Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, MW |
2024-01-25 14:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
Optimization of GaN MOCVD growth conditions using simulation Naoki Yoshioka, Susumu Hatakenaka, Ryohei Nonoda, Yoshiki Kojima (Mitsubishi Elec. Corp.) ED2023-66 MW2023-158 |
(To be available after the conference date) [more] |
ED2023-66 MW2023-158 pp.4-6 |
LQE, ED, CPM |
2023-11-30 13:30 |
Shizuoka |
|
Fabrication of GaN HBTs using a quaternary AlGaInN emitter and a GaInN base Masaya Takimoto, Akira Mase, Kojima tomoki, Egawa Takashi, Miyoshi Makoto (Nagoya Inst.Tech.) ED2023-15 CPM2023-57 LQE2023-55 |
Heterojunction bipolar transistors (HBTs) using GaN-based semiconductors are considered to be promising next-generation ... [more] |
ED2023-15 CPM2023-57 LQE2023-55 pp.6-10 |
LQE, ED, CPM |
2023-11-30 17:10 |
Shizuoka |
|
Device characteristics of GaInN-based photovoltaic cells fabricated on Free-Standing GaN substrate for optical wireless power transmission system Takahiro Fujiawa, Nan Hu, Tomoki Kojima, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. Tech.) ED2023-23 CPM2023-65 LQE2023-63 |
GaInN-based photovoltaic (PV) devices are highly promising for application to optical wireless power transmission (OWPT)... [more] |
ED2023-23 CPM2023-65 LQE2023-63 pp.44-47 |
ITE-IDY, IEIJ-SSL, EID, SID-JC, IEE-EDD [detail] |
2023-01-27 15:15 |
Online |
Online (Zoom) |
The effect of annealing on nanoparticle-dispersed (Zn,Mg)O thin films fabricated by mist CVD Kyosuke Tanaka, Toshihiro Nara, Tsukasa Yagasaki, Riki Ito, Tetsuya Kouno, Hiroko Kominami, Kazuhiko Hara (Shizuoka Univ.) EID2022-7 |
ZnO nanoparticles dispersed (Zn,Mg)O thin films, were grown on an a-plane sapphire substrate by a mist CVD method using ... [more] |
EID2022-7 pp.13-16 |
ITE-IDY, IEIJ-SSL, EID, SID-JC, IEE-EDD [detail] |
2023-01-27 15:25 |
Online |
Online (Zoom) |
Low - pressure CVD of hexagonal BN thin films at high temperatures Taiki Oishi, Taira Watanabe, Yuki Tanaka, Katsumi Masuda, Riku Yoshioka, Kirari Masuda, Hiroko Kominami, Kazuhiko Hara (Shizuoka Univ.) EID2022-8 |
To further improve quality of hexagonal boron nitride (h-BN) thin films grown on c-plane sapphire by a low - pressure ch... [more] |
EID2022-8 pp.17-20 |
CPM, ED, LQE |
2022-11-24 10:45 |
Aichi |
Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
CVD growth of 2D layered material g-C3N4/SnS2/graphene heterojunction Youhei Mori, Kota Matsuoka, Baskar Malathi, Atsushi Nakamura (Shizuoka Univ) ED2022-26 CPM2022-51 LQE2022-59 |
Artificial photosynthesis is a technology that uses sunlight to convert water and carbon dioxide into valuable solar
f... [more] |
ED2022-26 CPM2022-51 LQE2022-59 pp.11-16 |
CPM, ED, LQE |
2022-11-24 15:15 |
Aichi |
Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Study on p-GaInN base layer and quaternary AlGaInN emitter layer for GaN HBTs Yusuke Iida, Akira Mase, Masaya Takimoto, Yutaka Nikai, Takashi Egawa, Makoto Miyoshi (NITech) ED2022-36 CPM2022-61 LQE2022-69 |
GaN-based HBTs are very promising as next-generation high-frequency power devices. However, when considering the realiza... [more] |
ED2022-36 CPM2022-61 LQE2022-69 pp.57-60 |
CPM, ED, LQE |
2022-11-25 11:25 |
Aichi |
Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Growth temperature dependence of semipolar {11-22} AlInN/GaInN Takahiro Fujisawa, Taiki Nakabayashi, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. Tech.), Tetsuya Takeuchi (Meijo Univ.), Narihito Okada, Kazuyuki Tadatomo (Yamaguchi Univ.) ED2022-42 CPM2022-67 LQE2022-75 |
AlInN alloys are promising materials for GaN-based electronic and optical devices. In this study, AlInN layers with a th... [more] |
ED2022-42 CPM2022-67 LQE2022-75 pp.81-84 |
ED, CPM, LQE |
2021-11-25 16:55 |
Online |
Online |
Evaluation of PV performance of GaInN besed photovoltaic cells under monochromatic light illumination for optical wireless power transmission system Taiki Nakabayashi, Kousuke Yamamoto, Pradip Dalapati, Takashi Egawa, Makoto Miyoshi (NIT) ED2021-27 CPM2021-61 LQE2021-39 |
GaInN-based photovoltaic (PV) devices are highly promising for application to optical wireless power transmission (OWPT)... [more] |
ED2021-27 CPM2021-61 LQE2021-39 pp.59-62 |
CPM |
2021-10-27 14:00 |
Online |
Online |
Chemical vapor deposition of layered carbon nitride film Noriyuki Urakami, Kenshuke Takashima, Yoshio Hashimoto (Shinshu Univ.) CPM2021-28 |
Graphitic carbon nitride (g-C3N4) exhibits semiconducting properties and is a promising candidate for use as a metal- fr... [more] |
CPM2021-28 pp.31-35 |
LQE, CPM, ED |
2020-11-26 11:15 |
Online |
Online |
Study on p/n conductivity control of epitaxial AlInN films Taiki Nakabayashi, Haruka Takada, Takashi Egawa, Makoto Miyoshi (NIT), Tetsuya Takeuchi (Meijo Univ.) ED2020-4 CPM2020-25 LQE2020-55 |
In this study, we attempted the p/n conductivity control of epitaxial AlInN films grown by metalorganic chemical vapor d... [more] |
ED2020-4 CPM2020-25 LQE2020-55 pp.13-16 |
LQE, CPM, ED |
2020-11-26 11:35 |
Online |
Online |
Examination of GaN-based photodetectors for optical wireless power transmission system Kosuke Yamamoto, Pradip Dalapati, Takashi Egawa, Makoto Miyoshi (NIT) ED2020-5 CPM2020-26 LQE2020-56 |
Aiming at a high-efficiency photodetectors for the optical wireless power transmission system consisting of semiconducto... [more] |
ED2020-5 CPM2020-26 LQE2020-56 pp.17-20 |
LQE, CPM, ED |
2020-11-26 15:50 |
Online |
Online |
GaN-based MIS-HEMTs with Mist Chemical Vapor Deposited Al2O3 Low Rui Shan, Itsuki Nagase, Ali Baratov, Joel Tacla Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.), Zenji Yatabe, Kenta Naito, Motoyama Tomohiro, Yusui Nakamura (Kumamoto Univ.) ED2020-13 CPM2020-34 LQE2020-64 |
We have fabricated AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) using Al2O3 ga... [more] |
ED2020-13 CPM2020-34 LQE2020-64 pp.49-52 |
EID, ITE-IDY, IEIJ-SSL, SID-JC, IEE-EDD [detail] |
2020-01-23 13:05 |
Tottori |
Tottori Univ. |
[Poster Presentation]
CVD growth of h-BN thin films on c-plane sapphire and Si (111) substrates Tomoyasu Nakama, Kazuki Matsusita, Taira Watanabe, Hiroko Kominami, Kazuhiko Hara (Shizuoka Univ.) |
The hexagonal boron nitride (h-BN) thin films were grown on c-plane sapphire and Si (111) substrates by low-pressure che... [more] |
|
EID, ITE-IDY, IEIJ-SSL, SID-JC, IEE-EDD [detail] |
2020-01-23 13:10 |
Tottori |
Tottori Univ. |
[Poster Presentation]
Mist CVD of ZnO-based nanoparticle dispersed thin films Naoki Oshiro, Shogo Onoda, Toshihiro Nara, Hiroko Kominami, Kazuhiko Hara (Shizuoka Univ.) |
As one of the nanoparticle-dispersed semiconductor films we have proposed for novel phosphor applications, ZnO-nanoparti... [more] |
|
OME |
2019-12-26 11:05 |
Okinawa |
Okinawaken Seinenkaikan |
Preparation of diamond electrodes and electrolyzed sulfuric acid technology Emi Shindou (CIT), Tatsuo Nagai (Micro Ace), Yukihiro Sakamoto (CIT) OME2019-50 |
Boron-doped diamond was synthesized with trimethyl borate B(CH3O)3 as boron source using a microwave plasma CVD apparatu... [more] |
OME2019-50 pp.9-12 |
CPM, LQE, ED |
2019-11-21 15:30 |
Shizuoka |
Shizuoka Univ. (Hamamatsu) |
Growth, crystal and optical characterization of quaternary AlGaInN epitaxial films lattice-matched to c-plane GaN Hiroki Harada, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. Tech.), Tetsuya Takeuchi (Meijo Univ.) ED2019-45 CPM2019-64 LQE2019-88 |
Quaternary AlGaInN films with thickness greater than 150 nm are grown on c-plane GaN-on-sapphire templates by metalorgan... [more] |
ED2019-45 CPM2019-64 LQE2019-88 pp.53-56 |
OCS, LQE, OPE |
2019-10-17 15:00 |
Kagoshima |
|
Characteristic analysis of SiN waveguides with different structures and fabrication methods for 1.3 μm multi-wavelength lasers Yuta Yokomura, Takuya Mitarai, Tomohiro Amemiya, Nobuhiko Nishiyama (Tokyotech) OCS2019-35 OPE2019-73 LQE2019-51 |
A new grid-free WDM system has been proposed in order to overcome the problems of conventional WDM systems that are subj... [more] |
OCS2019-35 OPE2019-73 LQE2019-51 pp.45-48 |
ED, LQE, CPM |
2018-11-30 09:00 |
Aichi |
Nagoya Inst. tech. |
A 2.5-kV-breakdown-voltage AlGaN-channel HFET with a strain-controlled AlGaInN barrier layer Daiki Hosomi, Keita Furuoka, Heng Chen, Saki Saito, Toshiharu Kubo, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. of Tech.) ED2018-41 CPM2018-75 LQE2018-95 |
Novel AlGaN-channel heterostructures employing quaternary AlGaInN barriers were grown by metalorganic chemical vapor dep... [more] |
ED2018-41 CPM2018-75 LQE2018-95 pp.41-44 |
SDM |
2018-11-09 09:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Topography Simulation of Trench-Filling Growth of 4H-SiC Kazuhiro Mochizuki, Shiyang Ji, Ryoji Kosugi, Yoshiyuki Yonezawa, Hajime Okumura (AIST) SDM2018-70 |
A topography-simulation model is proposed to simulate chemical-vapor-deposition (CVD) trench filling for 4H-SiC superjun... [more] |
SDM2018-70 pp.29-34 |