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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| IN | 2023-01-20 09:50 |
Aichi | Aichi Industry & Labor Center (Primary: On-site, Secondary: Online) |
Community Detection in Multi-Layer Networks with Controlled Reflection of Layers Shuhei Nakano, Tsuyoshi Yamashita, Naoki Matsumoto, Kunitake Kaneko (Keio Univ.)  IN2022-62 |
Community detection in multi-layer networks has put an emphasis on identifying the idel reflection of layers. However, t... [more] | IN2022-62 pp.64-71 |
| VLD, DC, CPSY, RECONF, CPM, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC (Joint) [detail] |
2018-12-06 15:45 |
Hiroshima | Satellite Campus Hiroshima | Design method of millimeter wave CMOS amplifier circuit with flat frequency characteristics Shota Kohara, Shuhei Amakawa, Takeshi Yoshida, Minoru Fujishima (Hiroshima Univ.) CPM2018-90 ICD2018-51 IE2018-69 |
High-speed wireless communication using a wideband in the millimeter wave is expected. In order to realize this, millime... [more] | CPM2018-90 ICD2018-51 IE2018-69 pp.13-16 |
| SDM | 2018-10-17 16:05 |
Miyagi | Niche, Tohoku Univ. | Fabrication process of Hf-based MONOS nonvolatile memory with Si(100) surface flattening process Sohya Kudoh, Yusuke Horiuchi, Shun-ichiro Ohmi (Tokyo Tech.) SDM2018-55 |
We have reported nonvolatile memory characteristics of Hf-based MONOS diodes were improved by using atomically flat Si(1... [more] | SDM2018-55 pp.15-19 |
| VLD, HWS (Joint) |
2018-02-28 14:20 |
Okinawa | Okinawa Seinen Kaikan | Development of Loop Flattening Tool that Reduces Cycle Overhead in Loop Pipelining of Nested Loops in High Level Synthesis Daisuke Ishikawa, Kenshu Seto (TCU) VLD2017-97 |
We develop a loop flattening tool for designing hardware with high level synthesis. When loop pipelining is applied to ... [more] | VLD2017-97 pp.49-54 |
| SDM | 2017-10-25 14:50 |
Miyagi | Niche, Tohoku Univ. | Experimental Investigation of Localized Stress Induced Leakage Current Distribution and its Decrease by Atomically Flattening Process Hyeonwoo Park, Rihito Kuroda, Tetsuya Goto, Tomoyuki Suwa, Akinobu Teramoto, Daiki Kimoto, Shigetoshi Sugawa (Tohoku Univ) SDM2017-51 |
Stress Induced Leakage Current (SILC) distributions of a large number of small nMOS transistors with different gate size... [more] | SDM2017-51 pp.9-14 |
| SDM | 2017-10-25 15:20 |
Miyagi | Niche, Tohoku Univ. | Si surface atomically flattening process with chemical oxide passivation for Ar/H2 annealing and Hf-based MONOS device application Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech.) SDM2017-52 |
MONOS type nonvolatile memory is a promising candidate to replace the floating gate type nonvolatile memory (NVM). It w... [more] | SDM2017-52 pp.15-19 |
| SDM | 2016-10-27 11:15 |
Miyagi | Niche, Tohoku Univ. | Effect of Si surface flatness on electrical characteristics of Hf-based MONOS structure Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech) SDM2016-76 |
MONOS type nonvolatile memory is a promising candidate to replace floating gate type nonvolatile memory. In this study,... [more] | SDM2016-76 pp.39-44 |
| SDM | 2015-10-29 14:50 |
Miyagi | Niche, Tohoku Univ. | A study on Si surface flattening process by annealing Ar/H2ambient Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech) SDM2015-72 |
It has been reported that the atomically flat surface of Si(100) is able to be obtained by annealing in ultra-pure Ar am... [more] | SDM2015-72 pp.7-12 |
| SDM | 2015-10-29 15:20 |
Miyagi | Niche, Tohoku Univ. | Ultra-Low Temperature Flattening Technique of Silicon Surface Using Xe/H2 Plasma Tomoyuki Suwa, Akinobu Teramoto, Tetsuya Goto, Masaki Hirayama, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2015-73 |
In order to flatten any crystal orientation of Si surface including Si-fin-structure and to introduce the flattening pro... [more] | SDM2015-73 pp.13-16 |
| SP, ASJ-H | 2014-10-23 14:00 |
Wakayama | Nanki Shirahama Onsen Hotel Seamore | Pre-processing for vocal tract area function estimation using linear prediction analysis Kinuyo Isa, Shoki Yoshimoto, Ryuichi Nisimura, Toshio Irino, Hideki Kawahara (Wakayama Univ.) SP2014-79 |
Estimaiton of vocal tract area function based on linear predictive analysis suffers from biasing factors such as glottal... [more] | SP2014-79 pp.27-28 |
| SDM | 2014-10-16 15:20 |
Miyagi | Niche, Tohoku Univ. | A study on Si surface flattening process utilizing atmospheric annealing system Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech) SDM2014-86 |
It has been reported that the atomically flat surface of Si(100) is able to be obtained by annealing in ultra-pure Ar am... [more] | SDM2014-86 pp.13-17 |
| MI | 2014-01-26 13:30 |
Okinawa | Bunka Tenbusu Kan | 3-D Cerebral Sulci Registration of Neonatal Brain MRI Using Sulcal-Distribution Index Kento Morita (Univ. of Hyogo), Syoji Kobashi, Kei Kuramoto (Univ. of Hyogo/Osaka Univ.), Yuki Wakata, Kumiko Ando, Reiichi Ishikura (Hyogo College of Medicine), Tomomoto Ishikawa (Ishikawa Hospital), Shozo Hirota (Hyogo College of Medicine), Yutaka Hata (Univ. of Hyogo/Osaka Univ.) MI2013-65 |
MR image registration (IR) has been used in brain function analysis, voxel-based-morphometry, etc. The conventional IR m... [more] | MI2013-65 pp.53-58 |
| ED, SDM | 2010-07-02 12:15 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | High Integrity Gate Insulator Films on Atomically Flat Silicon Surface Xiang Li, Rihito Kuroda, Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) ED2010-93 SDM2010-94 |
A low temperature atomically flattening technology for Si(100) wafer is developed. By annealing in ultra pure argon ambi... [more] | ED2010-93 SDM2010-94 pp.183-188 |
| AP, SAT (Joint) |
2006-05-18 10:15 |
Kagoshima | Kagoshima Univ. | Effect of Mountainous Terrain on Radio Propagation Keita Fukasawa, Eiichi Oka, Yoshinari Kawaguchi (Meiji Univ.) AP2006-12 |
In this report, we simulate the effect of Mountainous Terrain on Radio Propagation by the numerical analysis with finite... [more] | AP2006-12 pp.17-22 |
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