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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2023-11-10 14:40 |
Tokyo | (Primary: On-site, Secondary: Online) |
[Invited Talk]
Characterization of Physical Properties in GaN under High Electric Field
-- Impact Ionization Coefficients and Critical Electric Field -- Takuya Maeda (UTokyo)  SDM2023-72 |
The accurate device simulation and prediction of the safe operating region for power devices require precise values of m... [more] | SDM2023-72 pp.41-46 |
| ED, CPM, LQE | 2021-11-26 14:55 |
Online | Online | High-breakdown-voltage Al0.36Ga0.64N-channel HFETs with a dual AlN/AlGaInN barrier layer Akiyoshi Inoue, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi (NIT) ED2021-32 CPM2021-66 LQE2021-44 |
In this study, we fabricated and characterized heterojunction field-effect transistors (HFETs) based on an Al0.36Ga0.64N... [more] | ED2021-32 CPM2021-66 LQE2021-44 pp.79-82 |
| SDM, ICD, ITE-IST [detail] | 2021-08-18 11:00 |
Online | Online | [Invited Talk]
Demonstration of HfO2-based ferroelectric ultra-thin films with low operating voltage, low process temperature, and high endurance
-- Toward embedded memory in advanced technology nodes -- Kasidit Toprasertpong, Kento Tahara (Univ. Tokyo), Yukinobu Hikosaka, Ko Nakamura, Hitoshi Saito (Fujitsu Semiconductor Memory Solution), Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2021-38 ICD2021-9 |
In this study, we demonstrate the importance of the thickness scaling of Hf0.5Zr0.5O2 thin films for the ferroelectric m... [more] | SDM2021-38 ICD2021-9 pp.42-47 |
| EMD, R | 2021-02-12 15:00 |
Online | Online | [Invited Talk]
Reliability physics issues for electronic devices
-- Failure mechanisms that still need to be physically clarified -- Yasushi Kadota (RICOH Co.,Ltd.) R2020-37 EMD2020-28 |
Many kind of electronic devices, including semiconductor devices, have been using in various fields and applications in ... [more] | R2020-37 EMD2020-28 pp.19-24 |
| LQE, CPM, ED | 2020-11-26 15:30 |
Online | Online | Enhanced Breakdown Voltage in AlGaN/GaN HEMTs by Oxygen Plasma Treatment Shunsuke Kamiya, Takashi Nishitani, Yu Matsuda, Nozomu Takano, Joel T. Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.) ED2020-12 CPM2020-33 LQE2020-63 |
With its high critical electric field as consequence of its wide bandgap, gallium nitride (GaN) is considered a leading ... [more] | ED2020-12 CPM2020-33 LQE2020-63 pp.45-48 |
| SSS | 2019-09-24 13:00 |
Tokyo | Analysis of dielectric breakdown characteristics for additive manufacturing materials made by selective laser sintering Hiroaki Arai, Yuki Yamauchi, Takeshi Ueno (TIRI) SSS2019-17 |
Additive Manufacturing (3D printer) can easily design and make parts with complex shapes. Because of that, it is used in... [more] | SSS2019-17 pp.1-4 |
|
| SDM | 2018-06-25 16:15 |
Aichi | Nagoya Univ. VBL3F | Concern of Ferroelectric HfO2 Films Brought by Large Coercive Field Shinji Migita, Hiroyuki Ota (AIST), Akira Toriumi (Univ. Tokyo) SDM2018-25 |
Ferroelectric HfO2-based thin films are attractive memory materials for application in LSI. These ferroelectrics have la... [more] | SDM2018-25 pp.43-46 |
| CPM, LQE, ED | 2016-12-12 16:10 |
Kyoto | Kyoto University | AlGaN/GaN HEMTs with High Breakdown Voltage and High Drain Current Yudai Suzuki, Taisei Yamazaki, Shinya Makino, Joel T. Asubar, Hirokuni Tokuda, Masaaki Kuzuhara (Univ.Fukui) ED2016-64 CPM2016-97 LQE2016-80 |
We have studied the characteristics of off-state breakdown voltage and on-state resistance of large gate-periphery AlGaN... [more] | ED2016-64 CPM2016-97 LQE2016-80 pp.35-39 |
| MW, ED | 2013-01-18 13:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Analysis of Lag Phenomena, Current Collapse and Breakdown Characteristics in Source-Field-Plate AlGaN/GaN HEMTs Hideyuki Hanawa, Hiraku Onodera, Kazushige Horio (Shibaura Inst. Tech.) ED2012-123 MW2012-153 |
Two-dimensional analysis of lag phenomena, current collapse and breakdown voltages in source-field-plate AlGaN/GaN HEMTs... [more] | ED2012-123 MW2012-153 pp.57-62 |
| ED, MW | 2012-01-12 12:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Analusis of Buffer-Impurity and Field-Plate Effects on Breakdown Performance in Small-Sized AlGaN/GaN HEMTs Hiraku Onodera, Atsushi Nakajima, Kazushige Horio (Shibaura Inst. Tech.) ED2011-133 MW2011-156 |
In this work, we perform two-dimensional analysis of breakdown characteristics in field-plate AlGaN/GaN HEMTs with a sho... [more] | ED2011-133 MW2011-156 pp.81-85 |
| MW, ED | 2011-01-14 10:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Boosting of Blocking Voltages in GaN Transistors by Widening Depletion Layer in Si Substrate Hidekazu Umeda, Asamira Suzuki, Yoshiharu Anda, Masahiro Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic Co.) ED2010-184 MW2010-144 |
We propose a novel structure to boost the breakdown voltages of AlGaN/GaN hetero junction field effect transistors (HFET... [more] | ED2010-184 MW2010-144 pp.51-54 |
| EMCJ (2nd) |
2010-05-28 14:00 |
Miyagi | Cyberscience Center, Tohoku University | Measurement of the radiated electromagnetic filed intensity using spherical electrodes and a horn antenna Ken Kawamata (Hachinohe Inst. of Tech.), Shigeki Minegishi (Tohoku Gakuin Univ.), Osamu Fujiwara (NIT) |
The micro-gap discharge as the low voltage ESD shows very fast transition duration of about 32 ps or less. Besides, brea... [more] | |
| SDM | 2010-02-05 16:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Evaluation of Line-Edge Roughness in Cu/Low-k Interconnect Patterns Atsuko Yamaguchi, D. Ryuzaki, Kenichi Takeda (Hitachi), Hiroki Kawada (Hitachi High-Tech.) SDM2009-192 |
To establish the method for evaluating Cu/low-k interconnect line-edge roughness (LER), resist, low-k, and Cu/low-k samp... [more] | SDM2009-192 pp.59-63 |
| EMCJ, IEE-EMC | 2009-12-18 14:15 |
Gifu | NIFS | Study on Radiated Electromagnetic Field Intensity due to Micro Gap Discharge as the low voltage ESD. Ken Kawamata (Hachinohe Inst. of Tech.), Shigeki Minegishi (Tohoku Gakuin Univ.), Osamu Fujiwara (Nagoya Inst. of Tech.) |
The breakdown field strength and radiated electromagnetic field intensity due to micro gap discharge were examined in ex... [more] | EMCJ2009-95 pp.59-64 |
| AP | 2009-09-04 14:50 |
Aomori | Hachinohe Inst. of Tech. | Experimental Study of Radiated Electromagnetic Field Intensity due to Micro Gap Discharge Ken Kawamata (Hachinohe Inst. of Tech.), Shigeki Minegishi (Tohoku Gakuin Univ.), Osamu Fujiwara (Nagoya Inst. of Tech.) AP2009-100 |
The breakdown field strength and radiated electromagnetic field intensity due to micro gap discharge were examined in ex... [more] | AP2009-100 pp.121-124 |
| EMD, EMCJ | 2009-05-22 14:15 |
Tokyo | Kanda camupus, Nippon Institute of Technology | Relation Between Radiated Electromagnetic Field Intensity and Electrode Condition due to Micro Gap Discharge Ken Kawamata (Hachinohe Inst. of Tech.), Shigeki Minegishi (Tohoku Gakuin Univ.), Osamu Fujiwara (Nagoya Inst. of Tech.) EMCJ2009-17 EMD2009-9 |
he relationship between breakdown field strength and radiated electromagnetic field intensity was examined in experiment... [more] | EMCJ2009-17 EMD2009-9 pp.45-48 |
| LQE, ED, CPM | 2008-11-28 11:15 |
Aichi | Nagoya Institute of Technology | Optimum Design of AlGaN/GaN HEMTs with Field Plate Ryosuke Sakai, Tomotaka Okai, Kenji Shiojima, Masaaki Kuzuhara (Univ. of Fukui) ED2008-174 CPM2008-123 LQE2008-118 |
We have analyzed the electric field distribution for AlGaN/GaN HEMTs with various types of graded field plates using an ... [more] | ED2008-174 CPM2008-123 LQE2008-118 pp.109-114 |
| EMCJ, EMD | 2008-07-18 14:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Experimental Study on Radiated Electromagnetic Field Strength due to Micro Gap Discharge Below 1kV Ken Kawamata (Hachinohe Inst. of Tech.), Shigeki Minegishi, Akira Haga (Tohoku Gakuin Univ.), Osamu Fujiwara (NIT) EMCJ2008-45 EMD2008-27 |
Abstract Relationship between breakdown field strength and radiated electromagnetic field strength was examined in expe... [more] | EMCJ2008-45 EMD2008-27 pp.27-30 |
| SDM, ED | 2008-07-09 11:40 |
Hokkaido | Kaderu２・７ | [Invited Talk]
AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer Tadayoshi Deguchi (New Japan Radio), Takashi Egawa (Nagoya Inst. of Tech.) ED2008-41 SDM2008-60 |
We review our studies on AlGaN/GaN-based electron devices with a low-temperature GaN (LT-GaN) cap layer, such as heteros... [more] | ED2008-41 SDM2008-60 pp.9-14 |
| SDM, ED | 2008-07-11 10:50 |
Hokkaido | Kaderu２・７ | High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN Passivation Daisuke Shibata, Hisayoshi Matsuo (Matsushita Electric Industrial), Shuichi Nagai, Ming Li (Panasonic Boston Lab), Naohiro Tsurumi, Hidetoshi Ishida, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric Industrial) ED2008-73 SDM2008-92 |
We report ultra high blocking voltage AlGaN/GaN heterojunction transistors (HFETs) using thick poly-crystalline AlN (pol... [more] | ED2008-73 SDM2008-92 pp.177-181 |
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