A study on Ar/N2-plasma sputtering gas pressure dependence on the LaBxNy insulator formation for non-volatile memory applications ○Eun-Ki Hong・Shun-ichiro Ohmi(Tokyo Tech.) SDM2021-46
The optimum physical targets of the 3-dimensional vertical FG NAND flash memory cell arrays with the extended sidewall control gate (ESCG) structure ○Moon-Sik Seo(Tohoku Univ.)・Tetsuo Endoh(Tohoku Univ./JST) ED2010-101 SDM2010-102
Recently, the 3-dimensional vertical Floating Gate (FG) NAND... [more]