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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 92  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, WPT 2022-04-15
15:40
Tokyo Kikai-Shinko-Kaikan Bldg.
(Primary: On-site, Secondary: Online)
[Invited Talk] A High Efficiency 3.6-4.0 GHz Envelope-Tracking Power Amplifier Using GaN Soft-Switching Buck-Converter
Yuji Komatsuzaki (Mitsubishi Electric), Sandro Lanfranco, Tapio Kolmonen, Olli Piirainen, Jarno K. Tanskanen (Nokia Bell Labs), Shuichi Sakata (Mitsubishi Electric), Rui Ma (MERL), Shintaro Shinjo, Koji Yamanaka (Mitsubishi Electric), Peter Asbeck (UCSD) WPT2022-11 MW2022-11
We report a high efficiency sub-6GHz wideband Envelope-Tracking Power Amplifier (ET-PA) including an envelope amplifier ... [more] WPT2022-11 MW2022-11
pp.40-45
ED, MW 2022-01-27
15:30
Online Online [Invited Lecture] A 28GHz-Band GaN HEMT Doherty Amplifier MMIC Based on Dual-Power-Level Design Technique
Ryo Ishikawa, Takuya Seshimo, Yoichiro Takayama, Kazuhiko Honjo (UEC) ED2021-67 MW2021-109
In the 5G wireless communication system, a quasi-millimeter wave band such as the 28 GHz band is also used. Doherty powe... [more] ED2021-67 MW2021-109
pp.28-31
ED, MW 2022-01-27
16:05
Online Online [Invited Talk] Wideband Load Modulated GaN Power Amplifiers for Wireless Base-Stations
Shuichi Sakata, Yuji Komatsuzaki, Kento Saiki, Koji Yamanaka, Masaomi Tsuru (Mitsubishi Electric) ED2021-68 MW2021-110
Recently, 5G commercial services which have features of high speed, large capacity and multi-connectivity have rolled ou... [more] ED2021-68 MW2021-110
pp.32-37
RCS 2021-04-22
10:30
Online Online Digital Predistorter Using Twin-Nonlinear Two-Box Model for Digitally Assisted Ultra-Wideband GaN Amplifier
Ao Yamashita, Yuji Komatsuzaki, Hiroto Sakaki, Nobuhiko Ando, Hideyuki Nakamizo (Mitsubishi Electric) RCS2021-1
The authors have been proposing high efficiency digitally assisted ultra-wideband GaN amplifier for mobile base station ... [more] RCS2021-1
pp.1-5
EMT, MW, OPE, EST, MWP, THz, IEE-EMT [detail] 2020-07-17
14:15
Online Online Study on Series Connected Harmonic-Tuned GaN HEMT Doherty Power Amplifier for Directly Exciting a Loop Antenna of OAM communication with Balanced Mode
Masahiro Nakada, Yoichiro Takayama, Ryo Ishikawa, Kazuhiko Honjo (UEC) EMT2020-24 MW2020-33 OPE2020-19 EST2020-24 MWP2020-24
A series-connected harmonic-tuned GaN HEMT Doherty amplifier (DA) has been developed for directly exciting a loop antenn... [more] EMT2020-24 MW2020-33 OPE2020-19 EST2020-24 MWP2020-24
pp.101-106
MW, WPT 2020-04-23
16:30
Online Online Integrated power amplifier design with antenna
Asako Suzuki (Nagoya Univ.), Shunya Ban, Takase Oshima, Hiroshi Hirayama (NITech), Shinji Hara (Nagoya Univ.) WPT2020-10 MW2020-10
We propose a new method to improve the transmission efficiency of wireless power transmission system using microwaves. I... [more] WPT2020-10 MW2020-10
pp.51-54
MW 2019-11-14
14:45
Okinawa Minami Daido Villa. Tamokuteki Koryu Center A Sturdy about Efficient Design and Optimization of Bias Condition for K-Band GaN Power Amplifier
Takuma Torii, Masatake Hangai, Ryuji Inagaki, Shintaro Shinjo (Mitsubishi Electric) MW2019-104
Power Amplifier is required to have both high efficiency and linearity in satellite communication. This paper presents t... [more] MW2019-104
pp.25-28
MW 2019-11-14
15:10
Okinawa Minami Daido Villa. Tamokuteki Koryu Center A Ka-Band CW 15.5W 15.6% Fractional Bandwidth GaN Power Amplifier MMIC Using Wideband BPF Inter-stage Matching Network
Keigo Nakatani, Yutaro Yamaguchi, Masatake Hangai, Shintaro Shinjo (MitsubishiElectric) MW2019-105
This paper has reported a Ka-band 15.5W power amplifier Monolithic Microwave Integrated Circuit (MMIC) using 0.15m Gall... [more] MW2019-105
pp.29-34
MW 2019-11-14
15:35
Okinawa Minami Daido Villa. Tamokuteki Koryu Center High-Efficiency GaN HEMT Doherty Power Amplifier Based on Two-Power-Level Impedance Optimization including Harmonic Treatment
Takuya Seshimo, Yoichiro Takayama, Ryo Ishikawa, Kazuhiko Honjo (UEC) MW2019-106
Further high efficiency and high functionality of power amplifier are required for the next generation wireless communic... [more] MW2019-106
pp.35-39
MW 2019-11-14
16:00
Okinawa Minami Daido Villa. Tamokuteki Koryu Center High Efficiency Doherty Amplifier Using T-Shaped Stabs with Spurius Suppression and Impedance Conversion Function
Yuki Takagi, Naoki Hasegawa, Yoshichika Ota (SB), Ryo Ishikawa, Kazuhiko Honjo (UEC) MW2019-107
In recent years, various types of wireless stations such as a base station used on quasi-millimeter wave band have been ... [more] MW2019-107
pp.41-46
MW 2019-11-14
17:05
Okinawa Minami Daido Villa. Tamokuteki Koryu Center Multifunctional CRLH Transmission Line Stubs for Compact Class-E/Inverse-Class-E Power Amplifiers
Hirotaka Asami, Shinichi Tanaka (Shibaura Inst. of Tech.) MW2019-109
This report presents CRLH transmission line (TL) stubs for realizing compact high-efficiency class-E / inverse class-E p... [more] MW2019-109
pp.53-58
EMCJ, MW, EST, IEE-EMC [detail] 2019-10-24
10:55
Miyagi Tohoku Gakuin University(Conf. Room 2, Eng. Bldg. 1) Efficiency Enhancement of GaN Doherty Power Amplifier at Large Power Back-Off with Virtual Short Stub Technique
Satoru Honda, Shuichi Sakata, Yuji Komatsuzaki, Shintaro Shinjo (Mitsubishi Electric) EMCJ2019-40 MW2019-69 EST2019-48
We propose a new efficiency enhancement technique of Doherty power amplifiers (DPAs) using virtual short stub. In this t... [more] EMCJ2019-40 MW2019-69 EST2019-48
pp.21-25
MW, AP
(Joint)
2019-09-20
14:35
Kanagawa JAXA (Sagamihara) [Invited Talk] Onboard GaN high-power amplifier for 50-kg-class ultra-small deep-space probe "PROCYON"
Yuta Kobayashi (JAXA), Satoshi Yoshida (Kagoshima Univ.), Shigeo Kawasaki (JAXA) MW2019-61
Recently, a lot of nano- or micro-satellites have been developed and utilized for various low-earth-orbit missions. PROC... [more] MW2019-61
p.35
MW, ED 2019-01-17
15:00
Tokyo Hitachi, Central Research Lab. Pit-Assisted Ohmic Contact Technology for InAlGaN/GaN HEMTs
Yusuke Kumazaki, Shiro Ozaki, Yuichi Minoura, Kozo Makiyama, Toshihiro Ooki, Naoya Okamoto, Norikazu Nakamura (FUJITSU LABORATORIES LTD.) ED2018-77 MW2018-144
Low contact resistance was realized in InAlGaN/GaN HEMTs by the introduction of pit structures on the metal/InAlGaN inte... [more] ED2018-77 MW2018-144
pp.51-54
MW 2018-11-15
11:15
Nagasaki Fukue Cultural Hall Low distortion GaN Power Amplifier with adaptive gate bias control
Takuma Torii, Masatake Hangai, Ryuji Inagaki, Shintaro Shinjo (Mitsubishi electric) MW2018-95
In order to expand communication capability, high PAPR (Peak to Average Power Ratio) signal is used. Therefore power amp... [more] MW2018-95
pp.19-23
EST, MW, EMCJ, IEE-EMC [detail] 2018-10-18
16:35
Aomori Hachinohe Chamber of Commerce and Industry(Hachinohe city, Aomori) GaN HEMT Darlington Power Amplifier with Individual Bias Adjustment for High-Efficiency and Low-Distortion Characteristics
Atsushi Kitamura, Yoichiro Takayama, Ryo Ishikawa, Kazuhiko Honjo (UEC) EMCJ2018-45 MW2018-81 EST2018-67
Multi-transistor configurations are widely applied for improving the performance of transistor amplifiers. In the multi-... [more] EMCJ2018-45 MW2018-81 EST2018-67
pp.71-75
EST, MW, OPE, MWP, EMT, IEE-EMT, THz [detail] 2018-07-20
13:00
Hokkaido   2.45 GHz ISM-Band 450W High Efficiency GaN Pallet Amplifier for Microwave Heating
Takumi Sugitani, Kazuhiro Iyomasa, Masatake Hangai, Yoshifumi Kawamura, Jun Nishihara, Shintaro Shinjo (Mitsubishi Electric Corp.) EMT2018-39 MW2018-54 OPE2018-42 EST2018-37 MWP2018-38
In this paper, 2.45 GHz ISM-Band high power high efficiency GaN pallet amplifier for Microwave Heating is presented. To ... [more] EMT2018-39 MW2018-54 OPE2018-42 EST2018-37 MWP2018-38
pp.175-178
MW, WPT 2018-04-27
14:50
Tokyo Kikai-Shinko-Kaikan Building S-band Tx Module with Cu Pillar Interconnection Si/GaN 3D Chip Embedding Substrate
Kengo Kawasaki, Eigo Kuwata, Hidenori Ishibashi, Tomohiro Yao, Kiyoshi Ishida, Kazuhiro Maeda, Hironobu Shibata, Masaomi Tsuru, Kazutomi Mori, Mitsuhiro Shimozawa, Hiroshi Fukumoto (Mitsubishi Electric Corp.) WPT2018-5 MW2018-5
A SiGe chip and GaN chip packaged Tx module in S-band is represented. SiGe and GaN with Redistribution Layer (RDL) are i... [more] WPT2018-5 MW2018-5
pp.19-23
ED, MW 2018-01-26
09:55
Tokyo Kikai-Shinko-Kaikan Bldg. UHF-C Band Broadband Power Amplifier with Series Connected SiGe HBT and GaN HEMT
Eigo Kuwata, Kengo Kawasaki, Daisuke Tsunami, Kazuhiro Maeda, Koji Yamanaka (MELCO) ED2017-98 MW2017-167
This paper reports on a multi chips amplifier consists of Gallium Nitride High Electron Mobility Transistor (GaN HEMT) a... [more] ED2017-98 MW2017-167
pp.25-29
MW 2017-12-19
10:30
Tokyo   4.5-/4.9-GHz-Band Tunable GaN HEMT High Efficiency Power Amplifier with PIN Diode Switches.
Kazuki Mashimo, Ryo Ishikawa, Kazuhiko Honjou (Univ. of Electro-Communications) MW2017-142
For the next generation wireless communication systems, 4.5-/4.9-GHz band tunable GaN HEMT high efficiency power amplifi... [more] MW2017-142
pp.1-6
 Results 1 - 20 of 92  /  [Next]  
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