaluate the influence of curren... [more] | WPT2022-10 MW2022-10 pp.35-39 |
| OME | 2021-12-24 16:10 |
Online | Online | Cell culture of molecular nanocoil scaffolds for the application of regenerative medicine. Tamaki Nishimura, Chinatsu Matsumoto (TUAT), Sadafumi Nishihara (Hiroshima Univ.), Tomoyuki Akutagawa (Tohoku Univ.), Takayoshi Nakamura (Hokkaido Univ.), Yoko Tatewaki (TUAT) OME2021-33 |
In the field of regenerative medicine, there is need to develop scaffolds that cells to function effectively for regener... [more] | OME2021-33 pp.29-31 |
| US | 2021-07-30 16:00 |
Online | Online | [Invited Talk]
Nanorheology for Printed Electronics technology Shunto Arai (Univ. Tokyo) US2021-24 |
Printed electronics is a technology for manufacturing electronic devices using a printing process. In this process, elec... [more] | US2021-24 pp.31-35 |
| LQE, CPM, ED | 2020-11-26 10:05 |
Online | Online | Internal and External Quantum Efficiency in InGaN Quantum Wells Estimated by Simultaneous Photoacoustic and Photoluminescence Method and Integrating-Sphere Method Keito Mori, Yuchi Takahashi, Shigeta Sakai, Yuya Morimoto, Atsushi A. Yamaguchi (KIT), Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya (Sony) ED2020-1 CPM2020-22 LQE2020-52 |
In our previous reports, we proposed photoacoustic (PA) and photoluminescence (PL) simultaneous measurements as a method... [more] | ED2020-1 CPM2020-22 LQE2020-52 pp.1-4 |
| LQE, CPM, ED | 2020-11-27 11:20 |
Online | Online | Improved performance in GaN-based HEMTs with insulated gate structures Ali Baratov, Takashi Ozawa, Shunpei Yamashita, Joel T. Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.) ED2020-16 CPM2020-37 LQE2020-67 |
Several groups have reported improved performance in GaN-based transistors employing metal-insulator-semiconductor (MIS)... [more] | ED2020-16 CPM2020-37 LQE2020-67 pp.60-62 |
| LQE, CPM, ED | 2020-11-27 13:20 |
Online | Online | Study on crystal growth for nanowire-based light emitter including multiple-quantum-shell and tunnel junction Yoshiya Miyamoto, Naoki Sone, Weifang Lu, Renji Okuda, Kazuma Ito, Koji Okuno, Kazuyoshi Iida, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Meijo Univ./Akasaki Research Center, Nagoya Univ.) ED2020-19 CPM2020-40 LQE2020-70 |
In this work, we investigated the growth conditions of n-GaN cap layer for nanowire-based laser diodes. The selective-ar... [more] | ED2020-19 CPM2020-40 LQE2020-70 pp.71-74 |
| CPM | 2020-10-29 14:50 |
Online | Online | Preparations and some properties of GaN-nanopillar-crystal-based pn junctions on multi-crystalline Si substrates Shingo Taniguchi, Sora Saito, Houyao Xue, Tsubasa Saito, Yuichi Sato (Akita Univ) CPM2020-16 |
We tried to form pn junction diodes using GaN-based nanopillar crystals using multicrystalline Si, which is widely used ... [more] | CPM2020-16 pp.19-22 |
| ED, MW | 2020-01-31 11:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Simple Photoelectrochemical Etching for Recess Gate GaN HEMT Fumimasa Horikiri, Noboru Fukuhara (SCIOCS), Masachika Toguchi, Kazuki Miwa (Hokaido Univ.), Yoshinobu Narita, Osamu Ichikawa, Ryota Isono, Takeshi Tanaka (SCIOCS), Taketomo Sato (Hokaido Univ.) ED2019-98 MW2019-132 |
Photoelectrochemical (PEC) etching is a promising technology for fabricating GaN devices with low damage. In the simple ... [more] | ED2019-98 MW2019-132 pp.25-28 |
| ED, MW | 2020-01-31 16:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Research and development of compound semiconductor electron devices and high-frequency measurement technologies for millimeter- and submillimeter-wave wireless communications Issei Watanabe, Yoshimi Yamashita, Akifumi Kasamatsu (NICT) ED2019-105 MW2019-139 |
Compound semiconductor electron devices such as GaN-based high electron mobility transistors (HEMTs) have been expected ... [more] | ED2019-105 MW2019-139 pp.59-64 |
| CPM, LQE, ED | 2019-11-21 15:50 |
Shizuoka | Shizuoka Univ. (Hamamatsu) | Polarization characteristics in GaN-based vertical cavity surface emitting laser with AlInN/GaN distribution bragg reflectors Kaoru Oda, Ryosuke Iida, Sho Iwayama, Kazuki Kiyohara, Tetsuya Takeuci, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.) ED2019-46 CPM2019-65 LQE2019-89 |
In this study, we investigated polarization characteristics of GaN-based VCSELs. In particular, dependences of substrate... [more] | ED2019-46 CPM2019-65 LQE2019-89 pp.57-60 |
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