Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
CPM |
2015-08-11 11:20 |
Aomori |
|
Evaluation of interface and near-interface traps in Al-germanate/Ge structure fabricated by Radical-Enhanced ALD Hidefumi Narita (Hirosaki Univ.), Daichi Yamada, Yukio Fukuda (Tokyo Univ. of Science, Suwa), Yosuke Kanuka, Hiroshi Okamoto (Hirosaki Univ.) CPM2015-44 |
A Ge-MIS structure has attracted the attention for the candidate of a next generation device. However, improvement of th... [more] |
CPM2015-44 pp.67-70 |
SDM |
2015-06-19 09:50 |
Aichi |
VBL, Nagoya Univ. |
[Invited Lecture]
Characterization of traps in MOCVD n-GaN by capacitance transient spectroscopy Yutaka Tokuda (Aich Inst. of Technol.) SDM2015-39 |
Capacitance transient spectroscopy based on the depletion layer capacitance transients resulting from carrier emission f... [more] |
SDM2015-39 pp.5-10 |
CPM, ED, SDM |
2014-05-29 13:20 |
Aichi |
|
Deep levels near the valence band in p-type 4H-SiC epilayers with various Al concentrations Hiroki Nakane, Masashi Kato, Masaya Ichimura (NIT) ED2014-38 CPM2014-21 SDM2014-36 |
Understanding of the deep level is essential to control the carrier lifetime for ultrahigh-voltage SiC bipolar devices. ... [more] |
ED2014-38 CPM2014-21 SDM2014-36 pp.101-104 |
CPM, ED, SDM |
2014-05-29 14:20 |
Aichi |
|
Interaction between Sn and Vacancy-rerated Defects in n-type Germanium Single Crystal Wakana Takeuchi, Noriyuki Taoka, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) ED2014-41 CPM2014-24 SDM2014-39 |
Interaction between Sn and vacancy-related defects in an n-type Ge single crystal have been investigated by deep-level t... [more] |
ED2014-41 CPM2014-24 SDM2014-39 pp.113-118 |
SDM, ED, CPM |
2013-05-16 13:55 |
Shizuoka |
Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. |
Identification of defect structures forming the deep levels in 4H-SiC Hiroki Nakane, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.), Takeshi Ohshima (JAEA) ED2013-17 CPM2013-2 SDM2013-24 |
(To be available after the conference date) [more] |
ED2013-17 CPM2013-2 SDM2013-24 pp.7-12 |
SDM |
2012-12-07 14:00 |
Kyoto |
Kyoto Univ. (Katsura) |
Depth analysis of ultra-shallow junctions by photoluminescence with the aid of nano-scale wet etching Gota Murai, Masashi Okutani, Syuji Tagawa, Masahiro Yoshimoto (Kyoto Inst. Tech.), Woo Sik Yoo (WaferMasters) SDM2012-127 |
The photoluminescence (PL) intensity at room temperature increased with decreasing defect density measured by DLTS(deep ... [more] |
SDM2012-127 pp.71-76 |
ED, SDM, CPM |
2012-05-18 11:15 |
Aichi |
VBL, Toyohashi Univ. of Technol. |
Characterization of recombination centers in p-type 4H-SiC induced by low-energy electron irradiation Kazuki Yoshihara, Masashi Kato, Masaya Ichimura (NIT), Tomoaki Hatayama (NAIST), Takeshi Ohshima (JAEA) ED2012-31 CPM2012-15 SDM2012-33 |
Silicon carbide (SiC) is a promising material for high power devices with low energy loss. However we have never complet... [more] |
ED2012-31 CPM2012-15 SDM2012-33 pp.67-72 |
CPM |
2011-08-10 13:25 |
Aomori |
|
DLTS evaluation of carrier injection and emission properties in In(Ga)As stacked quantum dot structure Soitiro Suzuki, Shinya Sato, Takuro Iwasaki (Hirosaki Univ.), Takehiko Tawara, Kouta Tateno, Hideki Gotoh, Tetsuomi Sogawa (NTT), Hiroshi Okamoto (Hirosaki Univ.) CPM2011-57 |
A ten-layer quantum-dot structure with GsAsP strain-compensation layer grown by using Bi surfactant was evaluated by DLT... [more] |
CPM2011-57 pp.7-10 |
CPM |
2011-08-10 17:00 |
Aomori |
|
Evaluation of Ge-MIS structure fabricated by ECR plasma techniques by DLTS and C-t measurement Shinya Sato, Takuro Iwasaki, Soitiro Suzuki, Toshiro Ono (Hirosaki Univ.), Yukio Fukuda (Tokyo Univ. of Science, Suwa), Hiroshi Okamoto (Hirosaki Univ.) CPM2011-65 |
In recent years, a Ge-MIS structure has attracted the attention for the candidate of a next generation device. However, ... [more] |
CPM2011-65 pp.47-50 |
SDM |
2010-12-17 15:45 |
Kyoto |
Kyoto Univ. (Katsura) |
Photoluminescence and deep level transient spectroscopy study on recrystallization of ultra-shallow junction Masashi Okutani, Shuhei Takashima, Masahiro Yoshimoto (KIT), Woo Sik Yoo (WaferMasters, Inc.) SDM2010-198 |
Recrystallization of low-energy implanted ultra-shallow junctions (USJs) are characterized by photoluminescence (PL) and... [more] |
SDM2010-198 pp.73-78 |
ED, SDM |
2010-07-02 10:50 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
Characterization of deep electron levels of AlGaN grown by MOVPE Kimihito Ooyama (Hokkaido Univ./SMM), Katsuya Sugawara (Hokkaido Univ.), Hiroyuki Taketomi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Tamotsu Hashizume (Hokkaido Univ./JST) ED2010-107 SDM2010-108 |
Deep electronic levels of Al_xGa_{1-x}N (0.25 <x < 0.60) were investigated by using deep level transient spectroscopy (D... [more] |
ED2010-107 SDM2010-108 pp.249-252 |
SDM |
2009-06-19 13:40 |
Tokyo |
An401・402 Inst. Indus. Sci., The Univ. of Tokyo |
Improvement of electrical characteristics of HfO2/Ge MIS structure treated by fluorine gas and nitrogen radical Hideto Imajo, Hyun Lee, Dong-Hun Lee, Yuichi Yoshioka, Takeshi Kanashima, Masanori Okuyama (Osaka Univ.) SDM2009-34 |
The electrical properties and interface states have been improved by fluorine treatment on Ge, but there was a problem w... [more] |
SDM2009-34 pp.45-50 |
SDM |
2008-12-05 16:10 |
Kyoto |
Kyoto University, Katsura Campus, A1-001 |
Electrical characterization of HfO2/Ge MIS structure treated by fluorine gas Hideto Imajo, Hyun Lee, Yuichi Yoshioka, Takeshi Kanashima, Masanori Okuyama (Osaka Univ.) SDM2008-195 |
High-k/Ge MIS is expected as gate structure of the next-generation FET which has high mobility. However, electrical perf... [more] |
SDM2008-195 pp.59-64 |
CPM, ED, SDM |
2008-05-16 15:30 |
Aichi |
Nagoya Institute of Technology |
Characterization of deep levels in undoped 6H-SiC by Current Deep-Level Transient Spectroscopy method Kosuke Kito, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech) ED2008-21 CPM2008-29 SDM2008-41 |
We characterized deep levels that influence a semi-insulating property by current-voltage, capacitance-voltage and curre... [more] |
ED2008-21 CPM2008-29 SDM2008-41 pp.101-106 |
CPM, ED, LQE |
2007-10-12 13:50 |
Fukui |
Fukui Univ. |
Electrical characterization of homoepitaxially-grown pn GaN diodes Yutaka Tokuda, Youichi Matsuoka, Takeshi Seo (Aichi Inst. Tech.), Hiroyuki Ueda, Osamu Ishiguro, Narumasa Soejima, Tetsu Kachi (Toyota Central R&D Labs. Inc.) ED2007-173 CPM2007-99 LQE2007-74 |
We report the electrical characterization of homoepitaxially-grown pn GaN by MOCVD on free-standing GaN substrates. The... [more] |
ED2007-173 CPM2007-99 LQE2007-74 pp.85-88 |
ED, SDM |
2007-06-25 15:30 |
Overseas |
Commodore Hotel Gyeongju Chosun, Gyeongju, Korea |
Characterization of plasma etching effects on p-type GaN by capacitance measurements of Schottky diodes Masashi Kato, Kazuki Mikamo, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs.) |
Gallium Nitride (GaN) is a promising semiconductor material for high-power devices. For realization of the high-power de... [more] |
|
SDM, ED, CPM |
2007-05-25 11:20 |
Shizuoka |
Shizuoka Univ. |
Characterization of plasma etching effects on GaN by electrical measurements of Schottky diodes Masashi Kato, Kazuki Mikamo, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs. Inc.) |
Gallium Nitride (GaN) is a promising semiconductor material for high-power devices. For realization of the high-power de... [more] |
|