ken-system: - All Technical Committee Conferences

IEICE Technical Committee Submission System
Conference Schedule

Online Proceedings
[Sign in]
Tech. Rep. Archives

[Japanese] / [English]

(

Committee/Place/Topics

) --Press->

(

Paper Keywords: / Column:Title Auth. Affi. Abst. Keyword

) --Press->

All Technical Committee Conferences (Searched in: All Years)

Search Results: Conference Papers

Conference Papers (Available on Advance Programs) (Sort by: Date Descending)

Committee	Date Time	Place		Paper Title / Authors	Abstract	Paper #
LQE, CPM, ED	2020-11-26 15:50	Online	Online	GaN-based MIS-HEMTs with Mist Chemical Vapor Deposited Al2O3 Low Rui Shan, Itsuki Nagase, Ali Baratov, Joel Tacla Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.), Zenji Yatabe, Kenta Naito, Motoyama Tomohiro, Yusui Nakamura (Kumamoto Univ.) ED2020-13 CPM2020-34 LQE2020-64	We have fabricated AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) using Al2O3 ga... [more]	ED2020-13 CPM2020-34 LQE2020-64 pp.49-52
LQE, CPM, ED	2020-11-27 11:20	Online	Online	Improved performance in GaN-based HEMTs with insulated gate structures Ali Baratov, Takashi Ozawa, Shunpei Yamashita, Joel T. Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.) ED2020-16 CPM2020-37 LQE2020-67	Several groups have reported improved performance in GaN-based transistors employing metal-insulator-semiconductor (MIS)... [more]	ED2020-16 CPM2020-37 LQE2020-67 pp.60-62
ED	2010-06-17 15:15	Ishikawa	JAIST	Fabrication of high-frequency and high-power AlGaN/GaN HEMTs Yoshimi Yamashita, Issei Watanabe, Akira Endoh, Nobumitsu Hirose, Toshiaki Matsui (NICT), Takashi Mimura (NICT/Fujitsu lab.) ED2010-38	High-power AlGaN/GaN high electron mobility transistors (HEMTs) are the most promising devices for future high-speed and... [more]	ED2010-38 pp.25-30
ED, LQE, CPM	2009-11-20 15:50	Tokushima	Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan)	Output characteristics of AlGaN/GaN HEMTs at 60 GHz frequency band Issei Watanabe, Akira Endoh, Yoshimi Yamashita, Nobumitsu Hirose (NICT), Takashi Mimura (NICT/Fujitsu Labs.), Toshiaki Matsui (NICT) ED2009-159 CPM2009-133 LQE2009-138	AlGaN/GaN high electron mobility transistors (HEMTs) are the most promising devices for future high-speed and long-range... [more]	ED2009-159 CPM2009-133 LQE2009-138 pp.151-155
MW, ED	2009-01-16 09:55	Tokyo	Kikai-Shinko-Kaikan Bldg	Effect of Temperature on Cryogenic DC and RF Characteristics of AlGaN/GaN MIS-HEMTs Akira Endoh, Issei Watanabe, Yoshimi Yamashita (National Inst. of Info and Com Tech.), Takashi Mimura (National Inst. of Info and Com Tech/Fujitsu Lab Ltd.,), Toshiaki Matsui (National Inst. of Info and Com Tech.) ED2008-219 MW2008-184	We fabricated AlGaN/GaN MIS-HEMTs (metal-insulator-semiconductor high electron mobility transistors) with SiN/SiO2/SiN t... [more]	ED2008-219 MW2008-184 pp.119-123
ED	2007-11-27 14:45	Miyagi	Tohoku Univ. Research Institute of Electrical Communication	Cryogenic Characteristics of Sub-100-nm-Gate AlGaN/GaN MIS-HEMTs Akira Endoh, Issei Watanabe (NICT), Yoshimi Yamashita (Fujitsu Lab.), Takashi Mimura, Toshiaki Matsui (NICT) ED2007-190	We fabricated sub-100-nm-gate AlGaN/GaN metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMTs) t... [more]	ED2007-190 pp.17-21

Copyright and reproduction : All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

[Return to Top Page]

[Return to IEICE Web Page]

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan