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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, ICD, ITE-IST [detail] | 2023-08-01 16:10 |
Hokkaido | Hokkaido Univ. Multimedia Education Bldg. 3F (Primary: On-site, Secondary: Online) |
Additional High-Pressure Hydrogen Annealing Improves the Cryogenic Operation of Si (110)-oriented n-MOSFETs Shunsuke Shitakata (Keio Univ./AIST), Hiroshi Oka, Takumi Inaba, Shota Iizuka, Kimihiko Kato, Takahiro Mori (AIST)  SDM2023-41 ICD2023-20 |
Cryo-CMOS technology is highly demanded to realize control circuits of large-scale quantum computers, which control and ... [more] | SDM2023-41 ICD2023-20 pp.28-31 |
| ICD, SDM, ITE-IST [detail] | 2022-08-08 16:10 |
Online | A cryogenic digital-to-analog converter for high-fidelity control of large-scale qubit arrays Ryozo Takahashi, Takuji Miki, Makoto Nagata (Kobe Univ.) SDM2022-42 ICD2022-10 |
This work presents a cryogenic digital-to-analog converter (DAC) for controlling a qubits in a large-scale quantum compu... [more] | SDM2022-42 ICD2022-10 pp.37-40 |
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| ED, THz | 2017-12-19 09:40 |
Miyagi | RIEC, Tohoku Univ | Cryogenic DC and RF Characteristics of InGaAs/InAs/InGaAs Composite Channel HEMTs Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (NICT/Fujitsu Labs.) ED2017-82 |
We fabricated In0.7Ga0.3As/InAs/In0.7Ga0.3As and In0.7Ga0.3As channel HEMTs and measured their DC and RF characteristics... [more] | ED2017-82 pp.37-40 |
| ED | 2016-12-19 14:40 |
Miyagi | RIEC, Tohoku Univ | Effect of Drain-Side Recess Length on DC and RF Characteristics of Cryogenic InP HEMTs Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT) ED2016-81 |
We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs with various drain... [more] | ED2016-81 pp.7-12 |
| ED | 2015-12-21 13:45 |
Miyagi | RIEC, Tohoku Univ | Effect of Temperature on DC and RF Characteristics of Cryogenic InP HEMTs Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT) ED2015-92 |
We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs at 300, 220, 150, ... [more] | ED2015-92 pp.7-11 |
| SANE | 2013-12-02 15:30 |
Overseas | VAST/VNSC(2nd Dec.) & Melia Hotel (3rd Dec), Hanoi, Vietnam | Cryogenic CMOS analog switch for far-infrared image sensors Koichi Nagase (SOKENDAI), Takehiko Wada, Hirokazu Ikeda (JAXA), Yasuo Arai (KEK), Morifumi Ohno (AIST) SANE2013-89 |
We are developing far-infrared image sensors for astronomical observations. In far-infrared observations, detectors and ... [more] | SANE2013-89 pp.105-108 |
| OPE, OFT | 2010-02-26 16:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Experimental Investigation of Optical Fiber Temperature Sensors at Cryogenic Temperatures and in High-magnetic Fields Yoshichika Tanaka, Masafumi Ogata, Ken Nagashima (RTRI), Shoji Adachi, Satoshi Matsuura, Yoshihiro Kumagai (Yokogawa Electric Corp.) OFT2009-91 OPE2009-232 |
The optical fibers have the characteristics of small heat invasion, high electric insulation, electromagnetic noiseproof... [more] | OFT2009-91 OPE2009-232 pp.43-48 |
| MW (Workshop) |
2009-08-20 - 2009-08-21 |
Overseas | KMUTNB, Bangkok, Thailand | DC I-V characteristics of cryogenically-cooled GaN HEMT amplifier employing blue-light illumination Yasunori Suzuki, Shoichi Narahashi (DOCOMO), Toshio Nojima (Hokudai) |
This paper experimentally investigates a 2-GHz band cryogenically-cooled gallium nitride high electron mobility transist... [more] | |
| MW, ED | 2009-01-16 09:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Effect of Temperature on Cryogenic DC and RF Characteristics of AlGaN/GaN MIS-HEMTs Akira Endoh, Issei Watanabe, Yoshimi Yamashita (National Inst. of Info and Com Tech.), Takashi Mimura (National Inst. of Info and Com Tech/Fujitsu Lab Ltd.,), Toshiaki Matsui (National Inst. of Info and Com Tech.) ED2008-219 MW2008-184 |
We fabricated AlGaN/GaN MIS-HEMTs (metal-insulator-semiconductor high electron mobility transistors) with SiN/SiO2/SiN t... [more] | ED2008-219 MW2008-184 pp.119-123 |
| ED | 2008-12-19 15:05 |
Miyagi | Tohoku Univ. | Ultrahigh-Speed Operations of InAlAs/In0.7Ga0.3As HEMTs under Cryogenic Conditions Akira Endoh, Issei Watanabe (NICT), Keisuke Shinohara (NICT/HRL Labs.), Takashi Mimura (Fujitsu Labs.), Toshiaki Matsui (NICT) ED2008-187 |
DC and RF characteristics at 300 and 16 K of In0.52Al0.48As/In0.7Ga0.3As HEMTs were measured in the gate length Lg range... [more] | ED2008-187 pp.15-20 |
| ED | 2007-11-27 14:45 |
Miyagi | Tohoku Univ. Research Institute of Electrical Communication | Cryogenic Characteristics of Sub-100-nm-Gate AlGaN/GaN MIS-HEMTs Akira Endoh, Issei Watanabe (NICT), Yoshimi Yamashita (Fujitsu Lab.), Takashi Mimura, Toshiaki Matsui (NICT) ED2007-190 |
We fabricated sub-100-nm-gate AlGaN/GaN metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMTs) t... [more] | ED2007-190 pp.17-21 |
| SCE | 2007-10-17 13:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Infrared filter for superconducting tunnel junction array particle detector Shigetomo Shiki, Masahiro Ukibe, Yutaka Shimizugawa (AIST), Shigeo Tomita, Yuki Sato (Univ. Tsukuba), Ryutaro Maeda, Masataka Ohkubo (AIST) |
For application of superconducting detectors to mass spectrometry, through holes are required between an ion source at... [more] |
SCE2007-20 pp.13-16 |
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