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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2023-11-10 14:40 |
Tokyo | (Primary: On-site, Secondary: Online) |
[Invited Talk]
Characterization of Physical Properties in GaN under High Electric Field
-- Impact Ionization Coefficients and Critical Electric Field -- Takuya Maeda (UTokyo)  SDM2023-72 |
The accurate device simulation and prediction of the safe operating region for power devices require precise values of m... [more] | SDM2023-72 pp.41-46 |
| HWS | 2023-04-15 10:45 |
Oita | (Primary: On-site, Secondary: Online) |
PUF Based on Fetal-Movement Circuit Kotaro Naruse, Takayuki Ueda, Jun Shiomi, Yoshihiro Midoh, Noriyuki Miura (Osaka Univ.) HWS2023-12 |
As a yet unexploited high-energy source for powering ICs, this paper focused on high-energy plasma in a semiconductor f... [more] | HWS2023-12 pp.49-50 |
| CNR, BioX | 2023-03-01 10:00 |
Oita | (Primary: On-site, Secondary: Online) |
Design and Implementation of a Dialogue Breakdown Avoidance Method Using Excuses in a Chat Dialogue System Ryusei Ogasawara, Yuki Furuya, Kazunori Takashio (Keio Univ.) BioX2022-63 CNR2022-29 |
In order to achieve natural dialogue with a dialogue system, it is necessary to resolve dialogue breakdowns. However, wh... [more] | BioX2022-63 CNR2022-29 pp.7-12 |
| ED, CPM, LQE | 2021-11-26 14:55 |
Online | Online | High-breakdown-voltage Al0.36Ga0.64N-channel HFETs with a dual AlN/AlGaInN barrier layer Akiyoshi Inoue, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi (NIT) ED2021-32 CPM2021-66 LQE2021-44 |
In this study, we fabricated and characterized heterojunction field-effect transistors (HFETs) based on an Al0.36Ga0.64N... [more] | ED2021-32 CPM2021-66 LQE2021-44 pp.79-82 |
| SDM, ICD, ITE-IST [detail] | 2021-08-18 11:00 |
Online | Online | [Invited Talk]
Demonstration of HfO2-based ferroelectric ultra-thin films with low operating voltage, low process temperature, and high endurance
-- Toward embedded memory in advanced technology nodes -- Kasidit Toprasertpong, Kento Tahara (Univ. Tokyo), Yukinobu Hikosaka, Ko Nakamura, Hitoshi Saito (Fujitsu Semiconductor Memory Solution), Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2021-38 ICD2021-9 |
In this study, we demonstrate the importance of the thickness scaling of Hf0.5Zr0.5O2 thin films for the ferroelectric m... [more] | SDM2021-38 ICD2021-9 pp.42-47 |
| EMD, R | 2021-02-12 15:00 |
Online | Online | [Invited Talk]
Reliability physics issues for electronic devices
-- Failure mechanisms that still need to be physically clarified -- Yasushi Kadota (RICOH Co.,Ltd.) R2020-37 EMD2020-28 |
Many kind of electronic devices, including semiconductor devices, have been using in various fields and applications in ... [more] | R2020-37 EMD2020-28 pp.19-24 |
| LQE, CPM, ED | 2020-11-26 13:30 |
Online | Online | High-breakdown-voltage AlGaN channel HFETs with selective-area regrowth ohmic contacts Akiyoshi Inoue, Hiroki Harada, Mizuki Yamanaka, Takashi Egawa, Makoto Miyoshi (NIT) ED2020-7 CPM2020-28 LQE2020-58 |
Al0.19Ga0.81N-channel metal-insulator-semiconductor (MIS) HFETs employing a quaternary AlGaInN barrier layer and a selec... [more] | ED2020-7 CPM2020-28 LQE2020-58 pp.25-28 |
| LQE, CPM, ED | 2020-11-26 15:30 |
Online | Online | Enhanced Breakdown Voltage in AlGaN/GaN HEMTs by Oxygen Plasma Treatment Shunsuke Kamiya, Takashi Nishitani, Yu Matsuda, Nozomu Takano, Joel T. Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.) ED2020-12 CPM2020-33 LQE2020-63 |
With its high critical electric field as consequence of its wide bandgap, gallium nitride (GaN) is considered a leading ... [more] | ED2020-12 CPM2020-33 LQE2020-63 pp.45-48 |
| SDM | 2020-10-22 10:50 |
Online | Online | High capacitance density high breakdown voltage textured deep trench SiN capacitors toward 3D integration Koga Saito, Ayano Yoshida, Rihito Kuroda (Tohoku Univ.), Hiroshi Shibata, Taku Shibaguchi, Naoya kuriyama (LAPIS Semiconductor Miyagi), Shigetoshi Sugawa (Tohoku Univ.) SDM2020-15 |
High capacitance density and High breakdown voltage textured deep trench SiN capacitors are presented. The developed cap... [more] | SDM2020-15 pp.7-11 |
| SSS | 2019-09-24 13:00 |
Tokyo | Analysis of dielectric breakdown characteristics for additive manufacturing materials made by selective laser sintering Hiroaki Arai, Yuki Yamauchi, Takeshi Ueno (TIRI) SSS2019-17 |
Additive Manufacturing (3D printer) can easily design and make parts with complex shapes. Because of that, it is used in... [more] | SSS2019-17 pp.1-4 |
|
| LQE, OPE, CPM, EMD, R | 2019-08-22 16:00 |
Miyagi | [Invited Talk]
Reconsideration of TDDB Statistics of Thick Dielectric Films Used in SiC/GaN Power/RF Devices and Image Sensors Kenji Okada (TowerJazz Panasonic Semiconductor) R2019-25 EMD2019-23 CPM2019-24 OPE2019-52 LQE2019-30 |
Recent advances of GaN/SiC power devices, RF/MMIC (monolithic microwave integrated circuit) devices, and also Image Sens... [more] | R2019-25 EMD2019-23 CPM2019-24 OPE2019-52 LQE2019-30 pp.29-34 |
|
| AI | 2019-07-22 14:00 |
Hokkaido | Predicting Issue Weights and Detecting Breakdowns in Negotiation Dialogue Atsuki Yamaguchi (TUAT), Kosui Iwasa (DeNA), Katsuhide Fujita (TUAT) AI2019-9 |
In this paper, we tackle on two tasks in the research of negotiation dialogue: 1) estimation of issue weights and detec... [more] | AI2019-9 pp.45-50 |
|
| WPT, MW | 2019-04-22 16:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Simulated limitations of rectification efficiency on bridge rectifiers in 5.8GHz band Kenji Itoh, Hiroki Kishimoto (KIT) WPT2019-9 MW2019-9 |
In wireless power transmission systems, improvements on efficiency and power level of rectifiers are required for wider ... [more] | WPT2019-9 MW2019-9 pp.45-50 |
| SDM | 2018-06-25 16:15 |
Aichi | Nagoya Univ. VBL3F | Concern of Ferroelectric HfO2 Films Brought by Large Coercive Field Shinji Migita, Hiroyuki Ota (AIST), Akira Toriumi (Univ. Tokyo) SDM2018-25 |
Ferroelectric HfO2-based thin films are attractive memory materials for application in LSI. These ferroelectrics have la... [more] | SDM2018-25 pp.43-46 |
| WPT (2nd) |
2017-12-09 - 2017-12-11 |
Overseas | National University of Singapore(AWPT2017) | Novel Extended Non-Breakdown Rectifier Topologies for Power-Optimized Waveform based Wireless Power Transfer Systems Hao Zhang (NUST), Zheng Zhong, Yong-Xin Guo (NUS), Wen Wu (NUST) |
This paper presents two novel extended non-breakdown rectifier topologies, which practically solve the rectifier?s early... [more] | |
| LQE, CPM, ED | 2017-12-01 12:30 |
Aichi | Nagoya Inst. tech. | Characterization of Chemical Structure and Electrical Properties of Remote O2 Plasma Enhanced CVD SiO2/GaN(0001) structures NguyenXuan Truyen (Nagoya Univ.), Noriyuki Taoka (AIST GaN OIL), Akio Ohta (Nagoya Univ.), Hisashi Yamada, Tokio Takahashi (AIST GaN OIL), Mitsuhisa Ikeda, Katsunori Makihara (Nagoya Univ.), Mitsuaki Shimizu (AIST GaN OIL), Seiichi Miyazaki (Nagoya Univ.) ED2017-61 CPM2017-104 LQE2017-74 |
Impacts of post-deposition annealing (PDA) on interface properties in a SiO2/GaN structure formed by a remote oxygen pla... [more] | ED2017-61 CPM2017-104 LQE2017-74 pp.61-64 |
| SDM | 2017-11-09 13:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Simple and efficient approach to improve hot carrier immunity of a p-LDMOSFET Atsushi Sakai, Katsumi Eikyu (REL), Fujii Hiroki, Takahiro Mori (RSMC), Yutaka Akiyama, Yasuo Yamaguchi (REL) SDM2017-63 |
This paper proposes a simple and efficient method to improve hot carrier (HC) immunity of p-channel LDMOSFET without deg... [more] | SDM2017-63 pp.11-14 |
| CPM, LQE, ED | 2016-12-12 16:10 |
Kyoto | Kyoto University | AlGaN/GaN HEMTs with High Breakdown Voltage and High Drain Current Yudai Suzuki, Taisei Yamazaki, Shinya Makino, Joel T. Asubar, Hirokuni Tokuda, Masaaki Kuzuhara (Univ.Fukui) ED2016-64 CPM2016-97 LQE2016-80 |
We have studied the characteristics of off-state breakdown voltage and on-state resistance of large gate-periphery AlGaN... [more] | ED2016-64 CPM2016-97 LQE2016-80 pp.35-39 |
| HCGSYMPO (2nd) |
2016-12-07 - 2016-12-09 |
Kochi | Kochi City Culture Plaza (CUL-PORT) | Extraction of Oral Explanation Scenes by use model of Interactive contents Nobuhiko Hama, Kenta Amahaya, Keiya Sugihara, Noboru Nakamiti (Fukuyama Univ.), Keita Watanabe (DNP Information Systems), Shouta Morita (Fukuyama Univ.) |
Sometimes, explainer have to explain by oral under case of using interactive contents. We considered that oral explanati... [more] | |
| SDM | 2016-06-29 13:30 |
Tokyo | Campus Innovation Center Tokyo | A resistive switching device based on breakdown and local anodic oxidation Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Tech.) SDM2016-38 |
We propose a resistive switching device with CeOx and SiO2 stacked layers on a Si substrate. Breakdown spots are created... [more] | SDM2016-38 pp.33-36 |
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