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Committee Date Time Place Paper Title / Authors Abstract Paper #
VLD, HWS, ICD 2024-03-01
11:15		 Okinawa
(Primary: On-site, Secondary: Online)		 Investigation of electromagnetic irradiation noise reduction by on-chip LDOs
Rikuu Hasegawa, Kazuki Monta, Takuya Wadatsumi, Takuji Miki, Makoto Nagata (Kobe Univ.) VLD2023-124 HWS2023-84 ICD2023-113		 IC chips are subject to the threat of fault injection attacks, which cause circuit malfunctions (faults) by injecting il... [more] VLD2023-124 HWS2023-84 ICD2023-113
pp.131-134
NLP, MSS
(Joint)		 2021-03-16
10:45		 Online Online Approximate formula of the mean square quantization error of golden ratio encoders
Yoshikatsu Kashiwabara, Yutaka Jitsumatsu (Kyushu Univ.) NLP2020-63		 The Golden Ratio Encoder (GRE) is a type of analog-to-digital (A/D) conversion method. GRE expands the input analog valu... [more] NLP2020-63
pp.47-52
ICD 2014-04-18
11:20		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] A 27% Active and 85% Standby Power Reduction in Dual-Power-Supply SRAM Using BL Power Calculator and Digitally Controllable Retention Circuit
Keiichi Kushida, Fumihiko Tachibana, Osamu Hirabayashi, Yasuhisa Takeyama, Atsushi Kawasumi, Azuma Suzuki, Yusuke Niki, Miyako Shizuno, Sinichi Sasaki, Tomoaki Yabe, Yasuo Unekawa (Toshiba) ICD2014-13		 This paper presents a dual-power-supply SRAM that reduces active and stand-by power from room temperature (RT) to high t... [more] ICD2014-13
pp.65-70
ICD 2013-04-12
14:20		 Ibaraki Advanced Industrial Science and Technology (AIST) [Invited Lecture] A Power-Reduction Scheme for Dual-Power-Supply SRAM Using BL Power Calculator and Digital LDO
Miyako Shizuno, Fumihiko Tachibana, Osamu Hirabayashi, Yasuhisa Takeyama, Atsushi Kawasumi, Keiichi Kushida, Azuma Suzuki, Yusuke Niki, Sinichi Sasaki, Tomoaki Yabe, Yasuo Unekawa (Toshiba) ICD2013-19		 This paper presents a dual-power-supply SRAM that reduces active and stand-by power from room temperature (RT) to high t... [more] ICD2013-19
pp.97-102
ICD, SDM 2012-08-03
13:10		 Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido A Fast-Transient-Response Digital Low-Dropout Regulator Comprising Thin-Oxide MOS Transistors in 40-nm CMOS process
Masafumi Onouchi, Kazuo Otsuga, Yasuto Igarashi, Toyohito Ikeya, Sadayuki Morita (Renesas Electronics), Koichiro Ishibashi (Univ. of Electro-Comm.), Kazumasa Yanagisawa (Renesas Electronics) SDM2012-82 ICD2012-50		 A digital low-dropout (LDO) regulator comprising only thin-oxide MOS transistors was developed. The input voltage to the... [more] SDM2012-82 ICD2012-50
pp.105-110
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