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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
QIT
(2nd)		 2023-12-17
17:30		 Okinawa OIST
(Primary: On-site, Secondary: Online)		 An Effective Countermeasure against Time-Shift Attack and Comprehensive Analyses of Decoy-State QKD under Finite-Size Effects
Toshitsugu Kato, Atsushi Okamoto, Akihisa Tomita (Hokkaido Univ.) 		One factor hindering the practical implementation of quantum cryptography is the vulnerability to eavesdropping attacks ... [more]
SDM 2023-11-10
14:40		 Tokyo
(Primary: On-site, Secondary: Online)		 [Invited Talk] Characterization of Physical Properties in GaN under High Electric Field -- Impact Ionization Coefficients and Critical Electric Field --
Takuya Maeda (UTokyo) SDM2023-72		 The accurate device simulation and prediction of the safe operating region for power devices require precise values of m... [more] SDM2023-72
pp.41-46
LQE, LSJ 2016-05-20
09:55		 Fukui   Wavelength-dependent photodetection characteristics of APDs fabricated by standard CMOS process
Koichi Iiyama, Zul Atfyi Fauzan bin Mohammed Napiah, Takuya Hishiiki (Kanazawa Univ.) LQE2016-9		 Avalanche photodiodes fabricated by standard CMOS process (CMOS-APD) have features of high avalanche gain less than 10,V... [more] LQE2016-9
pp.37-41
OPE 2013-12-20
14:00		 Tokyo Kikai-Shinko-Kaikan Bldg. Characteristics and analysis of germanium waveguide photodiode under high voltage driving
Kotaro Takeda, Tatsuro Hiraki, Tai Tsuchizawa, Hidetaka Nishi, Rai Kou, Hiroshi Fukuda, Tsuyoshi Yamamoto (NTT), Yasuhiko Ishikawa, Kazumi Wada (Univ. of Tokyo), Koji Yamada (NTT) OPE2013-140		 We demonstrate a responsivity of germanium photodiode (GePD) with a silicon waveguide in the C- and L-band under high-vo... [more] OPE2013-140
pp.13-18
 Results 1 - 4 of 4  /   
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