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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 17 of 17  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM 2015-08-11
11:20
Aomori   Evaluation of interface and near-interface traps in Al-germanate/Ge structure fabricated by Radical-Enhanced ALD
Hidefumi Narita (Hirosaki Univ.), Daichi Yamada, Yukio Fukuda (Tokyo Univ. of Science, Suwa), Yosuke Kanuka, Hiroshi Okamoto (Hirosaki Univ.) CPM2015-44
A Ge-MIS structure has attracted the attention for the candidate of a next generation device. However, improvement of th... [more] CPM2015-44
pp.67-70
SDM 2015-06-19
09:50
Aichi VBL, Nagoya Univ. [Invited Lecture] Characterization of traps in MOCVD n-GaN by capacitance transient spectroscopy
Yutaka Tokuda (Aich Inst. of Technol.) SDM2015-39
Capacitance transient spectroscopy based on the depletion layer capacitance transients resulting from carrier emission f... [more] SDM2015-39
pp.5-10
CPM, ED, SDM 2014-05-29
13:20
Aichi   Deep levels near the valence band in p-type 4H-SiC epilayers with various Al concentrations
Hiroki Nakane, Masashi Kato, Masaya Ichimura (NIT) ED2014-38 CPM2014-21 SDM2014-36
Understanding of the deep level is essential to control the carrier lifetime for ultrahigh-voltage SiC bipolar devices. ... [more] ED2014-38 CPM2014-21 SDM2014-36
pp.101-104
CPM, ED, SDM 2014-05-29
14:20
Aichi   Interaction between Sn and Vacancy-rerated Defects in n-type Germanium Single Crystal
Wakana Takeuchi, Noriyuki Taoka, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) ED2014-41 CPM2014-24 SDM2014-39
Interaction between Sn and vacancy-related defects in an n-type Ge single crystal have been investigated by deep-level t... [more] ED2014-41 CPM2014-24 SDM2014-39
pp.113-118
SDM, ED, CPM 2013-05-16
13:55
Shizuoka Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. Identification of defect structures forming the deep levels in 4H-SiC
Hiroki Nakane, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.), Takeshi Ohshima (JAEA) ED2013-17 CPM2013-2 SDM2013-24
(To be available after the conference date) [more] ED2013-17 CPM2013-2 SDM2013-24
pp.7-12
SDM 2012-12-07
14:00
Kyoto Kyoto Univ. (Katsura) Depth analysis of ultra-shallow junctions by photoluminescence with the aid of nano-scale wet etching
Gota Murai, Masashi Okutani, Syuji Tagawa, Masahiro Yoshimoto (Kyoto Inst. Tech.), Woo Sik Yoo (WaferMasters) SDM2012-127
The photoluminescence (PL) intensity at room temperature increased with decreasing defect density measured by DLTS(deep ... [more] SDM2012-127
pp.71-76
ED, SDM, CPM 2012-05-18
11:15
Aichi VBL, Toyohashi Univ. of Technol. Characterization of recombination centers in p-type 4H-SiC induced by low-energy electron irradiation
Kazuki Yoshihara, Masashi Kato, Masaya Ichimura (NIT), Tomoaki Hatayama (NAIST), Takeshi Ohshima (JAEA) ED2012-31 CPM2012-15 SDM2012-33
Silicon carbide (SiC) is a promising material for high power devices with low energy loss. However we have never complet... [more] ED2012-31 CPM2012-15 SDM2012-33
pp.67-72
CPM 2011-08-10
13:25
Aomori   DLTS evaluation of carrier injection and emission properties in In(Ga)As stacked quantum dot structure
Soitiro Suzuki, Shinya Sato, Takuro Iwasaki (Hirosaki Univ.), Takehiko Tawara, Kouta Tateno, Hideki Gotoh, Tetsuomi Sogawa (NTT), Hiroshi Okamoto (Hirosaki Univ.) CPM2011-57
A ten-layer quantum-dot structure with GsAsP strain-compensation layer grown by using Bi surfactant was evaluated by DLT... [more] CPM2011-57
pp.7-10
CPM 2011-08-10
17:00
Aomori   Evaluation of Ge-MIS structure fabricated by ECR plasma techniques by DLTS and C-t measurement
Shinya Sato, Takuro Iwasaki, Soitiro Suzuki, Toshiro Ono (Hirosaki Univ.), Yukio Fukuda (Tokyo Univ. of Science, Suwa), Hiroshi Okamoto (Hirosaki Univ.) CPM2011-65
In recent years, a Ge-MIS structure has attracted the attention for the candidate of a next generation device. However, ... [more] CPM2011-65
pp.47-50
SDM 2010-12-17
15:45
Kyoto Kyoto Univ. (Katsura) Photoluminescence and deep level transient spectroscopy study on recrystallization of ultra-shallow junction
Masashi Okutani, Shuhei Takashima, Masahiro Yoshimoto (KIT), Woo Sik Yoo (WaferMasters, Inc.) SDM2010-198
Recrystallization of low-energy implanted ultra-shallow junctions (USJs) are characterized by photoluminescence (PL) and... [more] SDM2010-198
pp.73-78
ED, SDM 2010-07-02
10:50
Tokyo Tokyo Inst. of Tech. Ookayama Campus Characterization of deep electron levels of AlGaN grown by MOVPE
Kimihito Ooyama (Hokkaido Univ./SMM), Katsuya Sugawara (Hokkaido Univ.), Hiroyuki Taketomi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Tamotsu Hashizume (Hokkaido Univ./JST) ED2010-107 SDM2010-108
Deep electronic levels of Al_xGa_{1-x}N (0.25 <x < 0.60) were investigated by using deep level transient spectroscopy (D... [more] ED2010-107 SDM2010-108
pp.249-252
SDM 2009-06-19
13:40
Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Improvement of electrical characteristics of HfO2/Ge MIS structure treated by fluorine gas and nitrogen radical
Hideto Imajo, Hyun Lee, Dong-Hun Lee, Yuichi Yoshioka, Takeshi Kanashima, Masanori Okuyama (Osaka Univ.) SDM2009-34
The electrical properties and interface states have been improved by fluorine treatment on Ge, but there was a problem w... [more] SDM2009-34
pp.45-50
SDM 2008-12-05
16:10
Kyoto Kyoto University, Katsura Campus, A1-001 Electrical characterization of HfO2/Ge MIS structure treated by fluorine gas
Hideto Imajo, Hyun Lee, Yuichi Yoshioka, Takeshi Kanashima, Masanori Okuyama (Osaka Univ.) SDM2008-195
High-k/Ge MIS is expected as gate structure of the next-generation FET which has high mobility. However, electrical perf... [more] SDM2008-195
pp.59-64
CPM, ED, SDM 2008-05-16
15:30
Aichi Nagoya Institute of Technology Characterization of deep levels in undoped 6H-SiC by Current Deep-Level Transient Spectroscopy method
Kosuke Kito, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech) ED2008-21 CPM2008-29 SDM2008-41
We characterized deep levels that influence a semi-insulating property by current-voltage, capacitance-voltage and curre... [more] ED2008-21 CPM2008-29 SDM2008-41
pp.101-106
CPM, ED, LQE 2007-10-12
13:50
Fukui Fukui Univ. Electrical characterization of homoepitaxially-grown pn GaN diodes
Yutaka Tokuda, Youichi Matsuoka, Takeshi Seo (Aichi Inst. Tech.), Hiroyuki Ueda, Osamu Ishiguro, Narumasa Soejima, Tetsu Kachi (Toyota Central R&D Labs. Inc.) ED2007-173 CPM2007-99 LQE2007-74
We report the electrical characterization of homoepitaxially-grown pn GaN by MOCVD on free-standing GaN substrates. The... [more] ED2007-173 CPM2007-99 LQE2007-74
pp.85-88
ED, SDM 2007-06-25
15:30
Overseas Commodore Hotel Gyeongju Chosun, Gyeongju, Korea Characterization of plasma etching effects on p-type GaN by capacitance measurements of Schottky diodes
Masashi Kato, Kazuki Mikamo, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs.)
Gallium Nitride (GaN) is a promising semiconductor material for high-power devices. For realization of the high-power de... [more]
SDM, ED, CPM 2007-05-25
11:20
Shizuoka Shizuoka Univ. Characterization of plasma etching effects on GaN by electrical measurements of Schottky diodes
Masashi Kato, Kazuki Mikamo, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs. Inc.)
Gallium Nitride (GaN) is a promising semiconductor material for high-power devices. For realization of the high-power de... [more]
 Results 1 - 17 of 17  /   
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