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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 10 of 10  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
EMCJ, IEE-EMC, MW, EST [detail] 2016-10-20
11:20
Miyagi Tohoku Univ. An RF Frontend Amplifier Module for High SHF Wide-band Massive MIMO in 5G
Keigo Nakatani, Shintaro Shinjo, Yuji Komatsuzaki, Jun Kamioka, Ryota Komaru, Hideyuki Nakamizo, Miyawaki Katsumi, Koji Yamanaka (Mitsubishi Electric) EMCJ2016-64 MW2016-96 EST2016-60
A highly integrated RF frontend module including a three-stage power amplifier (PA), a two-stage low noise amplifier (LN... [more] EMCJ2016-64 MW2016-96 EST2016-60
pp.25-30
SAT, SANE
(Joint)
2016-02-16
15:00
Hiroshima Hiroshima Institute of Technology Evaluation of Nonlinear Phase Distortion in X-band GaAs and GaN Power Amplifiers for Small Satellite Communication and its Effect to Multi-level Modulation
Masafmi Morimoto, Tomoya Fukami, Hiromi Watanabe (UTokyo), Hirobumi Saito (JAXA) SANE2015-110
In this paper, in order to understand AM-PM characteristics, we simulated AM-PM using equivalent circuit of FET. In addi... [more] SANE2015-110
pp.19-24
WPT, MW 2015-04-16
15:25
Tokyo Kikai-Shinko-Kaikan Bldg. Design of a 60GHz InGaAs HEMT class-F power amplifier with reactive negative feedback
Kunihiko Watanabe, Yohtaro Umeda (Tokyo Univ. of Science), Tomohiro Yoshida, Tetsuya Suemitsu (Tohoku Univ.) WPT2015-4 MW2015-4
In this paper, InGaAs HEMT 60GHz Class-F power amplifier (PA) with reactive negative feedback is designed and simulated.... [more] WPT2015-4 MW2015-4
pp.15-19
OPE, LQE 2014-12-19
12:05
Tokyo Kikai-Shinko-Kaikan, NTT Atsugi R&D center [Encouragement Talk] InGaAs photodetectors based on photonic crystal waveguide including ultrasmall buried heterostructure
Kengo Nozaki, Shinji Matsuo, Takuro Fujii, Koji Takeda, Eiichi Kuramochi, Masaya Notomi (NTT) OPE2014-145 LQE2014-132
Ultrasmall InGaAs photodetectors based on a photonic crystal waveguide with a buried heterostructure (BH) were demonstra... [more] OPE2014-145 LQE2014-132
pp.31-35
ED, MW 2012-01-12
10:35
Tokyo Kikai-Shinko-Kaikan Bldg Low-Turn-on-Voltage Double Heterojunction Bipolar Transistors with a Narrow-Band-Gap InGaAsSb Base Grown by Metalorganic Chemical Vapor Deposition
Takuya Hoshi, Hiroki Sugiyama, Haruki Yokoyama, Kenji Kurishima, Minoru Ida (NTT) ED2011-130 MW2011-153
Because of the significant increase of data traffic, there is now a strong demand for reducing the power consumptions of... [more] ED2011-130 MW2011-153
pp.63-68
CAS 2011-01-25
13:45
Kumamoto Kumamoto University Device Modeling for Millimeter-wave Power Amplifiers
Willy Hioe, Hideyuki Nagaishi, Kenji Kogo, Masami Onishi, Takashi Ogawa (Hitachi) CAS2010-87
Modeling of devices that have significant physical sizes compared to the wavelength of the application frequency, such a... [more] CAS2010-87
pp.17-21
SANE 2007-04-16
13:25
Overseas ARRC(Perth) A C-Band 500W Solid-State Power Amplifier using 90W GaAs FETs
Kazuhiro Kanto, Akihiro Satomi, Yasuaki Asahi, Shinji Takatsuka, Hideki Kimura, Hiroshi Kajio (Toshiba) SANE2007-16
More than 500W of peak output power (pulse width 400μs, duty 20%) and over 27dB of power gain are achieved with newly de... [more] SANE2007-16
pp.85-90
MW, ED 2007-01-19
09:45
Tokyo Kikai-Shinko-Kaikan Bldg. A 2.4-V Reference Voltage Operation InGaP-HBT MMIC Power Amplifier for CDMA Handsets
Takao Moriwaki, Kazuya Yamamoto, Nobuyuki Ogawa, Takeshi Miura, Kosei Maemura, Teruyuki Shimura (Mitsubishi Electric)
This paper describes circuit design and measurement results of a newly developed InGaP/GaAs HBT MMIC power amplifier mod... [more] ED2006-226 MW2006-179
pp.143-148
MW, ED 2007-01-19
10:35
Tokyo Kikai-Shinko-Kaikan Bldg. A 3.5 GHz low distortion high powr FET using GaAs on-chip harmonic tuning circuit
Seiki Goto, Tetsuo Kunii, Akira Inoue (Mitsubishi Electric Corp.), Toshikazu Oue (WTI), Masaki Kohno, Tomoki Oku, Takahide Ishikawa (Mitsubishi Electric Corp.)
An ultra low distortion class-F power amplifier for 3.5GHz base stations of broadband access systems is presented. The f... [more] ED2006-228 MW2006-181
pp.155-160
MW 2005-12-16
14:00
Hiroshima   A Tri-band GaAs FET Power Amplifier Using Lumped Elements
Koji Uchida, Yoichiro Takayama, Takayuki Fujita, Kazusuke Maenaka (Univ. of Hyogo)
Tri-band GaAs FET power amplifiers with a single transistor using lumped element matching circuits are designed and fabr... [more] MW2005-137
pp.55-60
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