| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| PN, EMT, OPE, EST, MWP, LQE, IEE-EMT [detail] | 2019-01-17 11:40 |
Osaka | Osaka University Nakanoshima Center | A study of deep dry etching for Photonic Crystal CirD Laser Li Zeng, Shun Mizoguchi, Xiuyu Zhang, Kento Takeuchi, Hirotake Kajii, Masato Morifuji, Akihiro Maruta, Masahiko Kondow (Osaka Univ.)  PN2018-35 EMT2018-69 OPE2018-144 LQE2018-154 EST2018-82 MWP2018-53 |
In order to fabricate a photonic crystal laser with circular defect (CirD) resonator, we study deep dry etching of GaAs ... [more] | PN2018-35 EMT2018-69 OPE2018-144 LQE2018-154 EST2018-82 MWP2018-53 pp.23-26 |
| ED | 2016-10-26 11:00 |
Mie | A verification of formation process of emitters with nano-protrusion fabricated by the field-induced oxygen etching Minoru Wakamoto, Shigekazu Nagai, Tatsuo Iwata, Kazuo Kajiwara, Koichi Hata (MIe Univ.) ED2016-54 |
Focused ion beam systems equipped with liquid metal ion source has serious problems which are pollutions of samples due ... [more] | ED2016-54 pp.51-56 |
|
| EID, SDM | 2015-12-14 11:00 |
Kyoto | Ryukoku University, Avanti Kyoto Hall | Fabrication of FinFET Structure with High Selectivity Etching Using Newly Developed SiNx Etch Gas Takashi Kojiri (Tohoku Univ./ZEON), Tomoyuki Suwa, Keiichi Hashimoto, Akinobu Teramoto, Rihito Kuroda, Shigetoshi Sugawa (Tohoku Univ.) EID2015-9 SDM2015-92 |
We evaluated the properties of newly developed SiNx etch gas (SSY525). The gas indicated high selectivity as 30 ~ 60 for... [more] | EID2015-9 SDM2015-92 pp.1-4 |
| ED | 2015-10-23 11:50 |
Aichi | Influence of height and atomic arrangement of nano-protrusion of gas field ion emitter on He-ion current Shigekazu Nagai, Shu Katoh, Tatsuo Iwata, Kazuo Kajiwara, Koichi Hata (Mie Univ.) ED2015-67 |
Gas field ion sources(GFIS) with high brightness property have serious problem on a low angular current density, so that... [more] | ED2015-67 pp.65-68 |
|
| SDM | 2013-12-13 17:40 |
Nara | NAIST | Structural Change of Silicon Carbide Surface Etched by Chlorine-Trifluoride Ryota Hori, Tomoaki Hatayama, Hiroshi Yano, Takashi Fuyuki (NAIST) SDM2013-134 |
Silicon carbide surface with 4°-off toward <11-20> was chemically etched by chlorine-trifluoride gas without plasma. The... [more] | SDM2013-134 pp.107-112 |
| SDM | 2012-12-07 10:15 |
Kyoto | Kyoto Univ. (Katsura) | Plasmaless etching of silicon carbide using chlorine based gas Tomoaki Hatayama, Ryouta Hori, Tetsuya Tamura, Hiroshi Yano, Takashi Fuyuki (NAIST) SDM2012-116 |
Silicon carbide (SiC) could be etched by a plasmaless process in chlorine based ambient over 900oC. The etch pits were f... [more] | SDM2012-116 pp.7-12 |
| ED, SDM, CPM | 2012-05-18 09:25 |
Aichi | VBL, Toyohashi Univ. of Technol. | Interface characterization of GaN-based MOS heterostructures employing ICP-etched AlGaN surfaces Zenji Yatabe, Yujin Hori, Sungsik Kim, Tamotsu Hashizume (Hokkaido Univ.) ED2012-27 CPM2012-11 SDM2012-29 |
Our aim is to investigate the effects of dry etching of AlGaN surface on interface properties of GaN-based MOS structure... [more] | ED2012-27 CPM2012-11 SDM2012-29 pp.49-52 |
| LQE, ED, CPM | 2011-11-17 13:20 |
Kyoto | Katsura Hall，Kyoto Univ. | Interface characterization of MOS structures fabricated on dry-etched GaN and AlGaN Sungsik Kim, Yujin Hori, Zenji Yatabe, Tamotsu Hashizume (Hokkaido Univ.) ED2011-78 CPM2011-127 LQE2011-101 |
We have investigated impacts of dry etching of GaN and AlGaN surfaces on interface properties of GaN-based MOS structure... [more] | ED2011-78 CPM2011-127 LQE2011-101 pp.25-28 |
| SDM | 2010-02-05 11:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Feasibility Study of 70nm Pitch Cu/Porous Low-k D/D Integration Featuring EUV Lithography toward 22nm Generation Naofumi Nakamura, Noriaki Oda, Eiichi Soda, Nobuki Hosoi, Akifumi Gawase, Hajime Aoyama, Y. Tanaka, D. Kawamura, S. Chikaki, M. Shiohara, Nobuaki Tarumi, S. Kondo, Ichiro Mori, S. Saito (SELETE) SDM2009-184 |
A feasibility study of 70 nm pitch 2-level dual damascene interconnects featuring EUV lithography is presented. Using Ru... [more] | SDM2009-184 pp.13-18 |
| ED, LQE, CPM | 2009-11-19 09:00 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | GaN Re-growth Using Ta Mask Which Etches Covering GaN Layer Kohei Hara, Yoshiki Naoi, Shiro Sakai (Univ. of Tokushima) ED2009-128 CPM2009-102 LQE2009-107 |
Two step growth of GaN is performed, and the metal which is selectively sandwiched into GaN is formed. A GaN downward is... [more] | ED2009-128 CPM2009-102 LQE2009-107 pp.1-4 |
| ED | 2009-06-11 16:50 |
Tokyo | A study on low damage dry etching for AlGaN/GaN-HEMT Masahiko Kuraguchi, Miki Yumoto, Yoshiharu Takada, Kunio Tsuda (Toshiba Corp.) ED2009-43 |
Recessed gate structure is promising to improve GaN electric devices. Low damage dry etching technique is required to fo... [more] | ED2009-43 pp.37-40 |
|
[Return to Top Page]