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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2021-06-22 13:10 |
Online | Online | [Memorial Lecture]
Modification of states of metal copper and copper oxide due to isopropyl alcohol treatment Takezo Mawaki (Tohoku Univ.), Akinobu Teramoto (Hiroshima Univ.), Katsutoshi Ishii (Tokyo Electron Technology Solutions), Yoshinobu Shiba, Tomoyuki Suwa (Tohoku Univ.), Shuji Azumo, Akira Shimizu, Kota Umezawa (Tokyo Electron Technology Solutions), Rihito Kuroda, Yasuyuki Shirai, Shigetoshi Sugawa (Tohoku Univ.)  SDM2021-22 |
The reduction of copper oxide by isopropyl alcohol (IPA) gas and its mechanism were investigated toward the selective pr... [more] | SDM2021-22 pp.1-6 |
| SDM | 2020-10-22 14:50 |
Online | Online | Modification of states of copper and copper oxide due to IPA treatment Takezo Mawaki (Tohoku Univ.), Akinobu Teramoto (Hiroshima Univ.), Katsutoshi Ishii (Tokyo Electron Technology Solutions), Yoshinobu Shiba, Tomoyuki Suwa (Tohoku Univ.), Shuji Azumo, Akira Shimizu, Kota Umezawa (Tokyo Electron Technology Solutions), Rihito Kuroda, Yasuyuki Shirai, Shigetoshi Sugawa (Tohoku Univ.) SDM2020-19 |
The reduction of copper oxide by isopropyl alcohol (IPA) gas and its mechanism were investigated toward the selective pr... [more] | SDM2020-19 pp.25-29 |
| ED, CPM, SDM | 2018-05-24 15:25 |
Aichi | Toyohashi Univ. of Tech. (VBL) | The characterization of GaN homo-epitaxial layers grown on GaN substrates by using FT-IR Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida (Sciocs) ED2018-18 CPM2018-5 SDM2018-13 |
The film thickness of homo epitaxial layers on freestanding GaN substrate was characterized by using Fourier transform ... [more] | ED2018-18 CPM2018-5 SDM2018-13 pp.19-22 |
| SDM | 2016-06-29 10:00 |
Tokyo | Campus Innovation Center Tokyo | [Invited Lecture]
Effects of top TiN deposition and annealing process on electrical and physical properties of ferroelectric HfSiO MIM capacitor Yuuichi Kamimuta, Shosuke Fujii, Riichiro Takaishi, Tsunehiro Ino, Yasushi Nakasaki, Masumi Saitoh, Masato Koyama (Toshiba) SDM2016-32 |
We have investigated the effect of top TiN deposition process and annealing temperature on physical and electrical prope... [more] | SDM2016-32 pp.1-4 |
| ED | 2011-07-30 10:15 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | Highly efficient dye-sensitized solar cells by dye adsorption method with high-temperature solvent Akinobu Ishida, Hiroki Yoshida, Katsuaki Momiyama, Takahiko Suzuki, Fumihiko Hirose (Yamagata Univ) ED2011-49 |
(To be available after the conference date) [more] | ED2011-49 pp.59-62 |
| EID, ITE-IDY, IEE-EDD, IEIJ-SSL | 2011-01-29 09:55 |
Kochi | Kochi University of Technology | Deposition of Insulator Film with New Facing Electrodes CVD for Low Temperature Devices Tokiyoshi Matsuda, Mamoru Furuta, Takahiro Hiramatsu, Hiroshi Furuta, Takashi Hirao (Kochi Univ. of Technol.) EID2010-35 |
Insulating SiO_{\it x} film was deposited at low temperature with newly developed plasma source for low heat resistive s... [more] | EID2010-35 pp.87-90 |
| US | 2010-09-29 15:15 |
Miyagi | Tohoku Univ. | Study of Correlation between SiO2 Film Properties and Temperature Coefficients of Frequency in SAW Devices with SiO2/LiNbO3 Structure Satoru Matsuda, Michio Miura, Takashi Matsuda, Masanori Ueda, Yoshio Satoh (TAIYO YUDEN CO.,LTD.), Ken-ya Hashimoto (Grad. School of Eng., Chiba Univ.) US2010-53 |
In the temperature compensation SAW device with SiO2/LiNbO3 structure, SiO2 film properties (the peak width at half max... [more] | US2010-53 pp.29-32 |
| OME | 2008-11-07 13:00 |
Nagano | Seiko Epson | Polymer thin film prepared by r.f.sputtering with a polyimide target
-- Effects of powers and pressures on molecular structure and adhesion to substrate -- Akihiro Uemura, Satoru Iwamori (Kanazawa Univ.), Itsuo Nishiyama (Daipla Wintes) OME2008-58 |
[more] | OME2008-58 pp.1-5 |
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