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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MRIS, ITE-MMS | 2021-10-08 14:30 |
Online | Online | [Invited Talk]
First principles calculations and material design of multilayer films with spin-orbit induced magnetic phenomena Kohji Nakamura, Kenji Nawa (Mie Univ.)  MRIS2021-8 |
Multilayer thin film materials with desired magnetic, electric and optical properties involving spin-orbit coupling inte... [more] | MRIS2021-8 pp.11-12 |
| SDM | 2020-11-19 14:10 |
Online | Online | [Invited Talk]
Prediction model of dielectric constants of perovskite-type oxides by first-principles calculations and materials informatics Yusuke Noda (Kanazawa Gakuin Univ.) SDM2020-25 |
The aim of this study is to clarify the relationship between the dielectric constants and other physical and chemical pr... [more] | SDM2020-25 pp.15-20 |
| OME | 2017-12-28 14:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Investigation of interactions between Pt atom and carbon supports by a first-principles calculation Yuta Nakajo (Tokyo Univ. Science), Teruyasu Mizoguchi (The University of Tokyo), Yasuhito Sugano, Masaru Yoshitake, Yumi Tanaka (Tokyo Univ. Science) OME2017-52 |
To estimate interactions between carbon supports and Pt, which affects the catalytic activity of carbon-supported Pt nan... [more] | OME2017-52 pp.15-18 |
| SDM | 2017-11-09 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Multri-Physics Simulation of GaN MOVPE Growth Kenji Shiraishi, Kazuki Sekiguchi, Kenta Chokawa, Hiroki Shirakawa, Kento Kawakami, Yoshihiro Yamamoto, Masaaki Araidai, Naoya Okamoto, Katsumori Yoshimatsu (Nagoya Univ.), Yoshihiro Kangawa, Koichi Kakimoto (Kyushu Univ.) SDM2017-61 |
In conventional GaN growth simulations, it has been believed that tri-methyl-gallium (TMG) first react with ammonia form... [more] | SDM2017-61 pp.1-4 |
| SDM, EID | 2016-12-12 13:30 |
Nara | NAIST | First-Principles Calculation Studies of Resistive Switching Mechanism in Polycrystalline Metal Oxide Film Takumi Moriyama, Sohta Hida (Tottori Univ.), Takahiro Yamasaki, Takahisa Ohno (NIMS), Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) EID2016-18 SDM2016-99 |
For practical use of Resistive Random Access Memory (ReRAM), clarifying physical properties of conducting path created i... [more] | EID2016-18 SDM2016-99 pp.41-44 |
| SDM | 2016-11-11 14:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Application of DFT Calculation for the Development of High Quality Si and Ge Substrates
-- From Ultra Large Diameter Crystal Pulling to Metal Gettering -- Koji Sueoka (Okayama Pref. Univ.) SDM2016-87 |
During the last decade, considerable progress has been made in understanding the properties and behavior of the vacancy ... [more] | SDM2016-87 pp.49-54 |
| SDM, EID | 2014-12-12 17:45 |
Kyoto | Kyoto University | Study on Formative Mechanism of Conductive Path in Resistive Random Access Memory (ReRAM)
-- Analyses of Various NiO Surface States Using Ab Initio Calculations -- Takumi Moriyama (Tottori Univ.), Takahiro Yamasaki, Takahisa Ohno (NIMS), Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) EID2014-39 SDM2014-134 |
For practical use of Resistive Random Access Memory (ReRAM), clarifying physical properties of conducting path created i... [more] | EID2014-39 SDM2014-134 pp.135-138 |
| SDM | 2014-11-07 10:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Stress and Doping Impact on Intrinsic Point Defect Behaviour in Growing Single Crystal Silicon Koji Sueoka, Eiji Kamiyama, Kozo Nakamura (Okayama Pref. Univ.), Jan Vanhellemont (Ghent Univ.) SDM2014-104 |
For the mass-production of 450 mm-diameter defect-free Si crystals, one has to take into account the impact of thermal s... [more] | SDM2014-104 pp.47-52 |
| SDM | 2014-06-19 10:30 |
Aichi | VBL, Nagoya Univ. | Stability of vacancy defect around metal/Ge interfaces; first-principles study Shogo Sasaki, Takashi Nakayama (Chiba Univ.) SDM2014-46 |
It is well known that Ge has high density of vacancy defects compared to Si. Vacancy defects often change electronic pro... [more] | SDM2014-46 pp.17-20 |
| CPM, ED, SDM | 2014-05-28 15:35 |
Aichi | First-principles simulation on electron-scattering process in magnetoresistive memory Masaaki Araidai (Nagoya Univ.), Takahiro Yamamoto (Tokyo Univ. of Sci.), Kenji Shiraishi (Nagoya Univ.) ED2014-27 CPM2014-10 SDM2014-25 |
Magnetoresistance memory is expected as emerging memory device due to the desired functions such as non-volatility, fast... [more] | ED2014-27 CPM2014-10 SDM2014-25 pp.47-50 |
|
| SDM | 2013-11-14 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Role of Computational Sciences in Design of Modern Electron Devices Kenji Shiraishi (Nagoya Univ.) SDM2013-101 |
Recent computational science plays important roles in development of new materials and modern electron devices. Among th... [more] | SDM2013-101 pp.9-14 |
| SDM | 2013-11-14 13:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Atomistic Study of Sulfur Diffusion and S2 Formation in Silicon during Low-temperature Rapid Thermal Annealing Takahisa Kanemura, Koichi Kato, Hiroyoshi Tanimoto, Nobutoshi Aoki, Yoshiaki Toyoshima (Toshiba) SDM2013-102 |
Sulfur doping at NiSi/Si junction has been found to make a Schottky barrier height ultimately small, revealing almost ze... [more] | SDM2013-102 pp.15-20 |
| SDM | 2012-06-21 13:35 |
Aichi | VBL, Nagoya Univ. | Surface Segregation Behavior of B, Ga, Sb, and As Dopant Atoms on Ge(100) and Ge(111) Examined with a First-principles Method Fumiya Iijima, Kentaro Sawano (TCU), Jiro Ushio (CRL), Takuya Maruizumi, Yasuhiro Shiraki (TCU) SDM2012-52 |
To understand surface segregation behaviour of B, Ga, As, and Sb dopant atoms on Ge (100) and Ge (111) surfaces, the pot... [more] | SDM2012-52 pp.47-51 |
| SDM | 2011-07-04 14:20 |
Aichi | VBL, Nagoya Univ. | Schottky-barrier change by structural disorders at metal/Si interfaces: First-principles study Kyosuke Kobinata, Takashi Nakayama (Chiba Univ.) SDM2011-62 |
Schottky-barrier changes by the structural disorders are studied using the first-principles calculations and adopting Au... [more] | SDM2011-62 pp.69-73 |
| ED, SDM | 2010-07-02 15:50 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | Theoretical Study of the Hydrogen Effect on the Program/Erase Cycle of MONOS-Type Memories Akira Otake, Keita Yamaguchi, Kenji Shiraishi (Univ. of Tsukuba.) ED2010-100 SDM2010-101 |
Due to the aggressive scaling of non-volatile memories, “charge-trap memories” such as MONOS type memories are inevitabl... [more] | ED2010-100 SDM2010-101 pp.221-224 |
| ED, LQE, CPM | 2009-11-19 14:20 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | Theoretical Studies on the Characteristic Electronic Structures of In-Containint Nitride Seimiconductors Based of the First Principles Calculations Kenji Shiraishi, Jun-ichi Iwata (Univ. of Tsukuba/JST), Teruaki Obata (Univ. of Tsukuba), Atsushi Oshiyama (Univ. of Tokyo/JST) ED2009-138 CPM2009-112 LQE2009-117 |
In-containing nitride semiconductors exhibit characteristic behavior which can be ascribed to the large difference in th... [more] | ED2009-138 CPM2009-112 LQE2009-117 pp.47-50 |
| SDM | 2009-06-19 10:20 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | First-Principles Calculations for Interfacial Reaction during Si Oxidation Toru Akiyama (Mie Univ.), Hiroyuki Kageshima (NTT Corp.), Masashi Uematsu (Keio Univ.), Tomonori Ito (Mie Univ.) SDM2009-28 |
The interfacial reaction processes during Si oxidation are investigated based on first-principles total-energy electroni... [more] | SDM2009-28 pp.9-13 |
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