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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 29  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2024-01-31
15:50
Tokyo KIT Toranomon Graduate School
(Primary: On-site, Secondary: Online)
[Invited Talk] Physical Reservoir Computing using HZO-based FeFETs for Edge-AI Applications
Shin-ichi Takagi, Kasidit Toprasertpong, Eishin Nkako, Rikuo Suzuki, Shin-Yi Min, Mitsuru Takenaka, Ryosho Nakane (The Univ. of Tokyo) SDM2023-80
Physical reservoir computing (RC) using ferroelectric HfZrO2/Si FeFETs is proposed and demonstrated for application to e... [more] SDM2023-80
pp.24-27
ICD 2023-04-10
13:20
Kanagawa
(Primary: On-site, Secondary: Online)
[Invited Talk] Novel scheme of HZO/Si FeFET reservoir computing for speech recognition
Eishin Nako, Kasidit Toprasertpong, Ryosho Nakane, Mitsuru Takenaka, Shinichi Takagi (The Univ. of Tokyo) ICD2023-4
We have demonstrated reservoir computing (RC) using HZO/Si ferroelectric gate FETs (FeFETs), which realizes efficient ti... [more] ICD2023-4
p.9
SDM 2022-10-19
17:20
Online Online A study on threshold voltage control of MFSFET utilizing ferroelectric nondoped HfO2 thin films
Masakazu Tanuma, Joong-Won Shin, Shun-ichiro Ohmi (Tokyo Tech) SDM2022-63
Ferroelectric HfO2 thin films are able to be formed on Si substrate, which is difficult for conventional materials due t... [more] SDM2022-63
pp.38-42
SDM 2022-01-31
14:15
Online Online [Invited Talk] ****
Reika Ichihara (Kioxia) SDM2021-70
e establish an accurate picture of cycling degradation in HfO2-FeFET based on the dynamics of various charge-trapping re... [more] SDM2021-70
pp.9-11
SDM 2021-11-11
13:00
Online Online [Invited Talk] Prospects of HfZrO2-based FeFETs for Ultra-low Power Memory, Logic and AI Applications
Shinichi Takagi, Kasidit Toprasertpong, Xuan Luo, Eishin Nako, Zeyu Wang, Tsung-En Lee, Kento Tahara, Mitsuru Takenaka, Ryosho Nakane (U. Tokyo) SDM2021-55
Since the discovery of ferroelectricity in HfO2-based dielectric films in 2011, FeFETs using HfO2-based thin films as ga... [more] SDM2021-55
pp.13-18
SDM 2021-10-21
13:25
Online Online A study on the effect of inter layers on ferroelectric nondoped HfO2 formation
Masakazu Tanuma, Joong-Won Shin, Shun-ichiro Ohmi (Tokyo Tech.) SDM2021-47
Ferroelectric HfO_2 thin films are able to be formed on Si substrate, which is difficult for conventional materials due ... [more] SDM2021-47
pp.12-15
SDM 2021-06-22
13:50
Online Online [Memorial Lecture] Operation mechanism of Si/HZO ferroelectric FETs -- Role of MOS (MFS) interface --
Kasidit Toprasertpong, Tsung-En Lee, Zaoyang Lin, Kento Tahara, Kouhei Watanabe, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2021-23
In this talk, we will introduce our findings on the mechanisms at the MFIS interface and their impacts on the memory cha... [more] SDM2021-23
pp.7-12
SDM 2021-01-28
13:05
Online Online [Invited Talk] ****
Reika Ichihara (Kioxia) SDM2020-49
It has been known that charge trapping (Qt) reduces the effect of spontaneous polarization (Ps) in HfO2 based FeFET. Rec... [more] SDM2020-49
pp.1-2
EID, SDM, ITE-IDY [detail] 2020-12-02
16:30
Online Online Ferroelectric gate thin film transistor using oxide semiconductor Ga-Sn-O
Tomoki Fukui, Kouki Nakagawa, Mutsumi Kimura (Ryukoku Univ) EID2020-14 SDM2020-48
We fabricated a ferroelectric-gate thin-film transistor (FeTFT) with an amorphous Ga-Sn-O (GTO) channel and a ferroelect... [more] EID2020-14 SDM2020-48
pp.54-57
ICD, SDM, ITE-IST [detail] 2020-08-06
10:15
Online Online [Invited Talk] Polarization/charge coupling in Si ferroelectric FET and its impact on memory characteristics
Kasidit Toprasertpong, Zaoyang Lin, Tsung-En Lee, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2020-2 ICD2020-2
Ferroelectric FETs, where the ferroelectric material is employed as the MOSFET gate insulator, are different from conven... [more] SDM2020-2 ICD2020-2
pp.3-7
SDM 2019-11-08
09:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Device Simulation of Dynamic Behavior of Ferroelectric Field-Effect Transistors
Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Hiroyuki Ota, Shinji Migita, Hidehiro Asai (AIST) SDM2019-74
We propose a method to simulate the dynamic behavior of field-effect transistors (FETs) having ferroelectric materials i... [more] SDM2019-74
pp.27-32
SDM 2019-10-23
14:20
Miyagi Niche, Tohoku Univ. A study on ferroelectric non-doped HfO2 directly deposited on Si(100) substrate by introducing Hf interlayer
Masakazu Kataoka, Masaki Hayashi, Min Gee Kim, Shun-ichiro Ohmi (Tokyo Tech) SDM2019-54
In this study, we investigated suppression of SiO2 interfacial layer formation by introducing Hf interlayer to realize t... [more] SDM2019-54
pp.7-10
SDM 2019-10-23
15:40
Miyagi Niche, Tohoku Univ. Investigation of ferroelectric undoped HfO2 formation on Si(100) utilizing post metallization annealing for nonvolatile memory application
Min Gee Kim, Masakazu Kataoka, Masaki Hayashi, Rengie Mark D. Mailig, Shun-ichiro Ohmi (Tokyo Tech.) SDM2019-56
In this study, post metallization annealing (PMA) for the ferroelectric undoped HfO2 deposited on Si(100) was investigat... [more] SDM2019-56
pp.17-20
SDM 2019-01-29
09:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Multidomain Dynamics of Ferroelectric Polarization in Negative Capacitance State and its Impacts on Performances of Field-Effect Transistors
Hiroyuki Ota, Tsutomu Ikegami, Koichi Fukuda, Junichi HattoriI, Hidehiro Asai, Kazuhiko Endo, Shinji Migita (AIST), Akira Toriumi (The Univ. of Tokyo) SDM2018-81
In this paper, we clarified the multidomain dynamics of ferroelectric polarization in the Negative Capacitance Field-Eff... [more] SDM2018-81
pp.1-4
SDM 2019-01-29
09:55
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Assessment of Steep-Subthreshold Swing Behaviors in Ferroelectric Field-Effect Transistors
Shinji Migita, Hiroyuki Ota (AIST), Akira Thorium (U. Tokyo) SDM2018-82
Steep-subthreshold swing (steep-SS) behaviors are observable in recent ferroelectric-gate field-effect transistors (FE-F... [more] SDM2018-82
pp.5-8
SDM 2019-01-29
11:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] The Relationship between Polarization Switching and Subthreshold Behavior in HfO2-based Ferroelectric and Anti-ferroelectric FET: An Experimental Study
Chengji Jin, Kyungmin Jang, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi (Univ. of Tokyo) SDM2018-84
We have experimentally studied and revealed the direct relationship between polarization switching and subthreshold char... [more] SDM2018-84
pp.13-16
SDM 2019-01-29
13:20
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Highly Reliable Ferroelectric Hf0.5Zr0.5O2 Film with Al Nanoclusters Embedded by Sub-Monolayer Doping Technique
Tadashi Yamaguchi, Tiantian Zhang, Kazuyuki Omori, Yasuhiro Shimada, Yorinobu Kunimune, Takashi Ide, Masao Inoue, Masazumi Matsuura (Renesas) SDM2018-86
Highly reliable ferroelectric (FE) Hf0.5Zr0.5O2 (HZO) film with Al nanoclusters embedded by sub-monolayer doping techniq... [more] SDM2018-86
pp.21-26
SDM 2018-11-09
14:20
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Device Simulation of Field-Effect Transistor Using Ferroelectric Negative Capacitance
Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Hiroyuki Ota, Shinji Migita, Hidehiro Asai (AIST) SDM2018-74
We consider the method to simulate negative-capacitance field-effect transistors (NC FETs) harnessing negative capacitan... [more] SDM2018-74
pp.47-52
SDM 2017-01-30
11:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Fully Coupled 3-D Device Simulation of Negative Capacitance FinFETs for Sub 10 nm Integration
Hiroyuki Ota, Tsutomu Ikegami, Junichi Hattori, Koichi Fukuda, Shinji Migita (AIST), Akira Toriumi (The Univ. of Tokyo) SDM2016-133
Subthreshold operation of negative capacitance FinFETs (NC-FinFETs) at sub 10 nm gate length are analyzed with a newly d... [more] SDM2016-133
pp.13-16
SDM 2017-01-30
15:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] General relationship for cation and anion doping effects on ferroelectric HfO2 formation
Xu Lun, Shibayama Shigehisa, Izukashi Kazutaka, Nishimura Tomonori, Yajima Takeaki (Univ. of Tokyo), Migita Shinji (AIST), Toriumi Akira (Univ. of Tokyo) SDM2016-137
This work discusses the general relationship for cation and anion doping effects on the HfO2 para-/ferroelectric transit... [more] SDM2016-137
pp.29-32
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