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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2015-01-27 15:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Accurate Prediction of PBTI Lifetime in N-type Fin-Channel High-k Tunnel FETs Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda, Yongxun Liu, Takashi Matsukawa, Yuki Ishikawa, Kazuhiko Endo, Shinichi Ohuchi, Junichi Tsukada, Hiromi Yamauchi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Meishoku Masahara (AIST)  SDM2014-143 |
The positive bias temperature instability (PBTI) characteristics for n-type fin-channel tunnel FETs (TFETs) with high-k ... [more] | SDM2014-143 pp.33-36 |
| SDM | 2014-01-29 10:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Heated Ion Implantation Technology for Highly Reliable Metal-gate/High-k CMOS SOI FinFETs Wataru Mizubayashi (AIST), Hiroshi Onoda, Yoshiki Nakashima (Nissin Ion Equipment), Yuki Ishikawa, Takashi Matsukawa, Kazuhiko Endo, Yongxun Liu, Shinichi Ouchi, Junichi Tsukada, Hiromi Yamauchi, Shinji Migita, Yukinori Morita, Hiroyuki Ota, Meishoku Masahara (AIST) SDM2013-138 |
The impact of heated ion implantation (I/I) technology on metal-gate (MG)/high-k (HK) CMOS SOI FinFET performance and re... [more] | SDM2013-138 pp.13-16 |
| IPSJ-SLDM, CPSY, RECONF, VLD [detail] | 2014-01-29 14:50 |
Kanagawa | Hiyoshi Campus, Keio University | Prediction Model for Process Variation and BTI-Induced Degradation by Measurement Data on FPGA Michitarou Yabuuchi, Kazutoshi Kobayashi (Kyoto Inst. of Tech.) VLD2013-129 CPSY2013-100 RECONF2013-83 |
We propose a prediction model for BTI-induced degradation by measurement data on 65nm-process FPGAs. BTI-induced degrad... [more] |
VLD2013-129 CPSY2013-100 RECONF2013-83 pp.161-166 |
| IMQ (2nd) |
2011-03-18 14:30 |
Shizuoka | The temporal change of the vergence characteristic while watching 3D movies Yusuke Horie, Daisuke Fushimi, Yuta Kawamura, Mitsuho Yamada (Tokai Univ.) |
The number which is made public as 3D movie increases and 3D compatible TVs are commercialized from a lot of manufacture... [more] | ||
| SCE | 2008-07-24 14:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg | A novel THz SIS mixer with a NbTiN-groundplane and SIS micro-trylayers directly grown on a quartz substrate Akira Endo (Univ. of Tokyo, NAOJ, JSPS Research Fellow), Takashi Noguchi, Matthias Kroug, Sergey V. Shitov (NAOJ), Shan Wenlei (PMO), Tomonori Tamura (NAOJ), Takafumi Kojima (Osaka Pref. Univ.), Yoshinori Uzawa, Takeshi Sakai (NAOJ), Hirofumi Inoue (Univ. of TokyoNAOJ), Kotaro Kohno (Univ. of Tokyo) SCE2008-17 |
A new structure and fabrication process for multi-material THz-SIS mixers is proposed. In this design, both the micromet... [more] | SCE2008-17 pp.13-18 |
| ICD, SDM | 2008-07-17 09:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Impact of the Different Nature of Interface Defect States on the NBTI and 1/f noise of High-k / Metal Gate pMOSFETs between (100) and (110) Crystal Orientations Motoyuki Sato, Yoshihiro Sugita, Takayuki Aoyama, Yasuo Nara, Yuzuru Ohji (Selete) SDM2008-128 ICD2008-38 |
Using (110) substarate is one of promissing candidate for pMOSTET boost technology. (110) surface shows not only higher ... [more] | SDM2008-128 ICD2008-38 pp.1-6 |
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