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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2016-01-28
15:50		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Super Steep Subthreshold Slope PN-Body Tied SOI FET with Ultra Low Drain Voltage
Jiro Ida (Kanazawa Institute of Technology) SDM2015-127		 We have proposed the new type super steep subthreshold slope (SS) device of the PN-body tied SOI FET. The N region is in... [more] SDM2015-127
pp.31-34
SDM, ICD 2013-08-01
09:00		 Ishikawa Kanazawa University Analysis of Steep Subthreshold Slope Characteristics in SOI MOSFET
Takayuki Mori, Jiro Ida (Kanazawa Inst. of Tech.) SDM2013-65 ICD2013-47		 We have found out that the steep Subthreshold Slope (SS) appears in the Floating-Body (FB) and the Body-Tied (BT) SOI MO... [more] SDM2013-65 ICD2013-47
pp.1-6
ED, SDM 2010-07-02
15:05		 Tokyo Tokyo Inst. of Tech. Ookayama Campus Impact of Floating Body type DRAM with the Vertical MOSFET
Yuto Norifusa, Tetsuo Endoh (Tohoku Univ./JST) ED2010-98 SDM2010-99		 Several kinds of capacitor-less DRAM cells based on planar SOI-MOSFET technology have been proposed and researched to ov... [more] ED2010-98 SDM2010-99
pp.211-216
RECONF 2005-05-13
11:30		 Kyoto Kyoto University Developing a parallel reconfigurable system for physics computations
Tsuyoshi Hamada, Naohito Nakasato (RIKEN) 		We have developped PROGRAPE-3P1, a reconfigurable system for particle based simulations. The peak spead of PROGRAPE-3P1 ... [more] RECONF2005-20
pp.31-36
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